JPS57176757A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57176757A
JPS57176757A JP56060889A JP6088981A JPS57176757A JP S57176757 A JPS57176757 A JP S57176757A JP 56060889 A JP56060889 A JP 56060889A JP 6088981 A JP6088981 A JP 6088981A JP S57176757 A JPS57176757 A JP S57176757A
Authority
JP
Japan
Prior art keywords
electrode
single crystal
igfet
capacitor
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56060889A
Other languages
Japanese (ja)
Other versions
JPH0320906B2 (en
Inventor
Mitsuru Sakamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56060889A priority Critical patent/JPS57176757A/en
Publication of JPS57176757A publication Critical patent/JPS57176757A/en
Publication of JPH0320906B2 publication Critical patent/JPH0320906B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To reduce the area of a capacitor by forming a single crystal layer through an insulating film on a semiconductor substrate, forming an IGFET in the single crystal layer, and providing a capacitor utilizing the insulating films formed on and under the drain of the IGFET. CONSTITUTION:A field oxidized film 102, a thin oxidized film 108 and an exposed part 112 are formed on a semiconductor substrate 101, a single crystal layer is formed by utilizing a laser annealing or the like thereon, an IGFET having a source 103, a channel 105, a drain 104 (107 represents a gate electrode) is formed in the single crystal, an electrode 110 is formed through an insulating film 109 on a drain region 104, thereby forming a capacitor having one electrode of the substrate 101 and the electrode 110 and other electrode of the drain region 104. In this manner, the area of an information storage capacity section can be reduced to a half of the conventional one.
JP56060889A 1981-04-22 1981-04-22 Semiconductor device Granted JPS57176757A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56060889A JPS57176757A (en) 1981-04-22 1981-04-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56060889A JPS57176757A (en) 1981-04-22 1981-04-22 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS57176757A true JPS57176757A (en) 1982-10-30
JPH0320906B2 JPH0320906B2 (en) 1991-03-20

Family

ID=13155368

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56060889A Granted JPS57176757A (en) 1981-04-22 1981-04-22 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57176757A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5982761A (en) * 1982-11-04 1984-05-12 Hitachi Ltd Semiconductor memory
JPS59138377A (en) * 1983-01-28 1984-08-08 Agency Of Ind Science & Technol Metal insulator semiconductor transistor and manufacture thereof
DE10248723A1 (en) * 2002-10-18 2004-05-06 Infineon Technologies Ag Integrated circuit arrangement with capacitors and preferably planar transistors and manufacturing processes
DE10248722A1 (en) * 2002-10-18 2004-05-06 Infineon Technologies Ag Integrated circuit arrangement with capacitor and manufacturing process

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5350985A (en) * 1976-10-20 1978-05-09 Fujitsu Ltd Semiconductor memory device
JPS5519820A (en) * 1978-07-27 1980-02-12 Nec Corp Semiconductor device
JPS5562763A (en) * 1978-11-02 1980-05-12 Nec Corp Semiconductor device
JPS56107571A (en) * 1980-01-30 1981-08-26 Fujitsu Ltd Semiconductor memory storage device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5350985A (en) * 1976-10-20 1978-05-09 Fujitsu Ltd Semiconductor memory device
JPS5519820A (en) * 1978-07-27 1980-02-12 Nec Corp Semiconductor device
JPS5562763A (en) * 1978-11-02 1980-05-12 Nec Corp Semiconductor device
JPS56107571A (en) * 1980-01-30 1981-08-26 Fujitsu Ltd Semiconductor memory storage device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5982761A (en) * 1982-11-04 1984-05-12 Hitachi Ltd Semiconductor memory
JPH0342514B2 (en) * 1982-11-04 1991-06-27
JPS59138377A (en) * 1983-01-28 1984-08-08 Agency Of Ind Science & Technol Metal insulator semiconductor transistor and manufacture thereof
DE10248723A1 (en) * 2002-10-18 2004-05-06 Infineon Technologies Ag Integrated circuit arrangement with capacitors and preferably planar transistors and manufacturing processes
DE10248722A1 (en) * 2002-10-18 2004-05-06 Infineon Technologies Ag Integrated circuit arrangement with capacitor and manufacturing process
US7173302B2 (en) 2002-10-18 2007-02-06 Infineon Technologies Ag Integrated circuit arrangement having capacitors and having planar transistors and fabrication method
US7291877B2 (en) 2002-10-18 2007-11-06 Infineon Technologies, Ag Integrated circuit arrangement with capacitor
US7820505B2 (en) 2002-10-18 2010-10-26 Infineon Technologies, Ag Integrated circuit arrangement with capacitor and fabrication method
US8124475B2 (en) 2002-10-18 2012-02-28 Infineon Technologies Ag Integrated circuit arrangement with capacitor and fabrication method

Also Published As

Publication number Publication date
JPH0320906B2 (en) 1991-03-20

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