JPS5521170A - Semiconductor memory - Google Patents

Semiconductor memory

Info

Publication number
JPS5521170A
JPS5521170A JP9433878A JP9433878A JPS5521170A JP S5521170 A JPS5521170 A JP S5521170A JP 9433878 A JP9433878 A JP 9433878A JP 9433878 A JP9433878 A JP 9433878A JP S5521170 A JPS5521170 A JP S5521170A
Authority
JP
Japan
Prior art keywords
electrode
capacitor
diffusion layer
transistor
memory cells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9433878A
Other languages
Japanese (ja)
Inventor
Shinichiro Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP9433878A priority Critical patent/JPS5521170A/en
Publication of JPS5521170A publication Critical patent/JPS5521170A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To raise an integration rate by arranging a capacitor of adjacent memory cells above and under a standard potential electrode put on a common use. CONSTITUTION:A N-type impurity diffusion layer 221 and 222 formed on a P-type silicon substrate 1 forms a source region or a drain of transistor T21 and T22 and a data line. A N-type impurity diffusion layer 23 forms a source or a drain region of the transistor T22. A field diffusion layer film 24 and channel stopper 25 are serves to separate a pair of memory cells substantially. An inversion layer 28 is induced by an electrode 27 on the substrate surface immediately under it, a capacitor C21 is formed. A capacitor C22 is formed between an electrode 30 and electrode 27. A gate electrode 32 is arranged on an insulation film 33, and a word line 36 is connected through a contact hole 37 to the gate electrode.
JP9433878A 1978-08-02 1978-08-02 Semiconductor memory Pending JPS5521170A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9433878A JPS5521170A (en) 1978-08-02 1978-08-02 Semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9433878A JPS5521170A (en) 1978-08-02 1978-08-02 Semiconductor memory

Publications (1)

Publication Number Publication Date
JPS5521170A true JPS5521170A (en) 1980-02-15

Family

ID=14107494

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9433878A Pending JPS5521170A (en) 1978-08-02 1978-08-02 Semiconductor memory

Country Status (1)

Country Link
JP (1) JPS5521170A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4641166A (en) * 1982-12-20 1987-02-03 Fujitsu Limited Semiconductor memory device having stacked capacitor-type memory cells
US4649406A (en) * 1982-12-20 1987-03-10 Fujitsu Limited Semiconductor memory device having stacked capacitor-type memory cells

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4641166A (en) * 1982-12-20 1987-02-03 Fujitsu Limited Semiconductor memory device having stacked capacitor-type memory cells
US4649406A (en) * 1982-12-20 1987-03-10 Fujitsu Limited Semiconductor memory device having stacked capacitor-type memory cells

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