JPS647397A - Nonvolatile semiconductor memory - Google Patents

Nonvolatile semiconductor memory

Info

Publication number
JPS647397A
JPS647397A JP16302387A JP16302387A JPS647397A JP S647397 A JPS647397 A JP S647397A JP 16302387 A JP16302387 A JP 16302387A JP 16302387 A JP16302387 A JP 16302387A JP S647397 A JPS647397 A JP S647397A
Authority
JP
Japan
Prior art keywords
contact
mosfet
series
write voltage
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16302387A
Other languages
Japanese (ja)
Other versions
JP2537236B2 (en
Inventor
Hiroshi Iwahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP16302387A priority Critical patent/JP2537236B2/en
Priority to US07/212,649 priority patent/US5008856A/en
Priority to KR1019880007892A priority patent/KR910005973B1/en
Priority to EP88110377A priority patent/EP0297540B1/en
Priority to DE3855735T priority patent/DE3855735T2/en
Priority to EP93102408A priority patent/EP0551926B1/en
Priority to DE3855736T priority patent/DE3855736T2/en
Priority to DE3851479T priority patent/DE3851479T2/en
Priority to EP93102423A priority patent/EP0545904B1/en
Publication of JPS647397A publication Critical patent/JPS647397A/en
Priority to US07/685,650 priority patent/US5148394A/en
Priority to US07/913,451 priority patent/US5270969A/en
Priority to US08/288,219 priority patent/US5448517A/en
Priority to US08/433,072 priority patent/US5517449A/en
Priority to US08/433,071 priority patent/US5596525A/en
Application granted granted Critical
Publication of JP2537236B2 publication Critical patent/JP2537236B2/en
Priority to US08/731,914 priority patent/US5745413A/en
Priority to US08/848,226 priority patent/US5877981A/en
Priority to US08/848,227 priority patent/US5877982A/en
Priority to US08/901,660 priority patent/US6058051A/en
Priority to US09/261,458 priority patent/US6269021B1/en
Priority to US09/276,802 priority patent/US6011747A/en
Priority to US09/306,424 priority patent/US6061271A/en
Priority to US09/306,426 priority patent/US6021073A/en
Priority to US09/305,479 priority patent/US6072748A/en
Priority to US09/550,791 priority patent/US6178116B1/en
Priority to US09/699,632 priority patent/US6549462B1/en
Priority to US10/052,742 priority patent/US6545913B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Read Only Memory (AREA)

Abstract

PURPOSE:To make a chip size small by connecting plural memory cells each comprising a MOSFET of floating gate structure in series so as to have only to provide one contact to >=2 cells thereby decreasing the number of contacts. CONSTITUTION:A memory cell comprising a MOSFET having a floating gate and a control gate consists of a circuit 10 where 4 cell elements MC1-MC4 are connected in series. Through the constitution above, the drain of the element 1 is connected to a high voltage write voltage VP via an enhancement MOSFET 11 for write voltage application and the source of the element 4 is connected to the earth at 0V. A voltage Vdata in response to a write voltage is applied to the gate of the FET11 and selection voltages VG1-VG4 are applied to the control gate of the four elements MC1-MC4 respectively. Thus, one contact is enough to the series circuit 10 to reduce the area of the contact in case of large capacity manufacture.
JP16302387A 1987-06-29 1987-06-30 Non-volatile semiconductor memory Expired - Lifetime JP2537236B2 (en)

Priority Applications (26)

Application Number Priority Date Filing Date Title
JP16302387A JP2537236B2 (en) 1987-06-30 1987-06-30 Non-volatile semiconductor memory
US07/212,649 US5008856A (en) 1987-06-29 1988-06-28 Electrically programmable nonvolatile semiconductor memory device with NAND cell structure
DE3851479T DE3851479T2 (en) 1987-06-29 1988-06-29 Memory cell of a non-volatile semiconductor memory device.
DE3855735T DE3855735T2 (en) 1987-06-29 1988-06-29 Non-volatile semiconductor memory device
EP93102408A EP0551926B1 (en) 1987-06-29 1988-06-29 Nonvolatile semiconductor memory device
DE3855736T DE3855736T2 (en) 1987-06-29 1988-06-29 Non-volatile semiconductor memory device
KR1019880007892A KR910005973B1 (en) 1987-06-29 1988-06-29 Non-volatilization semiconductor memory device
EP93102423A EP0545904B1 (en) 1987-06-29 1988-06-29 Nonvolatile semiconductor memory device
EP88110377A EP0297540B1 (en) 1987-06-29 1988-06-29 Memory cell of nonvolatile semiconductor memory device
US07/685,650 US5148394A (en) 1987-06-29 1991-04-16 Electrically programmable nonvolatile semiconductor memory device with nand cell structure
US07/913,451 US5270969A (en) 1987-06-29 1992-07-15 Electrically programmable nonvolatile semiconductor memory device with nand cell structure
US08/288,219 US5448517A (en) 1987-06-29 1994-08-09 Electrically programmable nonvolatile semiconductor memory device with NAND cell structure
US08/433,072 US5517449A (en) 1987-06-29 1995-05-03 Memory cell of nonvolatile semiconductor memory device
US08/433,071 US5596525A (en) 1987-06-29 1995-05-03 Memory cell of nonvolatile semiconductor memory device
US08/731,914 US5745413A (en) 1987-06-29 1996-10-22 Electrically programmable nonvolatile semiconductor memory device with NAND cell structure
US08/848,227 US5877982A (en) 1987-06-29 1997-04-29 Semiconductor memory device including circuitry for selecting a block in both read and write modes
US08/848,226 US5877981A (en) 1987-06-29 1997-04-29 Nonvolatile semiconductor memory device having a matrix of memory cells
US08/901,660 US6058051A (en) 1987-06-29 1997-07-28 Memory cell of non-volatile semiconductor memory device
US09/261,458 US6269021B1 (en) 1987-06-29 1999-02-26 Memory cell of nonvolatile semiconductor memory device
US09/276,802 US6011747A (en) 1987-06-29 1999-03-26 Memory cell of non-volatile semiconductor memory device
US09/306,424 US6061271A (en) 1987-06-29 1999-05-06 Memory cell of nonvolatile semiconductor memory device
US09/305,479 US6072748A (en) 1987-06-29 1999-05-06 Memory cell of nonvolatile semiconductor memory device
US09/306,426 US6021073A (en) 1987-06-29 1999-05-06 Memory cell of non-volatile semiconductor memory device
US09/550,791 US6178116B1 (en) 1987-06-29 2000-04-17 Memory cell of non-volatile semiconductor memory device
US09/699,632 US6549462B1 (en) 1987-06-29 2000-10-31 Memory cell of nonvolatile semiconductor memory device
US10/052,742 US6545913B2 (en) 1987-06-29 2002-01-23 Memory cell of nonvolatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16302387A JP2537236B2 (en) 1987-06-30 1987-06-30 Non-volatile semiconductor memory

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP11574995A Division JP2633817B2 (en) 1995-05-15 1995-05-15 Non-volatile semiconductor memory

Publications (2)

Publication Number Publication Date
JPS647397A true JPS647397A (en) 1989-01-11
JP2537236B2 JP2537236B2 (en) 1996-09-25

Family

ID=15765716

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16302387A Expired - Lifetime JP2537236B2 (en) 1987-06-29 1987-06-30 Non-volatile semiconductor memory

Country Status (1)

Country Link
JP (1) JP2537236B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02210396A (en) * 1989-11-28 1990-08-21 Yamaha Corp Automatic musical performance device of electronic musical instrument
JPH05120892A (en) * 1991-10-25 1993-05-18 Nec Kyushu Ltd Memory integrated circuit
US5511022A (en) * 1988-12-15 1996-04-23 Samsung Electronics Co., Ltd. Depletion mode NAND string electrically erasable programmable semiconductor memory device and method for erasing and programming thereof

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4993140B2 (en) 2008-10-21 2012-08-08 Ｓｍｃ株式会社 Fluid pressure equipment with low sliding packing

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5771587U (en) * 1980-10-20 1982-05-01

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5771587U (en) * 1980-10-20 1982-05-01

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5511022A (en) * 1988-12-15 1996-04-23 Samsung Electronics Co., Ltd. Depletion mode NAND string electrically erasable programmable semiconductor memory device and method for erasing and programming thereof
JPH02210396A (en) * 1989-11-28 1990-08-21 Yamaha Corp Automatic musical performance device of electronic musical instrument
JPH05120892A (en) * 1991-10-25 1993-05-18 Nec Kyushu Ltd Memory integrated circuit

Also Published As

Publication number Publication date
JP2537236B2 (en) 1996-09-25

Similar Documents

Publication Publication Date Title
JPS648593A (en) Semiconductor storage device
KR100260281B1 (en) Non-volatile sram
KR950002049A (en) Semiconductor memory
JPS5771574A (en) Siemconductor memory circuit
KR950704789A (en) MEMORY ARRAY WITH FIELD OXIDE ISLANDS ELIMINATED AND METHOD
EP0936622A3 (en) Magnetic memory devices having multiple magnetic tunnel junctions therein
KR890016573A (en) Semiconductor memory device
JPS5771587A (en) Semiconductor storing device
KR910006996A (en) Non-volatile memory array
JPS6478023A (en) Programmable logic device
GB1535615A (en) Semiconductor devices
KR890001099A (en) Semiconductor memory
KR920022304A (en) Transistor Shell Flash Memory Array with Overwrite Protection
KR860008559A (en) Semiconductor memory
EP0377839A3 (en) Semiconductor memory device capable of preventing data of non-selected memory cell from being degraded
FR2375692A1 (en) Electrically programmable semiconductor storage matrix - has devices applying high and low voltages to selected row and column lines of matrix
AU597610B2 (en) An electrically alterable non-volatile memory device
KR920017118A (en) Nonvolatile Semiconductor Memory
JPS5718356A (en) Semiconductor memory storage
JPS647397A (en) Nonvolatile semiconductor memory
EP0317323A3 (en) Programmable semiconductor memory
JPS54148442A (en) Memory unit
JPS5562588A (en) Semiconductor memory circuit
JPS55101191A (en) Static random access memory cell circuit
EP0274828A1 (en) Memory matrix

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term