JPS641275A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS641275A
JPS641275A JP15707987A JP15707987A JPS641275A JP S641275 A JPS641275 A JP S641275A JP 15707987 A JP15707987 A JP 15707987A JP 15707987 A JP15707987 A JP 15707987A JP S641275 A JPS641275 A JP S641275A
Authority
JP
Japan
Prior art keywords
source
drain
gate
semiconductor substrate
semiconductor region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15707987A
Other languages
Japanese (ja)
Other versions
JPH011275A (en
Inventor
Shuichi Oda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62-157079A priority Critical patent/JPH011275A/en
Priority claimed from JP62-157079A external-priority patent/JPH011275A/en
Publication of JPS641275A publication Critical patent/JPS641275A/en
Publication of JPH011275A publication Critical patent/JPH011275A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To improve performance together with minimizing gate length, by composing separate field-effect transistors respectively of an insulating film, a semiconductor region, a source and a drain at the upper and lower parts of a gate.
CONSTITUTION: The first source 9a and a drain 9b of a diffusion layer are opposedly formed on a semiconductor substrate 8. Further, a gate 11 surrounded by an oxide film is formed on the semiconductor substrate 8 between the source and the drain 9b. Further, source electrodes 12a, 13a and drains 12b, 13b are formed on the semiconductor substrate 8. Still further, the second source 14a and a drain 14b of the diffusion layer are provided on the source electrode 12a and the drain electrode 12b respectively, and between these the second semiconductor region 15 is formed. Then, when voltage is impressed on the gate 11, a channel is formed between the source 9a and the drain 9b on the semiconductor substrate 8, alike a channel is formed between the source 14a and the drain 14b on the second semiconductor region 15. Accordingly, performance is improved without increasing the size in the length direction of the gate.
COPYRIGHT: (C)1989,JPO&Japio
JP62-157079A 1987-06-23 semiconductor equipment Pending JPH011275A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62-157079A JPH011275A (en) 1987-06-23 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62-157079A JPH011275A (en) 1987-06-23 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS641275A true JPS641275A (en) 1989-01-05
JPH011275A JPH011275A (en) 1989-01-05

Family

ID=

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100772935B1 (en) 2006-08-07 2007-11-02 삼성전자주식회사 Transistor and method of manufacturing the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57192077A (en) * 1981-05-22 1982-11-26 Hitachi Ltd Semiconductor device
JPS61102057A (en) * 1984-10-25 1986-05-20 Sony Corp Manufacture of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57192077A (en) * 1981-05-22 1982-11-26 Hitachi Ltd Semiconductor device
JPS61102057A (en) * 1984-10-25 1986-05-20 Sony Corp Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100772935B1 (en) 2006-08-07 2007-11-02 삼성전자주식회사 Transistor and method of manufacturing the same

Similar Documents

Publication Publication Date Title
JPS55151363A (en) Mos semiconductor device and fabricating method of the same
EP0239250A3 (en) Short channel mos transistor
JPS56110264A (en) High withstand voltage mos transistor
JPS54136275A (en) Field effect transistor of isolation gate
JPS641275A (en) Semiconductor device
JPS5556663A (en) Insulating-gate type field-effect transistor
JPS56126977A (en) Junction type field effect transistor
JPS57118664A (en) Semiconductor device
JPS57166067A (en) Bias generating unit for substrate
JPS6461060A (en) Semiconductor device
JPS55107229A (en) Method of manufacturing semiconductor device
JPS6461059A (en) Semiconductor device
JPS55108773A (en) Insulating gate type field effect transistor
JPS6417475A (en) Manufacture of mos semiconductor device
JPS5286086A (en) Field effect transistor
JPS6439065A (en) Thin film field-effect transistor
JPS5552262A (en) Mos semiconductor device
JPS57201080A (en) Semiconductor device
JPS5736868A (en) Manufacture of nonvolatile semiconductor memory device
JPS52147983A (en) Insulation gate type semiconductor device
JPS558015A (en) Mos type semiconductor device manufacturing method
JPS55102274A (en) Insulated gate field effect transistor
JPS64762A (en) Semiconductor device
JPS5678157A (en) Semiconductor device
JPS5593270A (en) Insulating gate type semiconductor device