ES404386A1 - Semiconductor devices - Google Patents
Semiconductor devicesInfo
- Publication number
- ES404386A1 ES404386A1 ES404386A ES404386A ES404386A1 ES 404386 A1 ES404386 A1 ES 404386A1 ES 404386 A ES404386 A ES 404386A ES 404386 A ES404386 A ES 404386A ES 404386 A1 ES404386 A1 ES 404386A1
- Authority
- ES
- Spain
- Prior art keywords
- region
- insulating layer
- layer
- junction
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 230000015556 catabolic process Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8611—Planar PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
A semiconductor device comprising a semiconductor body that is covered, at least partially, by an electrically insulating layer, a first region of a first type of conductivity contiguous to said surface and a second region of the second type of conductivity equally contiguous to said surface and which is totally surrounded within the semiconductor body by the first region and forms with it a pn junction that terminates on said surface, while, in order to increase the breakdown voltage of said pn junction, a resistance layer of a high electrical resistance on the insulating layer, said layer being separated from the pn junction and being connected by electrically conductive junction to the first region and to the second region through openings located in the insulating layer, said resistance layer covering at least one part of the insulating layer between said openings, characterized in that the layer resistance is arranged in the form of an elongated strip that is connected to at least a surface part of the insulating layer. (Machine-translation by Google Translate, not legally binding)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7109139A NL7109139A (en) | 1971-07-02 | 1971-07-02 |
Publications (1)
Publication Number | Publication Date |
---|---|
ES404386A1 true ES404386A1 (en) | 1975-06-01 |
Family
ID=19813531
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES404386A Expired ES404386A1 (en) | 1971-07-02 | 1972-06-30 | Semiconductor devices |
Country Status (12)
Country | Link |
---|---|
JP (1) | JPS5231154B1 (en) |
AU (1) | AU4397372A (en) |
BE (1) | BE785747A (en) |
CA (1) | CA963174A (en) |
CH (1) | CH546483A (en) |
DE (1) | DE2231521C2 (en) |
ES (1) | ES404386A1 (en) |
FR (1) | FR2144741B1 (en) |
GB (1) | GB1394086A (en) |
IT (1) | IT959277B (en) |
NL (1) | NL7109139A (en) |
SE (1) | SE377864B (en) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2011178B (en) * | 1977-12-15 | 1982-03-17 | Philips Electronic Associated | Fieldeffect devices |
JPS55140673A (en) * | 1979-04-14 | 1980-11-04 | Yamaha Motor Co Ltd | Rear arm mount construction |
DE2944937A1 (en) * | 1979-11-07 | 1981-06-04 | Siemens AG, 1000 Berlin und 8000 München | SEMICONDUCTOR COMPONENT |
US4947232A (en) * | 1980-03-22 | 1990-08-07 | Sharp Kabushiki Kaisha | High voltage MOS transistor |
JPS56169369A (en) * | 1980-05-30 | 1981-12-26 | Sharp Corp | High withstand voltage mos field effect semiconductor device |
JPS56169368A (en) * | 1980-05-30 | 1981-12-26 | Sharp Corp | High withstand voltage mos field effect semiconductor device |
DE3520599A1 (en) * | 1984-06-15 | 1985-12-19 | Rca Corp., Princeton, N.J. | Semiconductor component |
JPS61114574A (en) * | 1984-11-09 | 1986-06-02 | Hitachi Ltd | Semiconductor device |
JP2615151B2 (en) * | 1988-08-19 | 1997-05-28 | 株式会社村田製作所 | Chip coil and method of manufacturing the same |
US5382826A (en) * | 1993-12-21 | 1995-01-17 | Xerox Corporation | Stacked high voltage transistor unit |
DE102016120300A1 (en) | 2016-10-25 | 2018-04-26 | Infineon Technologies Austria Ag | High voltage termination structure of a power semiconductor device |
DE102016120301A1 (en) * | 2016-10-25 | 2018-04-26 | Infineon Technologies Ag | Power semiconductor device termination structure |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1260618A (en) * | 1969-08-09 | 1972-01-19 | Soc Gen Semiconduttori Spa | Planar junctions with integrated resistor, for high voltages |
-
0
- BE BE785747D patent/BE785747A/en unknown
-
1971
- 1971-07-02 NL NL7109139A patent/NL7109139A/xx unknown
-
1972
- 1972-06-28 AU AU43973/72A patent/AU4397372A/en not_active Expired
- 1972-06-28 IT IT6909272A patent/IT959277B/en active
- 1972-06-28 DE DE19722231521 patent/DE2231521C2/en not_active Expired
- 1972-06-28 CA CA145,874A patent/CA963174A/en not_active Expired
- 1972-06-29 JP JP6453172A patent/JPS5231154B1/ja active Pending
- 1972-06-29 GB GB3042772A patent/GB1394086A/en not_active Expired
- 1972-06-29 SE SE857272A patent/SE377864B/xx unknown
- 1972-06-29 CH CH546483D patent/CH546483A/en not_active IP Right Cessation
- 1972-06-30 ES ES404386A patent/ES404386A1/en not_active Expired
- 1972-07-03 FR FR7224006A patent/FR2144741B1/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE2231521A1 (en) | 1973-01-18 |
DE2231521C2 (en) | 1982-05-13 |
NL7109139A (en) | 1973-01-04 |
FR2144741B1 (en) | 1977-08-26 |
AU4397372A (en) | 1974-01-03 |
IT959277B (en) | 1973-11-10 |
BE785747A (en) | 1973-01-02 |
CA963174A (en) | 1975-02-18 |
FR2144741A1 (en) | 1973-02-16 |
CH546483A (en) | 1974-02-28 |
JPS5231154B1 (en) | 1977-08-12 |
SE377864B (en) | 1975-07-28 |
GB1394086A (en) | 1975-05-14 |
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