JPS5750386A - Semiconductor storage circuit - Google Patents

Semiconductor storage circuit

Info

Publication number
JPS5750386A
JPS5750386A JP55125468A JP12546880A JPS5750386A JP S5750386 A JPS5750386 A JP S5750386A JP 55125468 A JP55125468 A JP 55125468A JP 12546880 A JP12546880 A JP 12546880A JP S5750386 A JPS5750386 A JP S5750386A
Authority
JP
Japan
Prior art keywords
potential
mos
contact
elements
detecting amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55125468A
Other languages
Japanese (ja)
Other versions
JPS644278B2 (en
Inventor
Kazuhiro Tada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP55125468A priority Critical patent/JPS5750386A/en
Publication of JPS5750386A publication Critical patent/JPS5750386A/en
Publication of JPS644278B2 publication Critical patent/JPS644278B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating

Abstract

PURPOSE:To eliminate the dependence of power supply voltage of the initial amplification speed, by connecting two pairs of MOS elements in series between a common contact of a balanced flip-flop of a bit information detecting amplifier and the earth and then adjusting the lowering speed of potential at the common contact. CONSTITUTION:An MOS element Q405 smaller than an MOS element Q407 of the other side and a depletion type MOS element Q406 are connected in series to one side of a common contact N401 of a balanced FF that is formed with MOS elements Q403 and Q404 of a bit information detecting amplifier. The lowering speed of potential of the contact 401 during the initial amplification by the elements Q405 and Q406 depends on the current capacity of the element Q406 having the gate input of earth potential. Accordingly the difference of potentials between the gate and the source of the element Q406 becomes constant according to the size of the element Q406. Then the potential of the contact N401 lowers in a constant speed regardless of the power supply voltage to obtain an optimum detecting amplifier. At the same time, the voltage drop can be prevented also for a bit wire B401 or B402 which is set at 1.
JP55125468A 1980-09-10 1980-09-10 Semiconductor storage circuit Granted JPS5750386A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55125468A JPS5750386A (en) 1980-09-10 1980-09-10 Semiconductor storage circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55125468A JPS5750386A (en) 1980-09-10 1980-09-10 Semiconductor storage circuit

Publications (2)

Publication Number Publication Date
JPS5750386A true JPS5750386A (en) 1982-03-24
JPS644278B2 JPS644278B2 (en) 1989-01-25

Family

ID=14910828

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55125468A Granted JPS5750386A (en) 1980-09-10 1980-09-10 Semiconductor storage circuit

Country Status (1)

Country Link
JP (1) JPS5750386A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6246486A (en) * 1985-08-23 1987-02-28 Hitachi Ltd Dynamic ram
JPH03198285A (en) * 1989-12-26 1991-08-29 Sharp Corp Read circuit for semiconductor storage device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5297639A (en) * 1976-02-12 1977-08-16 Matsushita Electric Ind Co Ltd Amplifier circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5297639A (en) * 1976-02-12 1977-08-16 Matsushita Electric Ind Co Ltd Amplifier circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6246486A (en) * 1985-08-23 1987-02-28 Hitachi Ltd Dynamic ram
JPH03198285A (en) * 1989-12-26 1991-08-29 Sharp Corp Read circuit for semiconductor storage device

Also Published As

Publication number Publication date
JPS644278B2 (en) 1989-01-25

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