GB1251456A - - Google Patents

Info

Publication number
GB1251456A
GB1251456A GB1251456DA GB1251456A GB 1251456 A GB1251456 A GB 1251456A GB 1251456D A GB1251456D A GB 1251456DA GB 1251456 A GB1251456 A GB 1251456A
Authority
GB
United Kingdom
Prior art keywords
junction
semi
passivating layer
conductor
june
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1251456A publication Critical patent/GB1251456A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

1,251,456. Semi-conductor devices. FERRANTI Ltd. 8 June, 1970 [12 June, 1969], No. 29974/69. Heading H1K. Ion migration from a plastics encapsulation 27 into a passivating layer 18 on a semi-conductor device such as a Si transistor 10 under the influence of an electric field associated with a reverse-biased p-n junction 19 is prevented by the provision of a metal shield 22 between the plastics encapsulation 27 and the passivating layer 18 where they overlie the junction 19. The shield 22 is at the same potential as one of the two semi-conductor regions defining the junction 19; thus in the embodiment it comprises an extension of the base electrode 22. The passivating layer 18 may be of silicon oxide containing phosphorus introduced during diffusion of the emitter region 17 while the plastics encapsulation 27 may be an epoxy resin, a silicone or polytetrafluorethylene.
GB1251456D 1969-06-12 1969-06-12 Expired GB1251456A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2997469 1969-06-12

Publications (1)

Publication Number Publication Date
GB1251456A true GB1251456A (en) 1971-10-27

Family

ID=10300217

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1251456D Expired GB1251456A (en) 1969-06-12 1969-06-12

Country Status (1)

Country Link
GB (1) GB1251456A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2505091A1 (en) * 1981-04-30 1982-11-05 Cii Honeywell Bull DEVICE FOR PROTECTING ELECTRONIC CIRCUITS SUCH AS INTEGRATED CIRCUITS AGAINST ELECTROSTATIC LOADS
EP0075331A2 (en) * 1981-09-23 1983-03-30 Siemens Aktiengesellschaft Device for compensating corrosion effects in integrated semiconductor circuits
GB2128025A (en) * 1982-09-24 1984-04-18 Hitachi Ltd Protective electrode for electronic device
EP0169941A1 (en) * 1984-07-31 1986-02-05 Siemens Aktiengesellschaft Monolithic integrated semiconductor circuit
US4580156A (en) * 1983-12-30 1986-04-01 At&T Bell Laboratories Structured resistive field shields for low-leakage high voltage devices
EP0435530A2 (en) * 1989-12-21 1991-07-03 General Electric Company Hermetic high density interconnected electronic system or other body
EP0689248A1 (en) * 1994-06-20 1995-12-27 STMicroelectronics S.r.l. Integrated device with a surface electrical field delimiting structure and relative fabrication process

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2505091A1 (en) * 1981-04-30 1982-11-05 Cii Honeywell Bull DEVICE FOR PROTECTING ELECTRONIC CIRCUITS SUCH AS INTEGRATED CIRCUITS AGAINST ELECTROSTATIC LOADS
EP0065437A1 (en) * 1981-04-30 1982-11-24 COMPAGNIE INTERNATIONALE POUR L'INFORMATIQUE CII - HONEYWELL BULL (dite CII-HB) Device for protecting electronic circuits such as integrated circuits from electrostatic charges
EP0075331A2 (en) * 1981-09-23 1983-03-30 Siemens Aktiengesellschaft Device for compensating corrosion effects in integrated semiconductor circuits
EP0075331A3 (en) * 1981-09-23 1985-03-20 Siemens Aktiengesellschaft Device for compensating corrosion effects in integrated semiconductor circuits
GB2128025A (en) * 1982-09-24 1984-04-18 Hitachi Ltd Protective electrode for electronic device
US4580156A (en) * 1983-12-30 1986-04-01 At&T Bell Laboratories Structured resistive field shields for low-leakage high voltage devices
EP0169941A1 (en) * 1984-07-31 1986-02-05 Siemens Aktiengesellschaft Monolithic integrated semiconductor circuit
EP0435530A2 (en) * 1989-12-21 1991-07-03 General Electric Company Hermetic high density interconnected electronic system or other body
EP0435530A3 (en) * 1989-12-21 1991-09-11 General Electric Company Hermetic high density interconnected electronic system or other body
EP0689248A1 (en) * 1994-06-20 1995-12-27 STMicroelectronics S.r.l. Integrated device with a surface electrical field delimiting structure and relative fabrication process
US5804884A (en) * 1994-06-20 1998-09-08 Sgs-Thomson Microelectronics S.R.L. Surface electrical field delimiting structure for an integrated circuit

Similar Documents

Publication Publication Date Title
GB1165575A (en) Semiconductor Device Stabilization.
GB1328145A (en) Method of producing integrated cirucits
JPS5515299A (en) Large power transistor
GB1041318A (en) Circuits with field effect transistors
GB1450561A (en) Capacitance circuits
GB1251456A (en)
GB1213636A (en) Switching circuit
GB849477A (en) Improvements in or relating to semiconductor control devices
GB1316819A (en) With protection against voltage surges
GB1088795A (en) Semiconductor devices with low leakage current across junction
GB1247466A (en) Method for determining excess carrier lifetime in semiconductor devices
GB1125650A (en) Insulating layers and devices incorporating such layers
GB1128480A (en) High voltage semiconductor device with electrical gradient-reducing groove
GB1039915A (en) Improvements in or relating to semiconductor devices
GB1106787A (en) Improvements in semiconductor devices
GB1287247A (en) Improved semiconductor device with high junction breakdown voltage and method of manufacture
GB1100737A (en) Semiconductor device junction stabilization
GB1306970A (en) Semiconductor circuit
GB1270214A (en) Improvements in or relating to stabilised semiconductor components
GB1206202A (en) Junction transistors
GB1496306A (en) Semiconductor integrated circuit including an epitaxial base type vertical transistor
GB1110321A (en) Improvements in or relating to semiconductor devices
GB1207305A (en) Improvements in transistors
GB1494653A (en) Charge coupled devices
GB1271896A (en) Semiconductor rectifying junction device

Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees