JPS56107575A - Manufacture of semicondutor device - Google Patents

Manufacture of semicondutor device

Info

Publication number
JPS56107575A
JPS56107575A JP907080A JP907080A JPS56107575A JP S56107575 A JPS56107575 A JP S56107575A JP 907080 A JP907080 A JP 907080A JP 907080 A JP907080 A JP 907080A JP S56107575 A JPS56107575 A JP S56107575A
Authority
JP
Japan
Prior art keywords
electrode
polycrystalline silicon
memory cell
oxide film
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP907080A
Other languages
Japanese (ja)
Inventor
Noboru Hirakawa
Toru Tsujiide
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP907080A priority Critical patent/JPS56107575A/en
Priority to DE8181100607T priority patent/DE3163340D1/en
Priority to EP81100607A priority patent/EP0033159B1/en
Publication of JPS56107575A publication Critical patent/JPS56107575A/en
Priority to US06/555,420 priority patent/US4590508A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a memory cell stable against alpha rays by forming an electrode of constant potential on a gate electrode of a flip-flop transistor constituting the memory cell. CONSTITUTION:There are formed N type source and drain domains 103-5, 1103-7 on a P type semiconductor substrate 201, and a load resistance RL and silicon gates of transistors Q1, Q2 are formed with a polycrystalline silicon 104-1. The surface of the silicon gate is oxidized to form an oxide film 207. Then, a nitride film 208 is formed on the oxide film 207, which is then oxidized to form an oxide film 209. A polycrystalline silicon electrode 106 is formed thereon, and a gate electrode and an electrostatic capacity are formed. Further, a capacity with its one end connected to a constant potential source is formed between the gate electrode and the polycrystalline silicon electrode 106 by connecting the polycrystalline silicon electrode 106 to the fixed potential. A memory cell stable against external factors of alpha rays and others is thus obtainable.
JP907080A 1980-01-29 1980-01-29 Manufacture of semicondutor device Pending JPS56107575A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP907080A JPS56107575A (en) 1980-01-29 1980-01-29 Manufacture of semicondutor device
DE8181100607T DE3163340D1 (en) 1980-01-29 1981-01-28 Semiconductor device
EP81100607A EP0033159B1 (en) 1980-01-29 1981-01-28 Semiconductor device
US06/555,420 US4590508A (en) 1980-01-29 1983-11-29 MOS static ram with capacitively loaded gates to prevent alpha soft errors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP907080A JPS56107575A (en) 1980-01-29 1980-01-29 Manufacture of semicondutor device

Publications (1)

Publication Number Publication Date
JPS56107575A true JPS56107575A (en) 1981-08-26

Family

ID=11710343

Family Applications (1)

Application Number Title Priority Date Filing Date
JP907080A Pending JPS56107575A (en) 1980-01-29 1980-01-29 Manufacture of semicondutor device

Country Status (1)

Country Link
JP (1) JPS56107575A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58155752A (en) * 1982-03-12 1983-09-16 Hitachi Ltd Semiconductor memory storage
JPS5923559A (en) * 1982-07-30 1984-02-07 Nec Corp Semiconductor device
JPS6028262A (en) * 1983-07-26 1985-02-13 Nec Corp Semiconductor memory cell
US4679171A (en) * 1985-02-07 1987-07-07 Visic, Inc. MOS/CMOS memory cell
JPH02150062A (en) * 1988-11-30 1990-06-08 Nec Corp Cmos type static memory

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58155752A (en) * 1982-03-12 1983-09-16 Hitachi Ltd Semiconductor memory storage
JPS5923559A (en) * 1982-07-30 1984-02-07 Nec Corp Semiconductor device
JPS6028262A (en) * 1983-07-26 1985-02-13 Nec Corp Semiconductor memory cell
US4679171A (en) * 1985-02-07 1987-07-07 Visic, Inc. MOS/CMOS memory cell
JPH02150062A (en) * 1988-11-30 1990-06-08 Nec Corp Cmos type static memory

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