JPS57113487A - Metal-insulator-semiconductor type static memory cell - Google Patents

Metal-insulator-semiconductor type static memory cell

Info

Publication number
JPS57113487A
JPS57113487A JP55187984A JP18798480A JPS57113487A JP S57113487 A JPS57113487 A JP S57113487A JP 55187984 A JP55187984 A JP 55187984A JP 18798480 A JP18798480 A JP 18798480A JP S57113487 A JPS57113487 A JP S57113487A
Authority
JP
Japan
Prior art keywords
memory cell
static memory
area
insulator
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55187984A
Other languages
Japanese (ja)
Inventor
Yuji Furumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55187984A priority Critical patent/JPS57113487A/en
Publication of JPS57113487A publication Critical patent/JPS57113487A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices

Landscapes

  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To raise the degree of integration of an MIS static memory cell, by forming it of a conductive layer on which a load resistance and the gate of an MIS type transistor have been formed in one body. CONSTITUTION:Codes BL, -BL; WL; 1; 2-4; 5; and 6 denote bit lines of aluminum; a word line made of aluminum or silicone resin; p<-> substrate; n<+> areas; load resistances R1, R2 and gates of silicone resin; and an insulated film; respectively, and a part being near the surface of the n<+> area is formed as a (p<+>) area by the enhancement processing. In this case, the (n<+>) area 3 is used as an earth wire by embedded wiring. According to this structure, since a resistor material occupying a considerable space is used as a gate material, too, high density of a static memory cell is realized, and also its process is executed by well-known manufacturing technique.
JP55187984A 1980-12-29 1980-12-29 Metal-insulator-semiconductor type static memory cell Pending JPS57113487A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55187984A JPS57113487A (en) 1980-12-29 1980-12-29 Metal-insulator-semiconductor type static memory cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55187984A JPS57113487A (en) 1980-12-29 1980-12-29 Metal-insulator-semiconductor type static memory cell

Publications (1)

Publication Number Publication Date
JPS57113487A true JPS57113487A (en) 1982-07-14

Family

ID=16215575

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55187984A Pending JPS57113487A (en) 1980-12-29 1980-12-29 Metal-insulator-semiconductor type static memory cell

Country Status (1)

Country Link
JP (1) JPS57113487A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6365674A (en) * 1986-09-05 1988-03-24 Agency Of Ind Science & Technol Non-volatile semiconductor random access memory

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5336489A (en) * 1976-09-16 1978-04-04 Sanyo Electric Co Ltd Semiconductor memory element
JPS5487463A (en) * 1977-12-20 1979-07-11 Ibm Flippflop
JPS5552590A (en) * 1978-10-12 1980-04-17 Pioneer Electronic Corp Semiconductor memory unit
JPS55166952A (en) * 1979-06-13 1980-12-26 Mitsubishi Electric Corp Bistable circuit

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5336489A (en) * 1976-09-16 1978-04-04 Sanyo Electric Co Ltd Semiconductor memory element
JPS5487463A (en) * 1977-12-20 1979-07-11 Ibm Flippflop
JPS5552590A (en) * 1978-10-12 1980-04-17 Pioneer Electronic Corp Semiconductor memory unit
JPS55166952A (en) * 1979-06-13 1980-12-26 Mitsubishi Electric Corp Bistable circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6365674A (en) * 1986-09-05 1988-03-24 Agency Of Ind Science & Technol Non-volatile semiconductor random access memory

Similar Documents

Publication Publication Date Title
TW343391B (en) Nonvolatile semiconductor memory and methods for manufacturing and using the same
EP0135036A2 (en) Semiconductor memory
JPS55156371A (en) Non-volatile semiconductor memory device
JPS5718356A (en) Semiconductor memory storage
JPS57113487A (en) Metal-insulator-semiconductor type static memory cell
JPS5649570A (en) Semiconductor memory and its manufacturing process
JPS5519820A (en) Semiconductor device
JPS57114282A (en) Non-volatile semiconductor memory
JPS56104473A (en) Semiconductor memory device and manufacture thereof
JPS56107575A (en) Manufacture of semicondutor device
KR910001763A (en) Semiconductor Non-Destructible Memory
JPS5739583A (en) Semiconductor device
JPS5621358A (en) Semiconductor memory device
JPS57104264A (en) Semiconductor memory cell
EP0376568A3 (en) Read-only memory cell and method of forming same
JPS56103459A (en) Semiconductor device
JP2572746B2 (en) Method for manufacturing semiconductor memory device
JPS56105667A (en) Semiconductor memory device
JPS57157561A (en) Non-destructive read-out semiconductor memory
JPS57111884A (en) Semiconductor storage device
JPS55108760A (en) Mis semiconductor integrated circuit and manufacture the same
JPS6457758A (en) Eeprom and its manufacture
JPS56104462A (en) Semiconductor memory device
JPS57176743A (en) Semiconductor integrated circuit device
JPS572563A (en) Semiconductor memory cell