ES404386A1 - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
ES404386A1
ES404386A1 ES404386A ES404386A ES404386A1 ES 404386 A1 ES404386 A1 ES 404386A1 ES 404386 A ES404386 A ES 404386A ES 404386 A ES404386 A ES 404386A ES 404386 A1 ES404386 A1 ES 404386A1
Authority
ES
Spain
Prior art keywords
region
insulating layer
layer
junction
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES404386A
Other languages
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES404386A1 publication Critical patent/ES404386A1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8611—Planar PN junction diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

A semiconductor device comprising a semiconductor body that is covered, at least partially, by an electrically insulating layer, a first region of a first type of conductivity contiguous to said surface and a second region of the second type of conductivity equally contiguous to said surface and which is totally surrounded within the semiconductor body by the first region and forms with it a pn junction that terminates on said surface, while, in order to increase the breakdown voltage of said pn junction, a resistance layer of a high electrical resistance on the insulating layer, said layer being separated from the pn junction and being connected by electrically conductive junction to the first region and to the second region through openings located in the insulating layer, said resistance layer covering at least one part of the insulating layer between said openings, characterized in that the layer resistance is arranged in the form of an elongated strip that is connected to at least a surface part of the insulating layer. (Machine-translation by Google Translate, not legally binding)
ES404386A 1971-07-02 1972-06-30 Semiconductor devices Expired ES404386A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7109139A NL7109139A (en) 1971-07-02 1971-07-02

Publications (1)

Publication Number Publication Date
ES404386A1 true ES404386A1 (en) 1975-06-01

Family

ID=19813531

Family Applications (1)

Application Number Title Priority Date Filing Date
ES404386A Expired ES404386A1 (en) 1971-07-02 1972-06-30 Semiconductor devices

Country Status (12)

Country Link
JP (1) JPS5231154B1 (en)
AU (1) AU4397372A (en)
BE (1) BE785747A (en)
CA (1) CA963174A (en)
CH (1) CH546483A (en)
DE (1) DE2231521C2 (en)
ES (1) ES404386A1 (en)
FR (1) FR2144741B1 (en)
GB (1) GB1394086A (en)
IT (1) IT959277B (en)
NL (1) NL7109139A (en)
SE (1) SE377864B (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2011178B (en) * 1977-12-15 1982-03-17 Philips Electronic Associated Fieldeffect devices
JPS55140673A (en) * 1979-04-14 1980-11-04 Yamaha Motor Co Ltd Rear arm mount construction
DE2944937A1 (en) * 1979-11-07 1981-06-04 Siemens AG, 1000 Berlin und 8000 München SEMICONDUCTOR COMPONENT
US4947232A (en) * 1980-03-22 1990-08-07 Sharp Kabushiki Kaisha High voltage MOS transistor
JPS56169369A (en) * 1980-05-30 1981-12-26 Sharp Corp High withstand voltage mos field effect semiconductor device
JPS56169368A (en) * 1980-05-30 1981-12-26 Sharp Corp High withstand voltage mos field effect semiconductor device
DE3520599A1 (en) * 1984-06-15 1985-12-19 Rca Corp., Princeton, N.J. Semiconductor component
JPS61114574A (en) * 1984-11-09 1986-06-02 Hitachi Ltd Semiconductor device
JP2615151B2 (en) * 1988-08-19 1997-05-28 株式会社村田製作所 Chip coil and method of manufacturing the same
US5382826A (en) * 1993-12-21 1995-01-17 Xerox Corporation Stacked high voltage transistor unit
DE102016120300A1 (en) 2016-10-25 2018-04-26 Infineon Technologies Austria Ag High voltage termination structure of a power semiconductor device
DE102016120301A1 (en) * 2016-10-25 2018-04-26 Infineon Technologies Ag Power semiconductor device termination structure

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1260618A (en) * 1969-08-09 1972-01-19 Soc Gen Semiconduttori Spa Planar junctions with integrated resistor, for high voltages

Also Published As

Publication number Publication date
DE2231521A1 (en) 1973-01-18
DE2231521C2 (en) 1982-05-13
NL7109139A (en) 1973-01-04
FR2144741B1 (en) 1977-08-26
AU4397372A (en) 1974-01-03
IT959277B (en) 1973-11-10
BE785747A (en) 1973-01-02
CA963174A (en) 1975-02-18
FR2144741A1 (en) 1973-02-16
CH546483A (en) 1974-02-28
JPS5231154B1 (en) 1977-08-12
SE377864B (en) 1975-07-28
GB1394086A (en) 1975-05-14

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