ES404185A1 - A cellular disposal of casual access accorded by electric load. (Machine-translation by Google Translate, not legally binding) - Google Patents

A cellular disposal of casual access accorded by electric load. (Machine-translation by Google Translate, not legally binding)

Info

Publication number
ES404185A1
ES404185A1 ES404185A ES404185A ES404185A1 ES 404185 A1 ES404185 A1 ES 404185A1 ES 404185 A ES404185 A ES 404185A ES 404185 A ES404185 A ES 404185A ES 404185 A1 ES404185 A1 ES 404185A1
Authority
ES
Spain
Prior art keywords
region
semiconductor body
translation
impurity
machine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES404185A
Other languages
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of ES404185A1 publication Critical patent/ES404185A1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1062—Channel region of field-effect devices of charge coupled devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Read Only Memory (AREA)

Abstract

An accidental access memory cell arrangement coupled by electric charge comprising a semiconductor body having therein an impurity of a first type of conductivity, a first bit line region of said semiconductor body having in it an impurity of the type of opposite conductivity, a second gate region of said semiconductor body adjacent to said first region and having a predetermined threshold voltage, said second region therein having an impurity of said first type of conductivity and a concentration greater than the impurity of said semiconductor body, a third storage region of said semiconductor body adjacent to said second region and having a threshold voltage lower than said predetermined threshold voltage of said second region, and a single electrode extending in superposed relationship with said second and third regions of said semiconductor body. (Machine-translation by Google Translate, not legally binding)
ES404185A 1971-07-06 1972-06-23 A cellular disposal of casual access accorded by electric load. (Machine-translation by Google Translate, not legally binding) Expired ES404185A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15990771A 1971-07-06 1971-07-06

Publications (1)

Publication Number Publication Date
ES404185A1 true ES404185A1 (en) 1975-06-01

Family

ID=22574617

Family Applications (1)

Application Number Title Priority Date Filing Date
ES404185A Expired ES404185A1 (en) 1971-07-06 1972-06-23 A cellular disposal of casual access accorded by electric load. (Machine-translation by Google Translate, not legally binding)

Country Status (7)

Country Link
JP (1) JPS5145946B1 (en)
CA (1) CA961169A (en)
CH (1) CH548086A (en)
DE (1) DE2232756C2 (en)
ES (1) ES404185A1 (en)
FR (1) FR2144904B1 (en)
IT (1) IT956844B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3916394A (en) * 1974-12-09 1975-10-28 Honeywell Inf Systems High-speed random access memory
DE2842588A1 (en) * 1978-09-29 1980-04-17 Siemens Ag HIGHLY INTEGRATED, DYNAMIC MEMORY ELEMENT
JPS55113359A (en) * 1979-02-22 1980-09-01 Fujitsu Ltd Semiconductor integrated circuit device
JPS59140811U (en) * 1983-03-12 1984-09-20 南　猛 concrete mixer

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1329220A (en) * 1969-08-11 1973-09-05 California Inst Of Techn Stored charge device

Also Published As

Publication number Publication date
FR2144904B1 (en) 1975-09-05
DE2232756C2 (en) 1984-02-23
DE2232756A1 (en) 1973-01-18
JPS5145946B1 (en) 1976-12-06
CA961169A (en) 1975-01-14
FR2144904A1 (en) 1973-02-16
CH548086A (en) 1974-04-11
IT956844B (en) 1973-10-10

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