JPS57134975A - Nonvolatile semiconductor memory - Google Patents

Nonvolatile semiconductor memory

Info

Publication number
JPS57134975A
JPS57134975A JP2110781A JP2110781A JPS57134975A JP S57134975 A JPS57134975 A JP S57134975A JP 2110781 A JP2110781 A JP 2110781A JP 2110781 A JP2110781 A JP 2110781A JP S57134975 A JPS57134975 A JP S57134975A
Authority
JP
Japan
Prior art keywords
floating gate
gate
electrode
shield electrode
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2110781A
Other languages
Japanese (ja)
Inventor
Yutaka Hayashi
Yoshikazu Kojima
Masaaki Kamiya
Kojiro Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology, Seiko Instruments Inc filed Critical Agency of Industrial Science and Technology
Priority to JP2110781A priority Critical patent/JPS57134975A/en
Publication of JPS57134975A publication Critical patent/JPS57134975A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To form a nonvolatile semiconductor memory for low-voltage writing- in with less time variation, by providing a shield electrode on a floating gate. CONSTITUTION:An N<+> source region 2 and a drain region 3 are formed on a P type silicon substrate 1. A floating gate 5 is arranged on the first gate of an oxide film 6. The drain region 3 works also as a control gate region to control the potential of the floating gate 5 by capacitance coupling. A shield electrode 20 is provided on the floating gate 5 via an insulating film 11. A passivation film 12 is arranged on it. The shield electrode 20 is connected to a source electrode 9a or a drain electrode 9b. It is set to the same potential with other electrodes. A memory excellent in stability can be realized without receiving ambient influence. The minimum write-in voltage for the memory can be lowered.
JP2110781A 1981-02-16 1981-02-16 Nonvolatile semiconductor memory Pending JPS57134975A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2110781A JPS57134975A (en) 1981-02-16 1981-02-16 Nonvolatile semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2110781A JPS57134975A (en) 1981-02-16 1981-02-16 Nonvolatile semiconductor memory

Publications (1)

Publication Number Publication Date
JPS57134975A true JPS57134975A (en) 1982-08-20

Family

ID=12045647

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2110781A Pending JPS57134975A (en) 1981-02-16 1981-02-16 Nonvolatile semiconductor memory

Country Status (1)

Country Link
JP (1) JPS57134975A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02256276A (en) * 1988-09-01 1990-10-17 Atomel Corp Semiconductor charge accumulation structure
US5172196A (en) * 1984-11-26 1992-12-15 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
US5867429A (en) * 1997-11-19 1999-02-02 Sandisk Corporation High density non-volatile flash memory without adverse effects of electric field coupling between adjacent floating gates
US7002830B2 (en) 1990-07-12 2006-02-21 Renesas Technology Corp. Semiconductor integrated circuit device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5172196A (en) * 1984-11-26 1992-12-15 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
JPH02256276A (en) * 1988-09-01 1990-10-17 Atomel Corp Semiconductor charge accumulation structure
US7002830B2 (en) 1990-07-12 2006-02-21 Renesas Technology Corp. Semiconductor integrated circuit device
US7212425B2 (en) 1990-07-12 2007-05-01 Renesas Technology Corp. Semiconductor integrated circuit device
US7336535B2 (en) 1990-07-12 2008-02-26 Renesas Technology Corp. Semiconductor integrated circuit device
US5867429A (en) * 1997-11-19 1999-02-02 Sandisk Corporation High density non-volatile flash memory without adverse effects of electric field coupling between adjacent floating gates

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