CH546483A - SEMI-CONDUCTOR ARRANGEMENT. - Google Patents

SEMI-CONDUCTOR ARRANGEMENT.

Info

Publication number
CH546483A
CH546483A CH546483DA CH546483A CH 546483 A CH546483 A CH 546483A CH 546483D A CH546483D A CH 546483DA CH 546483 A CH546483 A CH 546483A
Authority
CH
Switzerland
Prior art keywords
semi
conductor arrangement
conductor
arrangement
Prior art date
Application number
Other languages
German (de)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH546483A publication Critical patent/CH546483A/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402Field plates
    • H01L29/405Resistive arrangements, e.g. resistive or semi-insulating field plates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors
    • H01L29/732Vertical transistors
    • H01L29/7322Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861Diodes
    • H01L29/8611Planar PN junction diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
CH546483D 1971-07-02 1972-06-29 SEMI-CONDUCTOR ARRANGEMENT. CH546483A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7109139A NL7109139A (en) 1971-07-02 1971-07-02

Publications (1)

Publication Number Publication Date
CH546483A true CH546483A (en) 1974-02-28

Family

ID=19813531

Family Applications (1)

Application Number Title Priority Date Filing Date
CH546483D CH546483A (en) 1971-07-02 1972-06-29 SEMI-CONDUCTOR ARRANGEMENT.

Country Status (12)

Country Link
JP (1) JPS5231154B1 (en)
AU (1) AU4397372A (en)
BE (1) BE785747A (en)
CA (1) CA963174A (en)
CH (1) CH546483A (en)
DE (1) DE2231521C2 (en)
ES (1) ES404386A1 (en)
FR (1) FR2144741B1 (en)
GB (1) GB1394086A (en)
IT (1) IT959277B (en)
NL (1) NL7109139A (en)
SE (1) SE377864B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0181002A2 (en) * 1984-11-09 1986-05-14 Hitachi, Ltd. Semiconductor device having high breakdown voltage

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2011178B (en) * 1977-12-15 1982-03-17 Philips Electronic Associated Fieldeffect devices
JPS55140673A (en) * 1979-04-14 1980-11-04 Yamaha Motor Co Ltd Rear arm mount construction
DE2944937A1 (en) * 1979-11-07 1981-06-04 Siemens AG, 1000 Berlin und 8000 München SEMICONDUCTOR COMPONENT
US4947232A (en) * 1980-03-22 1990-08-07 Sharp Kabushiki Kaisha High voltage MOS transistor
JPS56169368A (en) * 1980-05-30 1981-12-26 Sharp Corp High withstand voltage mos field effect semiconductor device
JPS56169369A (en) * 1980-05-30 1981-12-26 Sharp Corp High withstand voltage mos field effect semiconductor device
DE3520599A1 (en) * 1984-06-15 1985-12-19 Rca Corp., Princeton, N.J. Semiconductor component
JP2615151B2 (en) * 1988-08-19 1997-05-28 株式会社村田製作所 Chip coil and method of manufacturing the same
US5382826A (en) * 1993-12-21 1995-01-17 Xerox Corporation Stacked high voltage transistor unit
DE102016120301A1 (en) * 2016-10-25 2018-04-26 Infineon Technologies Ag Power semiconductor device termination structure
DE102016120300A1 (en) * 2016-10-25 2018-04-26 Infineon Technologies Austria Ag High voltage termination structure of a power semiconductor device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1260618A (en) * 1969-08-09 1972-01-19 Soc Gen Semiconduttori Spa Planar junctions with integrated resistor, for high voltages

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0181002A2 (en) * 1984-11-09 1986-05-14 Hitachi, Ltd. Semiconductor device having high breakdown voltage
EP0181002A3 (en) * 1984-11-09 1988-09-21 Hitachi, Ltd. Semiconductor device having high breakdown voltage

Also Published As

Publication number Publication date
AU4397372A (en) 1974-01-03
DE2231521C2 (en) 1982-05-13
SE377864B (en) 1975-07-28
IT959277B (en) 1973-11-10
NL7109139A (en) 1973-01-04
GB1394086A (en) 1975-05-14
FR2144741B1 (en) 1977-08-26
JPS5231154B1 (en) 1977-08-12
BE785747A (en) 1973-01-02
CA963174A (en) 1975-02-18
ES404386A1 (en) 1975-06-01
FR2144741A1 (en) 1973-02-16
DE2231521A1 (en) 1973-01-18

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Legal Events

Date Code Title Description
PL Patent ceased