JPS5484934A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS5484934A
JPS5484934A JP15236877A JP15236877A JPS5484934A JP S5484934 A JPS5484934 A JP S5484934A JP 15236877 A JP15236877 A JP 15236877A JP 15236877 A JP15236877 A JP 15236877A JP S5484934 A JPS5484934 A JP S5484934A
Authority
JP
Japan
Prior art keywords
source electrode
junction
transfer gate
drain electrode
memory device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15236877A
Other languages
Japanese (ja)
Other versions
JPS58119B2 (en
Inventor
Kazukiyo Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP52152368A priority Critical patent/JPS58119B2/en
Publication of JPS5484934A publication Critical patent/JPS5484934A/en
Publication of JPS58119B2 publication Critical patent/JPS58119B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To reduce the access time remarkably, by the internal connection of high concentration pn junction to the source electrode of the transfer gate and that of low concentration pn junction to the drain electrode. CONSTITUTION:The transfer gate 50 i of DSAMOS transistor Tr, and the drain electrode 13 is connected to the information line 4, the source electrode 14 is to the work line 5, and the source electrode 15 is to the memory element 21 respectively. In this DSAMOS Tr, the high concentration pn junctin is internally connected to the source electrode but the low concentration pn junction is to the drain electrode. Thus, even if a number of memory cells are connected to the information line 4, the capcitance added with the transfer gate is less and the access time can remarkably be reduced.
JP52152368A 1977-12-20 1977-12-20 semiconductor storage device Expired JPS58119B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52152368A JPS58119B2 (en) 1977-12-20 1977-12-20 semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52152368A JPS58119B2 (en) 1977-12-20 1977-12-20 semiconductor storage device

Publications (2)

Publication Number Publication Date
JPS5484934A true JPS5484934A (en) 1979-07-06
JPS58119B2 JPS58119B2 (en) 1983-01-05

Family

ID=15538990

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52152368A Expired JPS58119B2 (en) 1977-12-20 1977-12-20 semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS58119B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6054730A (en) * 1997-01-08 2000-04-25 Kabushiki Kaisha Toshiba Semiconductor device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6166008A (en) * 1984-09-07 1986-04-04 Dowa:Kk Bad smell preventing method and device upon extinguishing fire in evaporating burner
JPH029256Y2 (en) * 1984-12-12 1990-03-07

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5291622A (en) * 1976-01-28 1977-08-02 Nec Corp Static memory cell

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5291622A (en) * 1976-01-28 1977-08-02 Nec Corp Static memory cell

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6054730A (en) * 1997-01-08 2000-04-25 Kabushiki Kaisha Toshiba Semiconductor device

Also Published As

Publication number Publication date
JPS58119B2 (en) 1983-01-05

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