JPS57160164A - Nonvolatile semiconductor memory - Google Patents
Nonvolatile semiconductor memoryInfo
- Publication number
- JPS57160164A JPS57160164A JP56045280A JP4528081A JPS57160164A JP S57160164 A JPS57160164 A JP S57160164A JP 56045280 A JP56045280 A JP 56045280A JP 4528081 A JP4528081 A JP 4528081A JP S57160164 A JPS57160164 A JP S57160164A
- Authority
- JP
- Japan
- Prior art keywords
- region
- insulating film
- semiconductor
- semiconductor substrate
- semiconductor memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 7
- 239000000758 substrate Substances 0.000 abstract 3
- 238000002347 injection Methods 0.000 abstract 2
- 239000007924 injection Substances 0.000 abstract 2
- 230000010354 integration Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
PURPOSE:To decrease a write voltage and to permit high integration with a small sized nonvolatile semiconductor memory as well by providing a different conductivity type injector region at the surface of a semiconductor region around an injection insulating film. CONSTITUTION:A source region 22 and a drain region 23 are provided on the surface of a semiconductor substrate 21. Furthermore, an injector region 24 is provided on the surface of the semiconductor substrate 21. The first gate insulating film is provided on the surface of the region 23 and the second gate insulating film is provided on the surface of the semiconductor substrate between the regions 22 and 23. And, a stray gate 26 convered with an insulating film 25 and insulated from the outside is provided on an injection insulating film 29 provided on the surface of the semiconductor by adjoining the region 23.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56045280A JPS57160164A (en) | 1981-03-27 | 1981-03-27 | Nonvolatile semiconductor memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56045280A JPS57160164A (en) | 1981-03-27 | 1981-03-27 | Nonvolatile semiconductor memory |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57160164A true JPS57160164A (en) | 1982-10-02 |
Family
ID=12714889
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56045280A Pending JPS57160164A (en) | 1981-03-27 | 1981-03-27 | Nonvolatile semiconductor memory |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57160164A (en) |
-
1981
- 1981-03-27 JP JP56045280A patent/JPS57160164A/en active Pending
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