GB912114A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB912114A
GB912114A GB3280261A GB3280261A GB912114A GB 912114 A GB912114 A GB 912114A GB 3280261 A GB3280261 A GB 3280261A GB 3280261 A GB3280261 A GB 3280261A GB 912114 A GB912114 A GB 912114A
Authority
GB
United Kingdom
Prior art keywords
bars
regions
source
drain
sept
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3280261A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of GB912114A publication Critical patent/GB912114A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1058—Channel region of field-effect devices of field-effect transistors with PN junction gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)

Abstract

912,114. Semi-conductor devices. WESTINGHOUSE ELECTRIC CORPORATION. Sept. 13, 1961 [Sept. 26, 1960], No. 32802/61. Class 37. A unipolar transistor comprises a semi-conductor body with alternate P and N type regions in the form of bars extending parallel to one another between low-resistivity regions at opposite ends of the body, source and drain electrodes being secured to the low-resistivity ends of the body and a gate electrode being secured astride the bars. The body may be formed by rate growth from a melt to give the alternate P and N regions. The source, drain, and gate electrodes are provided by alloying bars of lead-tin eutectic alloy, germanium, or gold; the source and drain bars being heavily doped to provide N-type impurity while the gate electrode is heavily doped to provide P-type impurity. The consequent N+, N, and P regions are shown in Fig. 3. The transistor may be mounted on a ceramic base 6 with rebated terminal bars 4 and 5 which act as heat sinks.
GB3280261A 1960-09-26 1961-09-13 Semiconductor devices Expired GB912114A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US5855660A 1960-09-26 1960-09-26

Publications (1)

Publication Number Publication Date
GB912114A true GB912114A (en) 1962-12-05

Family

ID=22017543

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3280261A Expired GB912114A (en) 1960-09-26 1961-09-13 Semiconductor devices

Country Status (1)

Country Link
GB (1) GB912114A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3354362A (en) * 1965-03-23 1967-11-21 Hughes Aircraft Co Planar multi-channel field-effect tetrode
US3372316A (en) * 1963-07-26 1968-03-05 Teszner Stanislas Integral grid and multichannel field effect devices
US3430112A (en) * 1964-07-13 1969-02-25 Philips Corp Insulated gate field effect transistor with channel portions of different conductivity
DE1589704B1 (en) * 1966-11-22 1970-11-12 Itt Ind Gmbh Deutsche Method for manufacturing a semiconductor component

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3372316A (en) * 1963-07-26 1968-03-05 Teszner Stanislas Integral grid and multichannel field effect devices
US3430112A (en) * 1964-07-13 1969-02-25 Philips Corp Insulated gate field effect transistor with channel portions of different conductivity
US3354362A (en) * 1965-03-23 1967-11-21 Hughes Aircraft Co Planar multi-channel field-effect tetrode
DE1589704B1 (en) * 1966-11-22 1970-11-12 Itt Ind Gmbh Deutsche Method for manufacturing a semiconductor component

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