GB1260618A - Planar junctions with integrated resistor, for high voltages - Google Patents

Planar junctions with integrated resistor, for high voltages

Info

Publication number
GB1260618A
GB1260618A GB2414070A GB2414070A GB1260618A GB 1260618 A GB1260618 A GB 1260618A GB 2414070 A GB2414070 A GB 2414070A GB 2414070 A GB2414070 A GB 2414070A GB 1260618 A GB1260618 A GB 1260618A
Authority
GB
United Kingdom
Prior art keywords
layer
junction
semi
conductor
weakly conducting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2414070A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SGS Societa Generale Semiconduttori SpA
Original Assignee
SGS Societa Generale Semiconduttori SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Societa Generale Semiconduttori SpA filed Critical SGS Societa Generale Semiconduttori SpA
Publication of GB1260618A publication Critical patent/GB1260618A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/404—Multiple field plate structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8611—Planar PN junction diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

1,260,618. Semi-conductor devices. SOC. GENERALE SEMICONDUTTORI S.p.A. SGS. 19 May, 1970 [9 Aug., 1969], No. 24140/70. Heading H1K. A thin layer 11 of weakly conducting material overlying an oxide layer 5 interconnects opposite sides of a planar PN junction 8, 9 which emerges at a surface of a semi-conductor body 4 below the oxide layer 5. The layer 11 provides a distributed electrostatic potential in the surface of the body 4, and improves the breakdown characteristic of the junction 8, 9. The body 4 may be of Si, the junction 8, 9 being formed by oxide-masked diffusion of B from vapour. The thickness of the weakly conducting layer 11 may vary as shown to control its resistance, or the same effect may be obtained by varying its surface configuration along its length. Discrete highly conductive areas (13a-13d), Figs. 4 and 5 (not shown), may be provided above or below the weakly conducting layer to modify the potential distribution induced in the semi-conductor. The invention is applicable to integrated circuits, diodes, transistors and thyristors.
GB2414070A 1969-08-09 1970-05-19 Planar junctions with integrated resistor, for high voltages Expired GB1260618A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT5295669 1969-08-09

Publications (1)

Publication Number Publication Date
GB1260618A true GB1260618A (en) 1972-01-19

Family

ID=11278832

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2414070A Expired GB1260618A (en) 1969-08-09 1970-05-19 Planar junctions with integrated resistor, for high voltages

Country Status (4)

Country Link
DE (1) DE2031082C2 (en)
FR (1) FR2070661B1 (en)
GB (1) GB1260618A (en)
NL (1) NL168654C (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0615291B1 (en) * 1993-03-10 1997-05-21 Hitachi, Ltd. A high breakdown voltage semiconductor device having a semi-insulating layer
WO2000075989A1 (en) * 1999-06-03 2000-12-14 Koninklijke Philips Electronics N.V. Semiconductor device comprising a high-voltage circuit element

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4157563A (en) * 1971-07-02 1979-06-05 U.S. Philips Corporation Semiconductor device
BE785747A (en) * 1971-07-02 1973-01-02 Philips Nv SEMICONDUCTOR DEVICE
JPS5218070B2 (en) * 1972-10-04 1977-05-19
US4009483A (en) * 1974-04-04 1977-02-22 Motorola, Inc. Implementation of surface sensitive semiconductor devices
JPS51111069A (en) * 1975-03-26 1976-10-01 Hitachi Ltd Semiconductor device
GB2011178B (en) * 1977-12-15 1982-03-17 Philips Electronic Associated Fieldeffect devices
US4947232A (en) * 1980-03-22 1990-08-07 Sharp Kabushiki Kaisha High voltage MOS transistor
JPS56169369A (en) * 1980-05-30 1981-12-26 Sharp Corp High withstand voltage mos field effect semiconductor device
JPS56169368A (en) * 1980-05-30 1981-12-26 Sharp Corp High withstand voltage mos field effect semiconductor device
DE3520599A1 (en) * 1984-06-15 1985-12-19 Rca Corp., Princeton, N.J. Semiconductor component
GB2167229B (en) * 1984-11-21 1988-07-20 Philips Electronic Associated Semiconductor devices

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA941074A (en) * 1964-04-16 1974-01-29 Northern Electric Company Limited Semiconductor devices with field electrodes

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0615291B1 (en) * 1993-03-10 1997-05-21 Hitachi, Ltd. A high breakdown voltage semiconductor device having a semi-insulating layer
WO2000075989A1 (en) * 1999-06-03 2000-12-14 Koninklijke Philips Electronics N.V. Semiconductor device comprising a high-voltage circuit element

Also Published As

Publication number Publication date
NL7009259A (en) 1971-02-11
DE2031082A1 (en) 1971-04-08
NL168654C (en) 1982-04-16
FR2070661B1 (en) 1974-03-22
FR2070661A1 (en) 1971-09-17
NL168654B (en) 1981-11-16
DE2031082C2 (en) 1983-02-17

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Legal Events

Date Code Title Description
PS Patent sealed
PE20 Patent expired after termination of 20 years