ES364523A1 - Semiconductor device (Machine-translation by Google Translate, not legally binding) - Google Patents

Semiconductor device (Machine-translation by Google Translate, not legally binding)

Info

Publication number
ES364523A1
ES364523A1 ES0364523A ES364523A ES364523A1 ES 364523 A1 ES364523 A1 ES 364523A1 ES 0364523 A ES0364523 A ES 0364523A ES 364523 A ES364523 A ES 364523A ES 364523 A1 ES364523 A1 ES 364523A1
Authority
ES
Spain
Prior art keywords
regions
conductivity type
low resistivity
surface region
translation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES0364523A
Other languages
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Priority to ES0364523A priority Critical patent/ES364523A1/en
Publication of ES364523A1 publication Critical patent/ES364523A1/en
Expired legal-status Critical Current

Links

Landscapes

  • Thin Film Transistor (AREA)

Abstract

Semiconductor device with semiconductor body or part of a conductivity type, comprising at least one isolated gate field-effect transistor provided with a first and a second region of low resistivity, spaced apart, of the opposite conductivity type that penetrate the body or part of the body from a surface thereof, a surface region in the body or part of the body located adjacent to the one surface and between the two regions of low resistivity, in which, charge carriers, characteristic of the conductivity type opposite, they may be flowed between said two regions of low resistivity, within a channel of the opposite conductive type present or formed in said surface region, a gate electrode in said one surface between the two regions of low resistivity and separated from each other. The one referred to by insulating material and electrodes in ohmic contact with the aforementioned two regions of b aja resistivity, characterized by the fact that said surface region contains a concentration of implanted ions characteristic of the conductivity type of said surface region. (Machine-translation by Google Translate, not legally binding)
ES0364523A 1969-03-08 1969-03-08 Semiconductor device (Machine-translation by Google Translate, not legally binding) Expired ES364523A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
ES0364523A ES364523A1 (en) 1969-03-08 1969-03-08 Semiconductor device (Machine-translation by Google Translate, not legally binding)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ES0364523A ES364523A1 (en) 1969-03-08 1969-03-08 Semiconductor device (Machine-translation by Google Translate, not legally binding)

Publications (1)

Publication Number Publication Date
ES364523A1 true ES364523A1 (en) 1971-03-01

Family

ID=59033113

Family Applications (1)

Application Number Title Priority Date Filing Date
ES0364523A Expired ES364523A1 (en) 1969-03-08 1969-03-08 Semiconductor device (Machine-translation by Google Translate, not legally binding)

Country Status (1)

Country Link
ES (1) ES364523A1 (en)

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