GB1037850A - Improvements in or relating to semiconductor devices - Google Patents
Improvements in or relating to semiconductor devicesInfo
- Publication number
- GB1037850A GB1037850A GB5223364A GB5223364A GB1037850A GB 1037850 A GB1037850 A GB 1037850A GB 5223364 A GB5223364 A GB 5223364A GB 5223364 A GB5223364 A GB 5223364A GB 1037850 A GB1037850 A GB 1037850A
- Authority
- GB
- United Kingdom
- Prior art keywords
- regions
- spaced
- gap
- type
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 230000005669 field effect Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
1,037,850. Transistors. ASSOCIATED SEMICONDUCTOR MANUFACTURERS Ltd. Dec. 23, 1964, No. 52233/64. Heading H1K. A transistor device comprises a high resistivity semi-conductor body of one conductivity type with two spaced surface regions of low resistivity opposite type, a dielectric layer bearing two spaced conductive layers 8, 9 overlying the space between the two regions. The arrangement provides a field effect transistor with two gate electrodes the second of which acts as a screen gate and reduces the output capacitance. In an embodiment, a boron doped 12 ohm/cm. P-type silicon body is covered with an oxide layer by heating in wet nitrogen, and phosphorus is diffused in a photolithographic process to provide two N + regions 2, 3 spaced 20 Á apart. Aluminium is evaporated on to provide the contacts, the gate contacts 8, 9 being etched to provide a separating gap of 1 Á. In a modification a further N + region is provided under the gap between the two gate electrodes and the dielectric layer may also comprise a gap over this region. This arrangement operates in the enhancement mode; a thin N-type layer may be provided between the two N+ regions permitting operation in the depletion mode. Linear or circular and annular geometry may be used for the device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB5223364A GB1037850A (en) | 1964-12-23 | 1964-12-23 | Improvements in or relating to semiconductor devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB5223364A GB1037850A (en) | 1964-12-23 | 1964-12-23 | Improvements in or relating to semiconductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1037850A true GB1037850A (en) | 1966-08-03 |
Family
ID=10463132
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB5223364A Expired GB1037850A (en) | 1964-12-23 | 1964-12-23 | Improvements in or relating to semiconductor devices |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1037850A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3427514A (en) * | 1966-10-13 | 1969-02-11 | Rca Corp | Mos tetrode |
| US4575746A (en) * | 1983-11-28 | 1986-03-11 | Rca Corporation | Crossunders for high density SOS integrated circuits |
-
1964
- 1964-12-23 GB GB5223364A patent/GB1037850A/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3427514A (en) * | 1966-10-13 | 1969-02-11 | Rca Corp | Mos tetrode |
| US4575746A (en) * | 1983-11-28 | 1986-03-11 | Rca Corporation | Crossunders for high density SOS integrated circuits |
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