JPS5660052A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS5660052A
JPS5660052A JP14569680A JP14569680A JPS5660052A JP S5660052 A JPS5660052 A JP S5660052A JP 14569680 A JP14569680 A JP 14569680A JP 14569680 A JP14569680 A JP 14569680A JP S5660052 A JPS5660052 A JP S5660052A
Authority
JP
Japan
Prior art keywords
electrode
insulating film
gate
capacitor
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14569680A
Other languages
Japanese (ja)
Other versions
JPS6220709B2 (en
Inventor
Fujio Masuoka
Hisakazu Iizuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14569680A priority Critical patent/JPS5660052A/en
Publication of JPS5660052A publication Critical patent/JPS5660052A/en
Publication of JPS6220709B2 publication Critical patent/JPS6220709B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To reduce the occupying area of a memory cell and to accelerate the operating speed thereof by forming a column line wiring part connected through an insulating film to a gate electrode on a capacitor for integrated memory. CONSTITUTION:The first electrode 43 is provided through a silicon dioxide 42 on a P<+> type silicon substrate 41 and positive potential is applied to the electrode 43, thereby forming an N type inversion layer 44 on the surface of a substrate. A capacitor 45 is formed of the layer 44 and the electrode 43. The second electrode 48 is provided through a gate insulating film 47, and an MOS transistor 49 is formed of a gate electrode 48, an N<+> type region 46, an inversion layer 44 and an insulating film 47. The electrode 48 is extended through a thick insulating film 50 on the electrode 43, and is contacted with the column line external wire 53 through the opening 52 of the protecting insulating film 51. The capacity between the first electrode and the second electrode can be reduced by the film 50 and the operating speed can be accelerated. The region 46 is used as a digit line.
JP14569680A 1980-10-20 1980-10-20 Semiconductor memory device Granted JPS5660052A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14569680A JPS5660052A (en) 1980-10-20 1980-10-20 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14569680A JPS5660052A (en) 1980-10-20 1980-10-20 Semiconductor memory device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP50154769A Division JPS5279679A (en) 1975-12-26 1975-12-26 Semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS5660052A true JPS5660052A (en) 1981-05-23
JPS6220709B2 JPS6220709B2 (en) 1987-05-08

Family

ID=15390984

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14569680A Granted JPS5660052A (en) 1980-10-20 1980-10-20 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5660052A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03505147A (en) * 1989-03-27 1991-11-07 ヒューズ・エアクラフト・カンパニー Non-volatile process applied to digital and analog dual level metal MOS process
US5633520A (en) * 1994-09-01 1997-05-27 United Microelectronics Corporation Neuron MOSFET with different interpolysilicon oxide

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3387286A (en) * 1967-07-14 1968-06-04 Ibm Field-effect transistor memory
JPS4964382A (en) * 1972-06-30 1974-06-21

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3387286A (en) * 1967-07-14 1968-06-04 Ibm Field-effect transistor memory
JPS4964382A (en) * 1972-06-30 1974-06-21

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03505147A (en) * 1989-03-27 1991-11-07 ヒューズ・エアクラフト・カンパニー Non-volatile process applied to digital and analog dual level metal MOS process
US5633520A (en) * 1994-09-01 1997-05-27 United Microelectronics Corporation Neuron MOSFET with different interpolysilicon oxide

Also Published As

Publication number Publication date
JPS6220709B2 (en) 1987-05-08

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