JPS5375829A - Semiconductor memory cell - Google Patents

Semiconductor memory cell

Info

Publication number
JPS5375829A
JPS5375829A JP15094476A JP15094476A JPS5375829A JP S5375829 A JPS5375829 A JP S5375829A JP 15094476 A JP15094476 A JP 15094476A JP 15094476 A JP15094476 A JP 15094476A JP S5375829 A JPS5375829 A JP S5375829A
Authority
JP
Japan
Prior art keywords
memory cell
semiconductor memory
cell
current
power consumption
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15094476A
Other languages
Japanese (ja)
Other versions
JPS5931799B2 (en
Inventor
Noriyuki Honma
Kunihiko Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP51150944A priority Critical patent/JPS5931799B2/en
Publication of JPS5375829A publication Critical patent/JPS5375829A/en
Publication of JPS5931799B2 publication Critical patent/JPS5931799B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL

Abstract

PURPOSE:To achieve such memory cell that the cell potential difference is not reduced so much even in the transient state under which the cell current changes from a small holding current to a large reading current, and thus to obtain a memory cell which features a low power consumption and a high speed.
JP51150944A 1976-12-17 1976-12-17 semiconductor memory cell Expired JPS5931799B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51150944A JPS5931799B2 (en) 1976-12-17 1976-12-17 semiconductor memory cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51150944A JPS5931799B2 (en) 1976-12-17 1976-12-17 semiconductor memory cell

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP58236193A Division JPS59151390A (en) 1983-12-16 1983-12-16 Semiconductor storage cell

Publications (2)

Publication Number Publication Date
JPS5375829A true JPS5375829A (en) 1978-07-05
JPS5931799B2 JPS5931799B2 (en) 1984-08-04

Family

ID=15507819

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51150944A Expired JPS5931799B2 (en) 1976-12-17 1976-12-17 semiconductor memory cell

Country Status (1)

Country Link
JP (1) JPS5931799B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60168221U (en) * 1984-04-18 1985-11-08 パイオニア株式会社 keyboard switch unit

Also Published As

Publication number Publication date
JPS5931799B2 (en) 1984-08-04

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