GB1213636A - Switching circuit - Google Patents
Switching circuitInfo
- Publication number
- GB1213636A GB1213636A GB53819/67A GB5381967A GB1213636A GB 1213636 A GB1213636 A GB 1213636A GB 53819/67 A GB53819/67 A GB 53819/67A GB 5381967 A GB5381967 A GB 5381967A GB 1213636 A GB1213636 A GB 1213636A
- Authority
- GB
- United Kingdom
- Prior art keywords
- transistor
- pnpn
- transistors
- nov
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- OQCFWECOQNPQCG-UHFFFAOYSA-N 1,3,4,8-tetrahydropyrimido[4,5-c]oxazin-7-one Chemical compound C1CONC2=C1C=NC(=O)N2 OQCFWECOQNPQCG-UHFFFAOYSA-N 0.000 abstract 1
- 239000000969 carrier Substances 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 230000005669 field effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
- H01L27/1027—Thyristors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electronic Switches (AREA)
- Bipolar Integrated Circuits (AREA)
- Thyristor Switches And Gates (AREA)
Abstract
1,213,636. Semi-conductor devices. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. 27 Nov., 1967 [30 Nov., 1966], No. 53819/67. Heading H1K. [Also in Division H3] The Specification describes an integrated circuit construction of a switching circuit (see Division H3). A control circuit (Fig. 6a, not shown) includes a four region transistor N 1 , P 2 , N 0, P 1 (Figs. 6b and 6c), a junction and an insulated gate field effect transistor P 3 , No, P 1 ; P 3 , N 0 , P 4 ; resistors 606, 607 and a Zener diode 608 made by diffusion processes on a silicon substrate 618. Contacts 601-605 are made through windows 612-617 formed in an oxide layer 619. In an output circuit (Fig. 7a, not shown) two pairs of PNPN transistors are connected in parallel between an input terminal 700 (Fig. 7b) and two output terminals 701 and 702. Connections from the input 700 are made via windows 715 and 716 to the common connected emitters P 1 and collectors N 3 of the transistors. The collector N 1 of one PNPN transistor (706) is connected via the common output terminal 701 to the emitter P 4 of another PNPN transistor (708) similarly the collector N 2 of a further PNPN transistor (708) is connected via the common output terminal 702 to the emitter P 5 of another PNPN transistor (709). A junction transistor N 0 P 7 N 4 , where N 0 is a silicon layer (Figs. 7c and 7d, not shown), on which the transistors are formed, is spaced laterally from the PNPN transistors so that its base P 7 cannot collect minority carriers that are introduced into the base layer (No) of any PNPN transistor.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL6616834A NL6616834A (en) | 1966-11-30 | 1966-11-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1213636A true GB1213636A (en) | 1970-11-25 |
Family
ID=19798345
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB53819/67A Expired GB1213636A (en) | 1966-11-30 | 1967-11-27 | Switching circuit |
Country Status (10)
Country | Link |
---|---|
US (1) | US3564291A (en) |
JP (1) | JPS4828468B1 (en) |
AT (1) | AT284250B (en) |
BE (1) | BE707216A (en) |
CH (1) | CH496369A (en) |
DE (1) | DE1286098B (en) |
DK (1) | DK119413B (en) |
GB (1) | GB1213636A (en) |
NL (1) | NL6616834A (en) |
SE (1) | SE326730B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2139835A (en) * | 1983-05-11 | 1984-11-14 | Tadiran Israel Elect Ind Ltd | Rf power switches |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL6908332A (en) * | 1969-05-30 | 1970-12-02 | ||
US3737588A (en) * | 1971-10-12 | 1973-06-05 | Gte Sylvania Inc | High speed semiconductor switching circuit |
US3826873A (en) * | 1971-10-12 | 1974-07-30 | Gte Sylvania Inc | Switching circuit employing latching type semiconductor devices and associated control transistors |
US3819867A (en) * | 1971-10-12 | 1974-06-25 | Gte Laboratories Inc | Matrix employing semiconductor switching circuit |
CH543178A (en) * | 1972-03-27 | 1973-10-15 | Bbc Brown Boveri & Cie | Continuously controllable power semiconductor component |
US4200772A (en) * | 1973-08-29 | 1980-04-29 | Graphic Scanning Corp. | Computer controlled telephone answering system |
US4001866A (en) * | 1974-08-22 | 1977-01-04 | Dionics, Inc. | Monolithic, junction isolated photrac |
US4001867A (en) * | 1974-08-22 | 1977-01-04 | Dionics, Inc. | Semiconductive devices with integrated circuit switches |
JPS5759717B2 (en) * | 1974-12-27 | 1982-12-16 | Hitachi Ltd | |
SE392783B (en) * | 1975-06-19 | 1977-04-18 | Asea Ab | SEMICONDUCTOR DEVICE INCLUDING A THYRIST AND A FIELD POWER TRANSISTOR PART |
JPS5356865U (en) * | 1976-10-18 | 1978-05-15 | ||
JPS5391569U (en) * | 1976-12-24 | 1978-07-26 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3189783A (en) * | 1963-03-25 | 1965-06-15 | Zenith Radio Corp | Switching arrangement for fast on-off switching of high amplitude current |
US3299334A (en) * | 1963-11-14 | 1967-01-17 | Zenith Radio Corp | Remote control system using a pair of semiconductor switches to effect bidirectionalcurrent flow in a control device |
-
1966
- 1966-11-30 NL NL6616834A patent/NL6616834A/xx unknown
-
1967
- 1967-11-08 DE DEN31566A patent/DE1286098B/en not_active Withdrawn
- 1967-11-20 US US684240A patent/US3564291A/en not_active Expired - Lifetime
- 1967-11-27 SE SE16251/67A patent/SE326730B/xx unknown
- 1967-11-27 GB GB53819/67A patent/GB1213636A/en not_active Expired
- 1967-11-27 AT AT1067867A patent/AT284250B/en not_active IP Right Cessation
- 1967-11-27 DK DK592267AA patent/DK119413B/en unknown
- 1967-11-27 CH CH1660667A patent/CH496369A/en not_active IP Right Cessation
- 1967-11-28 BE BE707216D patent/BE707216A/xx unknown
- 1967-11-30 JP JP42076687A patent/JPS4828468B1/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2139835A (en) * | 1983-05-11 | 1984-11-14 | Tadiran Israel Elect Ind Ltd | Rf power switches |
Also Published As
Publication number | Publication date |
---|---|
NL6616834A (en) | 1968-05-31 |
DE1286098B (en) | 1969-01-02 |
AT284250B (en) | 1970-09-10 |
CH496369A (en) | 1970-09-15 |
US3564291A (en) | 1971-02-16 |
BE707216A (en) | 1968-05-28 |
JPS4828468B1 (en) | 1973-09-01 |
SE326730B (en) | 1970-08-03 |
DK119413B (en) | 1970-12-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PCNP | Patent ceased through non-payment of renewal fee |