GB849477A - Improvements in or relating to semiconductor control devices - Google Patents
Improvements in or relating to semiconductor control devicesInfo
- Publication number
- GB849477A GB849477A GB2980057A GB2980057A GB849477A GB 849477 A GB849477 A GB 849477A GB 2980057 A GB2980057 A GB 2980057A GB 2980057 A GB2980057 A GB 2980057A GB 849477 A GB849477 A GB 849477A
- Authority
- GB
- United Kingdom
- Prior art keywords
- mass
- semi
- type
- conductor
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052787 antimony Inorganic materials 0.000 abstract 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 241001634884 Cochlicopa lubricella Species 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- KAPYVWKEUSXLKC-UHFFFAOYSA-N [Sb].[Au] Chemical compound [Sb].[Au] KAPYVWKEUSXLKC-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 238000001816 cooling Methods 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000008188 pellet Substances 0.000 abstract 1
- 229920001296 polysiloxane Polymers 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 239000002966 varnish Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/88—Tunnel-effect diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/864—Transit-time diodes, e.g. IMPATT, TRAPATT diodes
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/06—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes without control electrode or semiconductor devices without control electrode
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
849,477. Semi-conductor devices. NATIONAL RESEARCH DEVELOPMENT CORPORATION. Sept. 18, 1958, [Sept. 23, 1957], No. 29800/57. Class 37 A semi-conductor device utilising avalanche injection comprises a semi-conductor mass of one conductivity type having an ohmic base electrode, and a second electrode of smaller cross section connected to a pillar of semiconductor which extends from the mass and has a PP+ or NN+ junction according to whether the mass in P-type or N-type respectively. Fig. 1 shows a diode in which the base electrode 6 consisting of an antimony doped gold wire is connected on to an N + region to an N type silicon mass 2 and the second electrode 1 also of antimony doped gold wire is connected via N+ region 3 to the N type mass 2. A cavity 5 produced, for example by chemical or electrolytic. etching, provides a thin pillar 4 of semi-conductor material. The current voltage characteristic of this device has a negative-resistance region. Germanium may be used in place of silicon, and aluminium in place of the gold-antimony wire. The base electrode may consist of a copper cooling fin or disc. The structure may be surrounded with pellet silicone varnish. Specification 849,476 is referred to.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB2980057A GB849477A (en) | 1957-09-23 | 1957-09-23 | Improvements in or relating to semiconductor control devices |
DEN15611A DE1083938B (en) | 1957-09-23 | 1958-09-20 | Semiconductor arrangement with a semiconductor body made of semiconductor material of one conductivity type |
FR1210386D FR1210386A (en) | 1957-09-23 | 1958-09-23 | Semiconductor control devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB2980057A GB849477A (en) | 1957-09-23 | 1957-09-23 | Improvements in or relating to semiconductor control devices |
Publications (1)
Publication Number | Publication Date |
---|---|
GB849477A true GB849477A (en) | 1960-09-28 |
Family
ID=10297363
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB2980057A Expired GB849477A (en) | 1957-09-23 | 1957-09-23 | Improvements in or relating to semiconductor control devices |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE1083938B (en) |
FR (1) | FR1210386A (en) |
GB (1) | GB849477A (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1171538B (en) * | 1961-06-02 | 1964-06-04 | Telefunken Patent | Semiconductor arrangement with at least two alloy electrodes on one surface of the semiconductor body |
US3150021A (en) * | 1961-07-25 | 1964-09-22 | Nippon Electric Co | Method of manufacturing semiconductor devices |
US3154450A (en) * | 1960-01-27 | 1964-10-27 | Bendix Corp | Method of making mesas for diodes by etching |
US3160799A (en) * | 1959-12-14 | 1964-12-08 | Philips Corp | High-frequency transistor |
US3200311A (en) * | 1961-04-03 | 1965-08-10 | Pacific Semiconductors Inc | Low capacitance semiconductor devices |
US3250964A (en) * | 1961-04-28 | 1966-05-10 | Ibm | Semiconductor diode device and method of making it |
DE1232267B (en) * | 1961-05-27 | 1967-01-12 | Telefunken Patent | Process for the production of a semiconductor component with a mesa structure |
WO2009133961A1 (en) * | 2008-05-02 | 2009-11-05 | Canon Kabushiki Kaisha | Methods of manufacturing capacitive electromechanical transducer and capacitive electromechanical transducers |
WO2010134302A3 (en) * | 2009-05-19 | 2011-01-20 | Canon Kabushiki Kaisha | Method for manufacturing a capacitive electromechanical transducer |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL267818A (en) * | 1960-08-02 | |||
DE1282190B (en) * | 1964-03-12 | 1968-11-07 | Kabusihiki Kaisha Hitachi Seis | Process for manufacturing transistors |
DE2926757C2 (en) * | 1979-07-03 | 1983-08-04 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Semiconductor device with negative differential resistance |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE525428A (en) * | 1952-12-30 | |||
BE527570A (en) * | 1953-05-21 | |||
NL92927C (en) * | 1954-07-27 | |||
FR1131253A (en) * | 1955-09-14 | 1957-02-19 | Csf | Improvements to field-effect transistors |
-
1957
- 1957-09-23 GB GB2980057A patent/GB849477A/en not_active Expired
-
1958
- 1958-09-20 DE DEN15611A patent/DE1083938B/en active Granted
- 1958-09-23 FR FR1210386D patent/FR1210386A/en not_active Expired
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3160799A (en) * | 1959-12-14 | 1964-12-08 | Philips Corp | High-frequency transistor |
US3154450A (en) * | 1960-01-27 | 1964-10-27 | Bendix Corp | Method of making mesas for diodes by etching |
US3200311A (en) * | 1961-04-03 | 1965-08-10 | Pacific Semiconductors Inc | Low capacitance semiconductor devices |
US3250964A (en) * | 1961-04-28 | 1966-05-10 | Ibm | Semiconductor diode device and method of making it |
DE1232267B (en) * | 1961-05-27 | 1967-01-12 | Telefunken Patent | Process for the production of a semiconductor component with a mesa structure |
DE1171538B (en) * | 1961-06-02 | 1964-06-04 | Telefunken Patent | Semiconductor arrangement with at least two alloy electrodes on one surface of the semiconductor body |
US3150021A (en) * | 1961-07-25 | 1964-09-22 | Nippon Electric Co | Method of manufacturing semiconductor devices |
WO2009133961A1 (en) * | 2008-05-02 | 2009-11-05 | Canon Kabushiki Kaisha | Methods of manufacturing capacitive electromechanical transducer and capacitive electromechanical transducers |
CN102015127A (en) * | 2008-05-02 | 2011-04-13 | 佳能株式会社 | Methods of manufacturing capacitive electromechanical transducer and capacitive electromechanical transducers |
CN102015127B (en) * | 2008-05-02 | 2013-05-29 | 佳能株式会社 | Methods of manufacturing capacitive electromechanical transducer and capacitive electromechanical transducers |
WO2010134302A3 (en) * | 2009-05-19 | 2011-01-20 | Canon Kabushiki Kaisha | Method for manufacturing a capacitive electromechanical transducer |
US8426235B2 (en) | 2009-05-19 | 2013-04-23 | Canon Kabushiki Kaisha | Method for manufacturing capacitive electromechanical transducer |
Also Published As
Publication number | Publication date |
---|---|
FR1210386A (en) | 1960-03-08 |
DE1083938B (en) | 1960-06-23 |
DE1083938C2 (en) | 1960-12-15 |
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