ES442755A1 - Doreinryoikigako oyobi teifujunbutsunodobukaranaru denkaikokatoranjisuta - Google Patents

Doreinryoikigako oyobi teifujunbutsunodobukaranaru denkaikokatoranjisuta

Info

Publication number
ES442755A1
ES442755A1 ES442755A ES442755A ES442755A1 ES 442755 A1 ES442755 A1 ES 442755A1 ES 442755 A ES442755 A ES 442755A ES 442755 A ES442755 A ES 442755A ES 442755 A1 ES442755 A1 ES 442755A1
Authority
ES
Spain
Prior art keywords
impurity
discharge
region
regions
teifujunbutsunodobukaranaru
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES442755A
Other languages
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of ES442755A1 publication Critical patent/ES442755A1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Bipolar Transistors (AREA)
  • Non-Volatile Memory (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

An improved field-effect transistor device comprising: a monocrystalline semiconductor body having a background impurity of a first type of conductivity, separate regions of feed and discharge of impurity of second type of opposite conductivity in said body and defining between they a channel region, at least said discharge region being composed of a central region having a high concentration on the surface of said second impurity, and by a peripheral region surrounding said central region of a lower concentration, of impurity ; an insulating layer on the surface of said body; feeding and discharge electrodes in ohmic contact with said central regions of said feed and discharge regions and a gate electrode on said channel region. (Machine-translation by Google Translate, not legally binding)
ES442755A 1974-12-06 1975-11-18 Doreinryoikigako oyobi teifujunbutsunodobukaranaru denkaikokatoranjisuta Expired ES442755A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US53024974A 1974-12-06 1974-12-06

Publications (1)

Publication Number Publication Date
ES442755A1 true ES442755A1 (en) 1977-04-01

Family

ID=24112972

Family Applications (1)

Application Number Title Priority Date Filing Date
ES442755A Expired ES442755A1 (en) 1974-12-06 1975-11-18 Doreinryoikigako oyobi teifujunbutsunodobukaranaru denkaikokatoranjisuta

Country Status (9)

Country Link
JP (1) JPS5168776A (en)
BE (1) BE835288A (en)
BR (1) BR7508781A (en)
CH (1) CH591764A5 (en)
DE (1) DE2545871B2 (en)
ES (1) ES442755A1 (en)
FR (1) FR2293795A1 (en)
NL (1) NL7513901A (en)
SE (1) SE7513554L (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS559477A (en) * 1978-07-06 1980-01-23 Nec Corp Method of making semiconductor device
JPS5646561A (en) * 1979-09-26 1981-04-27 Nec Corp Semiconductor device
JPS5685867A (en) * 1979-12-14 1981-07-13 Nec Corp Field effect semiconductor device
JPS57155771A (en) * 1981-03-23 1982-09-25 Hitachi Ltd Semiconductor integrated circuit device
JPH0646662B2 (en) * 1983-12-26 1994-06-15 株式会社日立製作所 Semiconductor device
JPS6114765A (en) * 1984-06-29 1986-01-22 Shindengen Electric Mfg Co Ltd Insulated gate field effect transistor
JPS60121771A (en) * 1984-11-09 1985-06-29 Hitachi Ltd Semiconductor device
JPS61170065A (en) * 1985-01-23 1986-07-31 Fuji Electric Co Ltd Insulated gate type field-effect transistor
JPS61105872A (en) * 1985-10-04 1986-05-23 Hitachi Ltd Semiconductor device
US4786955A (en) * 1987-02-24 1988-11-22 General Electric Company Semiconductor device with source and drain depth extenders and a method of making the same
DE3818533C2 (en) * 1987-06-01 1994-05-26 Mitsubishi Electric Corp Field effect transistor
JPH0294477A (en) * 1988-09-30 1990-04-05 Toshiba Corp Semiconductor device and manufacture thereof
DE19706282A1 (en) * 1997-02-18 1998-08-20 Siemens Ag Transistor having zones of different dopant concentration
JP4541582B2 (en) * 2001-03-28 2010-09-08 セイコーインスツル株式会社 Manufacturing method of semiconductor device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49105490A (en) * 1973-02-07 1974-10-05

Also Published As

Publication number Publication date
BR7508781A (en) 1976-08-24
BE835288A (en) 1976-03-01
FR2293795B1 (en) 1978-05-12
DE2545871A1 (en) 1976-06-10
SE7513554L (en) 1976-06-08
NL7513901A (en) 1976-06-09
DE2545871C3 (en) 1983-03-03
FR2293795A1 (en) 1976-07-02
DE2545871B2 (en) 1980-06-19
CH591764A5 (en) 1977-09-30
JPS5168776A (en) 1976-06-14

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