JPS4828468B1 - - Google Patents

Info

Publication number
JPS4828468B1
JPS4828468B1 JP42076687A JP7668767A JPS4828468B1 JP S4828468 B1 JPS4828468 B1 JP S4828468B1 JP 42076687 A JP42076687 A JP 42076687A JP 7668767 A JP7668767 A JP 7668767A JP S4828468 B1 JPS4828468 B1 JP S4828468B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP42076687A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4828468B1 publication Critical patent/JPS4828468B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
    • H01L27/1027—Thyristors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
JP42076687A 1966-11-30 1967-11-30 Pending JPS4828468B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6616834A NL6616834A (en) 1966-11-30 1966-11-30

Publications (1)

Publication Number Publication Date
JPS4828468B1 true JPS4828468B1 (en) 1973-09-01

Family

ID=19798345

Family Applications (1)

Application Number Title Priority Date Filing Date
JP42076687A Pending JPS4828468B1 (en) 1966-11-30 1967-11-30

Country Status (10)

Country Link
US (1) US3564291A (en)
JP (1) JPS4828468B1 (en)
AT (1) AT284250B (en)
BE (1) BE707216A (en)
CH (1) CH496369A (en)
DE (1) DE1286098B (en)
DK (1) DK119413B (en)
GB (1) GB1213636A (en)
NL (1) NL6616834A (en)
SE (1) SE326730B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5356865U (en) * 1976-10-18 1978-05-15
JPS5391569U (en) * 1976-12-24 1978-07-26

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6908332A (en) * 1969-05-30 1970-12-02
US3737588A (en) * 1971-10-12 1973-06-05 Gte Sylvania Inc High speed semiconductor switching circuit
US3819867A (en) * 1971-10-12 1974-06-25 Gte Laboratories Inc Matrix employing semiconductor switching circuit
US3826873A (en) * 1971-10-12 1974-07-30 Gte Sylvania Inc Switching circuit employing latching type semiconductor devices and associated control transistors
CH543178A (en) * 1972-03-27 1973-10-15 Bbc Brown Boveri & Cie Continuously controllable power semiconductor component
US4200772A (en) * 1973-08-29 1980-04-29 Graphic Scanning Corp. Computer controlled telephone answering system
US4001867A (en) * 1974-08-22 1977-01-04 Dionics, Inc. Semiconductive devices with integrated circuit switches
US4001866A (en) * 1974-08-22 1977-01-04 Dionics, Inc. Monolithic, junction isolated photrac
JPS5759717B2 (en) * 1974-12-27 1982-12-16 Hitachi Ltd
SE392783B (en) * 1975-06-19 1977-04-18 Asea Ab SEMICONDUCTOR DEVICE INCLUDING A THYRIST AND A FIELD POWER TRANSISTOR PART
IL68659A0 (en) * 1983-05-11 1983-09-30 Tadiran Israel Elect Ind Ltd Rf power switches

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3189783A (en) * 1963-03-25 1965-06-15 Zenith Radio Corp Switching arrangement for fast on-off switching of high amplitude current
US3299334A (en) * 1963-11-14 1967-01-17 Zenith Radio Corp Remote control system using a pair of semiconductor switches to effect bidirectionalcurrent flow in a control device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5356865U (en) * 1976-10-18 1978-05-15
JPS5391569U (en) * 1976-12-24 1978-07-26

Also Published As

Publication number Publication date
US3564291A (en) 1971-02-16
CH496369A (en) 1970-09-15
NL6616834A (en) 1968-05-31
DK119413B (en) 1970-12-28
BE707216A (en) 1968-05-28
AT284250B (en) 1970-09-10
GB1213636A (en) 1970-11-25
SE326730B (en) 1970-08-03
DE1286098B (en) 1969-01-02

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