JPS57162181A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS57162181A
JPS57162181A JP56047421A JP4742181A JPS57162181A JP S57162181 A JPS57162181 A JP S57162181A JP 56047421 A JP56047421 A JP 56047421A JP 4742181 A JP4742181 A JP 4742181A JP S57162181 A JPS57162181 A JP S57162181A
Authority
JP
Japan
Prior art keywords
limiting means
current limiting
power source
electric power
memory device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56047421A
Other languages
Japanese (ja)
Other versions
JPH0241110B2 (en
Inventor
Setsuo Kurafuji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56047421A priority Critical patent/JPS57162181A/en
Publication of JPS57162181A publication Critical patent/JPS57162181A/en
Publication of JPH0241110B2 publication Critical patent/JPH0241110B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To produce a static type random access memory (RAM) of which power consumption does not exceed at a prescribed temperature or over and even if the memory is used under the condition of high temperature by providing a current limiting means between an electric power source and load resistance. CONSTITUTION:A current limiting means CL is provided between an electric power source Vcc and load resistances R1, R2 of a semiconductor memory device provided with a pair of transistors Q1, Q2 each gate of which is connected to the drain of the other transistor each other and a memory cell MC with load resistances R1, R2 connected between the drain and the electric power source Vcc. For example, a current limiting means CL using the saturated area of a depletion transistor Q7 whose gate is connected to the electric power source as an current limiter is provided. It is unnecessary to add the current limiting means CL to each cell and a common current limiting means may be used for all the cells.
JP56047421A 1981-03-31 1981-03-31 Semiconductor memory device Granted JPS57162181A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56047421A JPS57162181A (en) 1981-03-31 1981-03-31 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56047421A JPS57162181A (en) 1981-03-31 1981-03-31 Semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS57162181A true JPS57162181A (en) 1982-10-05
JPH0241110B2 JPH0241110B2 (en) 1990-09-14

Family

ID=12774684

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56047421A Granted JPS57162181A (en) 1981-03-31 1981-03-31 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS57162181A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5856288A (en) * 1981-09-28 1983-04-02 Toshiba Corp Semiconductor integrated circuit
JPS5898895A (en) * 1981-12-08 1983-06-11 Toshiba Corp Semiconductor integrated circuit
JPH04132080A (en) * 1990-09-19 1992-05-06 Samsung Electron Co Ltd Electric current adjustment circuit for static ram

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5799765A (en) * 1980-12-12 1982-06-21 Fujitsu Ltd Semiconductor resistance element

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5799765A (en) * 1980-12-12 1982-06-21 Fujitsu Ltd Semiconductor resistance element

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5856288A (en) * 1981-09-28 1983-04-02 Toshiba Corp Semiconductor integrated circuit
JPS5898895A (en) * 1981-12-08 1983-06-11 Toshiba Corp Semiconductor integrated circuit
JPH0310196B2 (en) * 1981-12-08 1991-02-13 Tokyo Shibaura Electric Co
JPH04132080A (en) * 1990-09-19 1992-05-06 Samsung Electron Co Ltd Electric current adjustment circuit for static ram

Also Published As

Publication number Publication date
JPH0241110B2 (en) 1990-09-14

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