JPS5739583A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5739583A
JPS5739583A JP11505880A JP11505880A JPS5739583A JP S5739583 A JPS5739583 A JP S5739583A JP 11505880 A JP11505880 A JP 11505880A JP 11505880 A JP11505880 A JP 11505880A JP S5739583 A JPS5739583 A JP S5739583A
Authority
JP
Japan
Prior art keywords
gate electrode
sio2
insulating film
polycrystalline silicon
uneven surfaces
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11505880A
Other languages
Japanese (ja)
Inventor
Masashi Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11505880A priority Critical patent/JPS5739583A/en
Publication of JPS5739583A publication Critical patent/JPS5739583A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To increase the electrostatic capacity between laminated first and second electrodes with small element occupying area in a nonvolatile memory having a floating gate electrode by facing the first and second electrode with uneven surfaces. CONSTITUTION:The first gate insulating film 2 of SiO2 is formed on a p type silicon substrate 1, and a floating gate electrode 3 of polycrystalline silicon and the second gate insulating film 4 of SiO2 are formed on the film 2 in such a manner that the uneven surfaces are faced. A control gate electrode 5 of polycrystalline silicon is accumulated thereon, and source 6 and drain 7 are further formed thereon.
JP11505880A 1980-08-21 1980-08-21 Semiconductor device Pending JPS5739583A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11505880A JPS5739583A (en) 1980-08-21 1980-08-21 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11505880A JPS5739583A (en) 1980-08-21 1980-08-21 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5739583A true JPS5739583A (en) 1982-03-04

Family

ID=14653123

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11505880A Pending JPS5739583A (en) 1980-08-21 1980-08-21 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5739583A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6477175A (en) * 1987-09-18 1989-03-23 Toshiba Corp Nonvolatile semiconductor memory device
US4970565A (en) * 1988-09-01 1990-11-13 Atmel Corporation Sealed charge storage structure
US6593186B1 (en) * 1998-04-30 2003-07-15 Nec Electronics Corporation Method for manufacturing non-volatile semiconductor memory device
KR100393147B1 (en) * 2000-06-26 2003-07-31 엔이씨 일렉트로닉스 코포레이션 Semiconductor memory device and method of fabricating the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6477175A (en) * 1987-09-18 1989-03-23 Toshiba Corp Nonvolatile semiconductor memory device
US4970565A (en) * 1988-09-01 1990-11-13 Atmel Corporation Sealed charge storage structure
US6593186B1 (en) * 1998-04-30 2003-07-15 Nec Electronics Corporation Method for manufacturing non-volatile semiconductor memory device
KR100393147B1 (en) * 2000-06-26 2003-07-31 엔이씨 일렉트로닉스 코포레이션 Semiconductor memory device and method of fabricating the same

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