JPS5291622A - Static memory cell - Google Patents

Static memory cell

Info

Publication number
JPS5291622A
JPS5291622A JP821676A JP821676A JPS5291622A JP S5291622 A JPS5291622 A JP S5291622A JP 821676 A JP821676 A JP 821676A JP 821676 A JP821676 A JP 821676A JP S5291622 A JPS5291622 A JP S5291622A
Authority
JP
Japan
Prior art keywords
memory cell
static memory
cell
constitute
reduce
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP821676A
Other languages
Japanese (ja)
Other versions
JPS5856197B2 (en
Inventor
Shunichi Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP51008216A priority Critical patent/JPS5856197B2/en
Publication of JPS5291622A publication Critical patent/JPS5291622A/en
Publication of JPS5856197B2 publication Critical patent/JPS5856197B2/en
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/402Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To constitute a cell with a small-sized low power consumption active device to reduce the holding current.
JP51008216A 1976-01-28 1976-01-28 static memory cell Expired JPS5856197B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51008216A JPS5856197B2 (en) 1976-01-28 1976-01-28 static memory cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51008216A JPS5856197B2 (en) 1976-01-28 1976-01-28 static memory cell

Publications (2)

Publication Number Publication Date
JPS5291622A true JPS5291622A (en) 1977-08-02
JPS5856197B2 JPS5856197B2 (en) 1983-12-13

Family

ID=11687018

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51008216A Expired JPS5856197B2 (en) 1976-01-28 1976-01-28 static memory cell

Country Status (1)

Country Link
JP (1) JPS5856197B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5484933A (en) * 1977-12-20 1979-07-06 Agency Of Ind Science & Technol Semiconductor memory device
JPS5484934A (en) * 1977-12-20 1979-07-06 Agency Of Ind Science & Technol Semiconductor memory device
JPS54109729A (en) * 1978-02-16 1979-08-28 Nec Corp Memory circuit

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5484933A (en) * 1977-12-20 1979-07-06 Agency Of Ind Science & Technol Semiconductor memory device
JPS5484934A (en) * 1977-12-20 1979-07-06 Agency Of Ind Science & Technol Semiconductor memory device
JPS58118B2 (en) * 1977-12-20 1983-01-05 工業技術院長 semiconductor storage device
JPS58119B2 (en) * 1977-12-20 1983-01-05 工業技術院長 semiconductor storage device
JPS54109729A (en) * 1978-02-16 1979-08-28 Nec Corp Memory circuit
JPS6240792B2 (en) * 1978-02-16 1987-08-31 Nippon Electric Co

Also Published As

Publication number Publication date
JPS5856197B2 (en) 1983-12-13

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