JPS5630769A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5630769A
JPS5630769A JP10685679A JP10685679A JPS5630769A JP S5630769 A JPS5630769 A JP S5630769A JP 10685679 A JP10685679 A JP 10685679A JP 10685679 A JP10685679 A JP 10685679A JP S5630769 A JPS5630769 A JP S5630769A
Authority
JP
Japan
Prior art keywords
region
drain
semiconductor device
source
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10685679A
Other languages
Japanese (ja)
Inventor
Kenichi Tanaka
Keizo Sakiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP10685679A priority Critical patent/JPS5630769A/en
Publication of JPS5630769A publication Critical patent/JPS5630769A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To stabilize the characteristics of a semiconductor device by shortening the width of a channel of a drain region shorter than that of a source side to thereby reduce the adverse affect of the drain voltage thereto in a silicon ultraviolet ray erasable type nonvolatile memory semiconductor device having double gate architectures. CONSTITUTION:A drain region 2 and a source region 3 are formed in a semiconductor substrate 1, and a floating gage 5 is formed through a first insulating film 4 on a channel region of the substrate 1 disposed therebetween. Further, a control gate 7 is formed through a second insulating film 6 thereon as a nonvolatile memory semiconductor device. In this configuration a drain region 2 disposed around the channel region is formed to incorporate in a narrow width as a drain region 2', and the width l of an impurity penetrating region 8 formed in the channel region is formed smaller than that L of an impurity penetrating region 9 of the other source region 3 side. The value of the capacity between the floating gate and the drain can be thus reduced, and the decrease in the thershold voltage and in the withstand voltage between the source and the drain can be eliminated.
JP10685679A 1979-08-21 1979-08-21 Semiconductor device Pending JPS5630769A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10685679A JPS5630769A (en) 1979-08-21 1979-08-21 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10685679A JPS5630769A (en) 1979-08-21 1979-08-21 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5630769A true JPS5630769A (en) 1981-03-27

Family

ID=14444224

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10685679A Pending JPS5630769A (en) 1979-08-21 1979-08-21 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5630769A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040037327A (en) * 2002-10-28 2004-05-07 삼성전자주식회사 Nonvolatile memory device having asymmetric source/drain region and fabricating method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040037327A (en) * 2002-10-28 2004-05-07 삼성전자주식회사 Nonvolatile memory device having asymmetric source/drain region and fabricating method thereof

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