JPS57160167A - Nonvolatile semiconductor memory device - Google Patents

Nonvolatile semiconductor memory device

Info

Publication number
JPS57160167A
JPS57160167A JP56045283A JP4528381A JPS57160167A JP S57160167 A JPS57160167 A JP S57160167A JP 56045283 A JP56045283 A JP 56045283A JP 4528381 A JP4528381 A JP 4528381A JP S57160167 A JPS57160167 A JP S57160167A
Authority
JP
Japan
Prior art keywords
region
substrate
memory device
semiconductor memory
nonvolatile semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56045283A
Other languages
Japanese (ja)
Inventor
Masaaki Kamiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP56045283A priority Critical patent/JPS57160167A/en
Publication of JPS57160167A publication Critical patent/JPS57160167A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To remarkably simplify element structure and to reduce the area as well by providing a region in which the surface potential is strongly controlled and a region in which the surface is weakly controlled by a stray gate electrode. CONSTITUTION:An n<+> type injector region 1 and a control gate region 28 are formed in a substrate 4 which is a p type semiconductor. A stray gate electrode 3 is formed by setting apart from the region 28 and an insulating film 5 on the substrate 4. Furthermore, the electrode 3 is provided on the substrate 4 by adjoining the region 1 to a degree having the influence 33 upon up to the end section of the region 1.
JP56045283A 1981-03-27 1981-03-27 Nonvolatile semiconductor memory device Pending JPS57160167A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56045283A JPS57160167A (en) 1981-03-27 1981-03-27 Nonvolatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56045283A JPS57160167A (en) 1981-03-27 1981-03-27 Nonvolatile semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS57160167A true JPS57160167A (en) 1982-10-02

Family

ID=12714974

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56045283A Pending JPS57160167A (en) 1981-03-27 1981-03-27 Nonvolatile semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS57160167A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007250948A (en) * 2006-03-17 2007-09-27 Seiko Epson Corp Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007250948A (en) * 2006-03-17 2007-09-27 Seiko Epson Corp Semiconductor device
US7663180B2 (en) 2006-03-17 2010-02-16 Seiko Epson Corporation Semiconductor device
JP4622902B2 (en) * 2006-03-17 2011-02-02 セイコーエプソン株式会社 Nonvolatile semiconductor memory device

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