JPS5758358A - Charge transfer device - Google Patents

Charge transfer device

Info

Publication number
JPS5758358A
JPS5758358A JP13356880A JP13356880A JPS5758358A JP S5758358 A JPS5758358 A JP S5758358A JP 13356880 A JP13356880 A JP 13356880A JP 13356880 A JP13356880 A JP 13356880A JP S5758358 A JPS5758358 A JP S5758358A
Authority
JP
Japan
Prior art keywords
electrode
diffusion layer
buried channel
parts
end parts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13356880A
Other languages
Japanese (ja)
Other versions
JPS6125224B2 (en
Inventor
Tetsuo Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP13356880A priority Critical patent/JPS5758358A/en
Publication of JPS5758358A publication Critical patent/JPS5758358A/en
Publication of JPS6125224B2 publication Critical patent/JPS6125224B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76816—Output structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To contrive to enhance sharply sensitivity of an output circuit of a charge transfer device by a method wherein a floating diffusion layer is so provided in a substrate as both the end sides thereof are separated from the end parts of an output barrier electrode and a reset electrode. CONSTITUTION:The maximum potential level 102 is formed in a buried channel layer 40 when the prescribed bias voltage is applied to the output barrier electrode 35. And the maximum potential level 103 is formed in the buried channel layer 40 at the lower part of the reset electrode 36 in the closed condition of the electrode 36. The inclination of potentials 104, 105 show the inclination of potentials at the parts of the buried channel region between the floating diffusion layer 42 and the electrodes 35, 36. By making both the end parts of the diffusion layer 42 wherein signal charge is to be stored to be separated at the prescribed distances from the end parts of the electrodes 35, 36, MOS type electrostatic capacitaneces COG, CRS between those parts can be reduced remarkably.
JP13356880A 1980-09-25 1980-09-25 Charge transfer device Granted JPS5758358A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13356880A JPS5758358A (en) 1980-09-25 1980-09-25 Charge transfer device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13356880A JPS5758358A (en) 1980-09-25 1980-09-25 Charge transfer device

Publications (2)

Publication Number Publication Date
JPS5758358A true JPS5758358A (en) 1982-04-08
JPS6125224B2 JPS6125224B2 (en) 1986-06-14

Family

ID=15107844

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13356880A Granted JPS5758358A (en) 1980-09-25 1980-09-25 Charge transfer device

Country Status (1)

Country Link
JP (1) JPS5758358A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60137454U (en) * 1984-02-23 1985-09-11 ソニー株式会社 signal readout device
JPS61198676A (en) * 1985-02-27 1986-09-03 Nec Corp Semiconductor integrated circuit device
KR100265750B1 (en) * 1992-07-10 2000-10-02 윤종용 Charge coupled device
US7880259B2 (en) 2004-09-07 2011-02-01 Sanyo Electric Co., Ltd. Solid-state image sensor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60137454U (en) * 1984-02-23 1985-09-11 ソニー株式会社 signal readout device
JPS61198676A (en) * 1985-02-27 1986-09-03 Nec Corp Semiconductor integrated circuit device
JPH055179B2 (en) * 1985-02-27 1993-01-21 Nippon Electric Co
KR100265750B1 (en) * 1992-07-10 2000-10-02 윤종용 Charge coupled device
US7880259B2 (en) 2004-09-07 2011-02-01 Sanyo Electric Co., Ltd. Solid-state image sensor

Also Published As

Publication number Publication date
JPS6125224B2 (en) 1986-06-14

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