JPS641275A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS641275A JPS641275A JP15707987A JP15707987A JPS641275A JP S641275 A JPS641275 A JP S641275A JP 15707987 A JP15707987 A JP 15707987A JP 15707987 A JP15707987 A JP 15707987A JP S641275 A JPS641275 A JP S641275A
- Authority
- JP
- Japan
- Prior art keywords
- source
- drain
- gate
- semiconductor substrate
- semiconductor region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To improve performance together with minimizing gate length, by composing separate field-effect transistors respectively of an insulating film, a semiconductor region, a source and a drain at the upper and lower parts of a gate.
CONSTITUTION: The first source 9a and a drain 9b of a diffusion layer are opposedly formed on a semiconductor substrate 8. Further, a gate 11 surrounded by an oxide film is formed on the semiconductor substrate 8 between the source and the drain 9b. Further, source electrodes 12a, 13a and drains 12b, 13b are formed on the semiconductor substrate 8. Still further, the second source 14a and a drain 14b of the diffusion layer are provided on the source electrode 12a and the drain electrode 12b respectively, and between these the second semiconductor region 15 is formed. Then, when voltage is impressed on the gate 11, a channel is formed between the source 9a and the drain 9b on the semiconductor substrate 8, alike a channel is formed between the source 14a and the drain 14b on the second semiconductor region 15. Accordingly, performance is improved without increasing the size in the length direction of the gate.
COPYRIGHT: (C)1989,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62-157079A JPH011275A (en) | 1987-06-23 | semiconductor equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62-157079A JPH011275A (en) | 1987-06-23 | semiconductor equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS641275A true JPS641275A (en) | 1989-01-05 |
JPH011275A JPH011275A (en) | 1989-01-05 |
Family
ID=
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100772935B1 (en) | 2006-08-07 | 2007-11-02 | 삼성전자주식회사 | Transistor and method of manufacturing the same |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57192077A (en) * | 1981-05-22 | 1982-11-26 | Hitachi Ltd | Semiconductor device |
JPS61102057A (en) * | 1984-10-25 | 1986-05-20 | Sony Corp | Manufacture of semiconductor device |
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57192077A (en) * | 1981-05-22 | 1982-11-26 | Hitachi Ltd | Semiconductor device |
JPS61102057A (en) * | 1984-10-25 | 1986-05-20 | Sony Corp | Manufacture of semiconductor device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100772935B1 (en) | 2006-08-07 | 2007-11-02 | 삼성전자주식회사 | Transistor and method of manufacturing the same |
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