JPS5593270A - Insulating gate type semiconductor device - Google Patents
Insulating gate type semiconductor deviceInfo
- Publication number
- JPS5593270A JPS5593270A JP150879A JP150879A JPS5593270A JP S5593270 A JPS5593270 A JP S5593270A JP 150879 A JP150879 A JP 150879A JP 150879 A JP150879 A JP 150879A JP S5593270 A JPS5593270 A JP S5593270A
- Authority
- JP
- Japan
- Prior art keywords
- metal ion
- layers
- layer
- film
- sio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To obtain IGFET having a small parasitic capacitance and a short channel length, by providing a layer that contains an alkali metal ion on the opposing terminal edges of a source and a drain.
CONSTITUTION: n-Type source drains 12 and 13 are provided on the surface of p-type Si substrate 11 at a distance of d, which is covered with SiO2 film 22. Next, an alkali metal ion like Na is selectively evaporated via a mask to form layer 14 and 15. Further, SiO2 film 23 is laminated to prevent the metal ion from diffusing to the outside. Then electrode 17 is formed, by modifying films 22 and 23 to gate insulating film 16 between layers 14 and 15, and also electrodes 18 and 19 are attached on the layers 12 and 13. In this constitution, the substantial channel length is equivalent to the length of layer 16, which enables therby to fully enlarge the distance d and to increase the operating voltage without causing a punch-through. Also, the gate electrode does not stretch over layers 12 and 13 and the parasitic capacity is small. Accordingly, the switching characteristic can be improved.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP150879A JPS5593270A (en) | 1979-01-10 | 1979-01-10 | Insulating gate type semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP150879A JPS5593270A (en) | 1979-01-10 | 1979-01-10 | Insulating gate type semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5593270A true JPS5593270A (en) | 1980-07-15 |
Family
ID=11503413
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP150879A Pending JPS5593270A (en) | 1979-01-10 | 1979-01-10 | Insulating gate type semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5593270A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5869371A (en) * | 1995-06-07 | 1999-02-09 | Stmicroelectronics, Inc. | Structure and process for reducing the on-resistance of mos-gated power devices |
-
1979
- 1979-01-10 JP JP150879A patent/JPS5593270A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5869371A (en) * | 1995-06-07 | 1999-02-09 | Stmicroelectronics, Inc. | Structure and process for reducing the on-resistance of mos-gated power devices |
US6046473A (en) * | 1995-06-07 | 2000-04-04 | Stmicroelectronics, Inc. | Structure and process for reducing the on-resistance of MOS-gated power devices |
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