GB849477A - Improvements in or relating to semiconductor control devices - Google Patents

Improvements in or relating to semiconductor control devices

Info

Publication number
GB849477A
GB849477A GB2980057A GB2980057A GB849477A GB 849477 A GB849477 A GB 849477A GB 2980057 A GB2980057 A GB 2980057A GB 2980057 A GB2980057 A GB 2980057A GB 849477 A GB849477 A GB 849477A
Authority
GB
United Kingdom
Prior art keywords
mass
semi
type
conductor
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2980057A
Inventor
Alan Frank Gibson
John Rowland Morgan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Research Development Corp UK
Original Assignee
National Research Development Corp UK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Research Development Corp UK filed Critical National Research Development Corp UK
Priority to GB2980057A priority Critical patent/GB849477A/en
Priority to DEN15611A priority patent/DE1083938B/en
Priority to FR1210386D priority patent/FR1210386A/en
Publication of GB849477A publication Critical patent/GB849477A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/88—Tunnel-effect diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/864—Transit-time diodes, e.g. IMPATT, TRAPATT diodes
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
    • H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
    • H02M7/06—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes without control electrode or semiconductor devices without control electrode

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

849,477. Semi-conductor devices. NATIONAL RESEARCH DEVELOPMENT CORPORATION. Sept. 18, 1958, [Sept. 23, 1957], No. 29800/57. Class 37 A semi-conductor device utilising avalanche injection comprises a semi-conductor mass of one conductivity type having an ohmic base electrode, and a second electrode of smaller cross section connected to a pillar of semiconductor which extends from the mass and has a PP+ or NN+ junction according to whether the mass in P-type or N-type respectively. Fig. 1 shows a diode in which the base electrode 6 consisting of an antimony doped gold wire is connected on to an N + region to an N type silicon mass 2 and the second electrode 1 also of antimony doped gold wire is connected via N+ region 3 to the N type mass 2. A cavity 5 produced, for example by chemical or electrolytic. etching, provides a thin pillar 4 of semi-conductor material. The current voltage characteristic of this device has a negative-resistance region. Germanium may be used in place of silicon, and aluminium in place of the gold-antimony wire. The base electrode may consist of a copper cooling fin or disc. The structure may be surrounded with pellet silicone varnish. Specification 849,476 is referred to.
GB2980057A 1957-09-23 1957-09-23 Improvements in or relating to semiconductor control devices Expired GB849477A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GB2980057A GB849477A (en) 1957-09-23 1957-09-23 Improvements in or relating to semiconductor control devices
DEN15611A DE1083938B (en) 1957-09-23 1958-09-20 Semiconductor arrangement with a semiconductor body made of semiconductor material of one conductivity type
FR1210386D FR1210386A (en) 1957-09-23 1958-09-23 Semiconductor control devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2980057A GB849477A (en) 1957-09-23 1957-09-23 Improvements in or relating to semiconductor control devices

Publications (1)

Publication Number Publication Date
GB849477A true GB849477A (en) 1960-09-28

Family

ID=10297363

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2980057A Expired GB849477A (en) 1957-09-23 1957-09-23 Improvements in or relating to semiconductor control devices

Country Status (3)

Country Link
DE (1) DE1083938B (en)
FR (1) FR1210386A (en)
GB (1) GB849477A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1171538B (en) * 1961-06-02 1964-06-04 Telefunken Patent Semiconductor arrangement with at least two alloy electrodes on one surface of the semiconductor body
US3150021A (en) * 1961-07-25 1964-09-22 Nippon Electric Co Method of manufacturing semiconductor devices
US3154450A (en) * 1960-01-27 1964-10-27 Bendix Corp Method of making mesas for diodes by etching
US3160799A (en) * 1959-12-14 1964-12-08 Philips Corp High-frequency transistor
US3200311A (en) * 1961-04-03 1965-08-10 Pacific Semiconductors Inc Low capacitance semiconductor devices
US3250964A (en) * 1961-04-28 1966-05-10 Ibm Semiconductor diode device and method of making it
DE1232267B (en) * 1961-05-27 1967-01-12 Telefunken Patent Process for the production of a semiconductor component with a mesa structure
WO2009133961A1 (en) * 2008-05-02 2009-11-05 Canon Kabushiki Kaisha Methods of manufacturing capacitive electromechanical transducer and capacitive electromechanical transducers
WO2010134302A3 (en) * 2009-05-19 2011-01-20 Canon Kabushiki Kaisha Method for manufacturing a capacitive electromechanical transducer

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL267818A (en) * 1960-08-02
DE1282190B (en) * 1964-03-12 1968-11-07 Kabusihiki Kaisha Hitachi Seis Process for manufacturing transistors
DE2926757C2 (en) * 1979-07-03 1983-08-04 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Semiconductor device with negative differential resistance

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE525428A (en) * 1952-12-30
BE527570A (en) * 1953-05-21
NL92927C (en) * 1954-07-27
FR1131253A (en) * 1955-09-14 1957-02-19 Csf Improvements to field-effect transistors

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3160799A (en) * 1959-12-14 1964-12-08 Philips Corp High-frequency transistor
US3154450A (en) * 1960-01-27 1964-10-27 Bendix Corp Method of making mesas for diodes by etching
US3200311A (en) * 1961-04-03 1965-08-10 Pacific Semiconductors Inc Low capacitance semiconductor devices
US3250964A (en) * 1961-04-28 1966-05-10 Ibm Semiconductor diode device and method of making it
DE1232267B (en) * 1961-05-27 1967-01-12 Telefunken Patent Process for the production of a semiconductor component with a mesa structure
DE1171538B (en) * 1961-06-02 1964-06-04 Telefunken Patent Semiconductor arrangement with at least two alloy electrodes on one surface of the semiconductor body
US3150021A (en) * 1961-07-25 1964-09-22 Nippon Electric Co Method of manufacturing semiconductor devices
WO2009133961A1 (en) * 2008-05-02 2009-11-05 Canon Kabushiki Kaisha Methods of manufacturing capacitive electromechanical transducer and capacitive electromechanical transducers
CN102015127A (en) * 2008-05-02 2011-04-13 佳能株式会社 Methods of manufacturing capacitive electromechanical transducer and capacitive electromechanical transducers
CN102015127B (en) * 2008-05-02 2013-05-29 佳能株式会社 Methods of manufacturing capacitive electromechanical transducer and capacitive electromechanical transducers
WO2010134302A3 (en) * 2009-05-19 2011-01-20 Canon Kabushiki Kaisha Method for manufacturing a capacitive electromechanical transducer
US8426235B2 (en) 2009-05-19 2013-04-23 Canon Kabushiki Kaisha Method for manufacturing capacitive electromechanical transducer

Also Published As

Publication number Publication date
FR1210386A (en) 1960-03-08
DE1083938B (en) 1960-06-23
DE1083938C2 (en) 1960-12-15

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