JPS52154313A - Semiconductor memory - Google Patents

Semiconductor memory

Info

Publication number
JPS52154313A
JPS52154313A JP7107676A JP7107676A JPS52154313A JP S52154313 A JPS52154313 A JP S52154313A JP 7107676 A JP7107676 A JP 7107676A JP 7107676 A JP7107676 A JP 7107676A JP S52154313 A JPS52154313 A JP S52154313A
Authority
JP
Japan
Prior art keywords
semiconductor memory
memory
inverted
achieve
reading time
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7107676A
Other languages
Japanese (ja)
Inventor
Masao Mizukami
Yoshio Tominaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7107676A priority Critical patent/JPS52154313A/en
Publication of JPS52154313A publication Critical patent/JPS52154313A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)

Abstract

PURPOSE:To achieve a memory cell through which the memory information is not inverted at the reading time.
JP7107676A 1976-06-18 1976-06-18 Semiconductor memory Pending JPS52154313A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7107676A JPS52154313A (en) 1976-06-18 1976-06-18 Semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7107676A JPS52154313A (en) 1976-06-18 1976-06-18 Semiconductor memory

Publications (1)

Publication Number Publication Date
JPS52154313A true JPS52154313A (en) 1977-12-22

Family

ID=13450060

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7107676A Pending JPS52154313A (en) 1976-06-18 1976-06-18 Semiconductor memory

Country Status (1)

Country Link
JP (1) JPS52154313A (en)

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