JPS56158471A - Manufacture of semiconductor storage device - Google Patents

Manufacture of semiconductor storage device

Info

Publication number
JPS56158471A
JPS56158471A JP6428180A JP6428180A JPS56158471A JP S56158471 A JPS56158471 A JP S56158471A JP 6428180 A JP6428180 A JP 6428180A JP 6428180 A JP6428180 A JP 6428180A JP S56158471 A JPS56158471 A JP S56158471A
Authority
JP
Japan
Prior art keywords
oxide film
bit line
substrate
section
capacity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6428180A
Other languages
Japanese (ja)
Inventor
Masahiko Denda
Natsuo Tsubouchi
Shinichi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6428180A priority Critical patent/JPS56158471A/en
Publication of JPS56158471A publication Critical patent/JPS56158471A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To obtain the cell having the reduced influence of alpha rays as well as to enable to obtain a high speed operation for MOSRAM by a method wherein a bit line is formed using the polycrystalline Si of the conductive type reverse to a substrate, is arranged on a thick oxide film and a diffusing region is provided only at the section connected to the substrate. CONSTITUTION:The thick oxide film 2 is formed on a P type substrate 1, the oxide film 2 located at a capacity section and an FET section is removed and a thin oxide film 2a is formed. Then, an aperture is provided on the oxide film 2a located at the section (source and drain section) connecting to the bit line, the bit line consisting of an N<+> doped polycrystalline Si 6 is provided and an N<+> layer 8 is diffused on the substrate. Then, a capacity electrode 3 and a gate electrode 4 are formed using a double-layer polycrystalline Si structure and is used as a cell FET. Through these procedures, the area of N<+> region connected to the bit line is reduced, the carrier is hard to be collected by the alpha rays and the variation of the bit line electrode can be prevented. Also, because of the wiring performed on the thick oxide film, the capacity between the bit line and the substrate is reduced and a high speed operation can be performed.
JP6428180A 1980-05-12 1980-05-12 Manufacture of semiconductor storage device Pending JPS56158471A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6428180A JPS56158471A (en) 1980-05-12 1980-05-12 Manufacture of semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6428180A JPS56158471A (en) 1980-05-12 1980-05-12 Manufacture of semiconductor storage device

Publications (1)

Publication Number Publication Date
JPS56158471A true JPS56158471A (en) 1981-12-07

Family

ID=13253682

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6428180A Pending JPS56158471A (en) 1980-05-12 1980-05-12 Manufacture of semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS56158471A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3529199A1 (en) * 1984-08-16 1986-02-27 Nissan Motor Co., Ltd., Yokohama, Kanagawa VIBRATION DAMPING SYSTEM

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3529199A1 (en) * 1984-08-16 1986-02-27 Nissan Motor Co., Ltd., Yokohama, Kanagawa VIBRATION DAMPING SYSTEM

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