JPS57162371A - Mos semiconductor memory device - Google Patents

Mos semiconductor memory device

Info

Publication number
JPS57162371A
JPS57162371A JP4669181A JP4669181A JPS57162371A JP S57162371 A JPS57162371 A JP S57162371A JP 4669181 A JP4669181 A JP 4669181A JP 4669181 A JP4669181 A JP 4669181A JP S57162371 A JPS57162371 A JP S57162371A
Authority
JP
Japan
Prior art keywords
gate
erasing
writing
mosfet
memory device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4669181A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP4669181A priority Critical patent/JPS57162371A/en
Publication of JPS57162371A publication Critical patent/JPS57162371A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling

Abstract

PURPOSE:To enable writing and erasing with low voltage by forming an MOS region for writing and erasing to a floating gate through a tunnel barrier film and an MOSFET connected to the gate. CONSTITUTION:A floating gate 6 is formed through a tunnel barrier film 5 of 20-200Angstrom and the first gate electrode 8 is formed through the second insulating film 7 on the N<+> type region 4 of a P type Si substrate 1 to form an MOS region for writing and erasing, and an MOSFET region made of a source 2, a drain 3 and a gate electrode 10 is formed, the electrode 10 and the gate 6 are electrically connected, and the conductivity of the channel of the MOSFET is varied by the charge stored in floating. In this manner, the writing and erasing with low voltage and high speed can be performed.
JP4669181A 1981-03-30 1981-03-30 Mos semiconductor memory device Pending JPS57162371A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4669181A JPS57162371A (en) 1981-03-30 1981-03-30 Mos semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4669181A JPS57162371A (en) 1981-03-30 1981-03-30 Mos semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS57162371A true JPS57162371A (en) 1982-10-06

Family

ID=12754399

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4669181A Pending JPS57162371A (en) 1981-03-30 1981-03-30 Mos semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS57162371A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6413145U (en) * 1987-07-09 1989-01-24
JP4918221B2 (en) * 2002-06-18 2012-04-18 リベル Material evaporation chamber with differential vacuum pumping

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5197345A (en) * 1975-01-17 1976-08-26
JPS51117838A (en) * 1975-04-10 1976-10-16 Shindengen Electric Mfg Co Ltd Semiconductor memory device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5197345A (en) * 1975-01-17 1976-08-26
JPS51117838A (en) * 1975-04-10 1976-10-16 Shindengen Electric Mfg Co Ltd Semiconductor memory device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6413145U (en) * 1987-07-09 1989-01-24
JP4918221B2 (en) * 2002-06-18 2012-04-18 リベル Material evaporation chamber with differential vacuum pumping
US8894769B2 (en) 2002-06-18 2014-11-25 Riber Material evaporation chamber with differential vacuum pumping

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