JPS56104461A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS56104461A
JPS56104461A JP733380A JP733380A JPS56104461A JP S56104461 A JPS56104461 A JP S56104461A JP 733380 A JP733380 A JP 733380A JP 733380 A JP733380 A JP 733380A JP S56104461 A JPS56104461 A JP S56104461A
Authority
JP
Japan
Prior art keywords
capacitor
type
electrode
region
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP733380A
Other languages
Japanese (ja)
Other versions
JPS6023504B2 (en
Inventor
Kiyoshi Miyasaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55007333A priority Critical patent/JPS6023504B2/en
Publication of JPS56104461A publication Critical patent/JPS56104461A/en
Publication of JPS6023504B2 publication Critical patent/JPS6023504B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Memories (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To enable the integration of the semiconductor memory device by using a part of field shielding layer formed on a cell isolating region as one electrode of a capacitor and forming the device by a self-alignment system. CONSTITUTION:A polycrystalline silicon layer is formed on a P type semiconductor substrate 10 as a shielding layer 11 and a capacitor electrode 13. A bit line 16 for connecting an N<+> type drain region 15 is formed in parallel with a P<+> type cell isolating region 12 in the semiconductor substrate 10, and a word line 17 is connected to a gate electrode 18 perpendicularly to the bit line 16. An N-channel MOSFET is formed of the gate electrode 18, the source region 14 and the drain region 15, and a capacitor is formed of the capacitor electrode 13, the source region 14 and the oxide film interposed therebetween. A P<-> type layer 19 operates to suppress the expansion of the depletion layer so as to increase the junction capacitor. The integration of the device can be increased by forming the structure of a self-alignment system.
JP55007333A 1980-01-24 1980-01-24 semiconductor memory device Expired JPS6023504B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55007333A JPS6023504B2 (en) 1980-01-24 1980-01-24 semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55007333A JPS6023504B2 (en) 1980-01-24 1980-01-24 semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS56104461A true JPS56104461A (en) 1981-08-20
JPS6023504B2 JPS6023504B2 (en) 1985-06-07

Family

ID=11663020

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55007333A Expired JPS6023504B2 (en) 1980-01-24 1980-01-24 semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS6023504B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6248041A (en) * 1985-08-28 1987-03-02 Nec Corp Semiconductor integrated circuit device
JPH03203352A (en) * 1989-12-29 1991-09-05 Nec Corp Semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5359384A (en) * 1976-09-13 1978-05-29 Texas Instruments Inc Nnchannel mos silicon gate ram cell

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5359384A (en) * 1976-09-13 1978-05-29 Texas Instruments Inc Nnchannel mos silicon gate ram cell

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6248041A (en) * 1985-08-28 1987-03-02 Nec Corp Semiconductor integrated circuit device
JPH03203352A (en) * 1989-12-29 1991-09-05 Nec Corp Semiconductor device

Also Published As

Publication number Publication date
JPS6023504B2 (en) 1985-06-07

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