JPS52107786A - Integrating circuit - Google Patents

Integrating circuit

Info

Publication number
JPS52107786A
JPS52107786A JP2479176A JP2479176A JPS52107786A JP S52107786 A JPS52107786 A JP S52107786A JP 2479176 A JP2479176 A JP 2479176A JP 2479176 A JP2479176 A JP 2479176A JP S52107786 A JPS52107786 A JP S52107786A
Authority
JP
Japan
Prior art keywords
capacity
integrating circuit
capacity element
procided
pilling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2479176A
Other languages
Japanese (ja)
Other versions
JPS604595B2 (en
Inventor
Toshio Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP51024791A priority Critical patent/JPS604595B2/en
Publication of JPS52107786A publication Critical patent/JPS52107786A/en
Publication of JPS604595B2 publication Critical patent/JPS604595B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To obtain the memory cell consisting of high efficient capacity element and MIS transistor by constructing capacity element with adding the capacity of PN junction between double impurity loading areas procided on the semiconductor surface of capacity element to the capacity between the second opposite conductivity type area and electrode, and pilling every capacity up vertically against the surface.
JP51024791A 1976-03-08 1976-03-08 integrated circuit Expired JPS604595B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51024791A JPS604595B2 (en) 1976-03-08 1976-03-08 integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51024791A JPS604595B2 (en) 1976-03-08 1976-03-08 integrated circuit

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP56170618A Division JPS57141954A (en) 1981-10-23 1981-10-23 Manufacture of integrated circuit
JP56170619A Division JPS57141955A (en) 1981-10-23 1981-10-23 Integrated circuit device

Publications (2)

Publication Number Publication Date
JPS52107786A true JPS52107786A (en) 1977-09-09
JPS604595B2 JPS604595B2 (en) 1985-02-05

Family

ID=12147997

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51024791A Expired JPS604595B2 (en) 1976-03-08 1976-03-08 integrated circuit

Country Status (1)

Country Link
JP (1) JPS604595B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5394782A (en) * 1976-12-20 1978-08-19 Texas Instruments Inc Method of producing large capacity memory cell array
JPS5936262U (en) * 1977-09-30 1984-03-07 横河・ヒユ−レツト・パツカ−ド株式会社 semiconductor memory element
JPS6323346A (en) * 1987-04-20 1988-01-30 Hitachi Ltd Semiconductor memory device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4826039A (en) * 1971-08-02 1973-04-05
JPS4827643A (en) * 1971-08-12 1973-04-12

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4826039A (en) * 1971-08-02 1973-04-05
JPS4827643A (en) * 1971-08-12 1973-04-12

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5394782A (en) * 1976-12-20 1978-08-19 Texas Instruments Inc Method of producing large capacity memory cell array
JPS5936262U (en) * 1977-09-30 1984-03-07 横河・ヒユ−レツト・パツカ−ド株式会社 semiconductor memory element
JPS6323346A (en) * 1987-04-20 1988-01-30 Hitachi Ltd Semiconductor memory device

Also Published As

Publication number Publication date
JPS604595B2 (en) 1985-02-05

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