JPS5368087A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5368087A
JPS5368087A JP14319476A JP14319476A JPS5368087A JP S5368087 A JPS5368087 A JP S5368087A JP 14319476 A JP14319476 A JP 14319476A JP 14319476 A JP14319476 A JP 14319476A JP S5368087 A JPS5368087 A JP S5368087A
Authority
JP
Japan
Prior art keywords
semiconductor device
andthus
well
power consumption
current injection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14319476A
Other languages
Japanese (ja)
Other versions
JPS5639546B2 (en
Inventor
Yoshiki Tanigawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14319476A priority Critical patent/JPS5368087A/en
Publication of JPS5368087A publication Critical patent/JPS5368087A/en
Publication of JPS5639546B2 publication Critical patent/JPS5639546B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]

Abstract

PURPOSE:To increase beta as well as the current injection efficiency of the lateral injector of I<2> L element, andthus to realize a small power consumption.
JP14319476A 1976-11-29 1976-11-29 Semiconductor device Granted JPS5368087A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14319476A JPS5368087A (en) 1976-11-29 1976-11-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14319476A JPS5368087A (en) 1976-11-29 1976-11-29 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5368087A true JPS5368087A (en) 1978-06-17
JPS5639546B2 JPS5639546B2 (en) 1981-09-14

Family

ID=15333045

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14319476A Granted JPS5368087A (en) 1976-11-29 1976-11-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5368087A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5844764A (en) * 1981-09-11 1983-03-15 Oki Electric Ind Co Ltd Manufacture of semiconductor integrated circuit device
JPH0471266A (en) * 1990-07-11 1992-03-05 Nec Yamagata Ltd Manufacture of semiconductor device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5157295A (en) * 1974-11-15 1976-05-19 Tokyo Shibaura Electric Co
JPS5165578A (en) * 1974-12-04 1976-06-07 Hitachi Ltd
JPS5182577A (en) * 1974-12-27 1976-07-20 Tokyo Shibaura Electric Co
JPS5182578A (en) * 1974-12-27 1976-07-20 Tokyo Shibaura Electric Co

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5157295A (en) * 1974-11-15 1976-05-19 Tokyo Shibaura Electric Co
JPS5165578A (en) * 1974-12-04 1976-06-07 Hitachi Ltd
JPS5182577A (en) * 1974-12-27 1976-07-20 Tokyo Shibaura Electric Co
JPS5182578A (en) * 1974-12-27 1976-07-20 Tokyo Shibaura Electric Co

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5844764A (en) * 1981-09-11 1983-03-15 Oki Electric Ind Co Ltd Manufacture of semiconductor integrated circuit device
JPH0471266A (en) * 1990-07-11 1992-03-05 Nec Yamagata Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS5639546B2 (en) 1981-09-14

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