GB820252A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- GB820252A GB820252A GB3115957A GB3115957A GB820252A GB 820252 A GB820252 A GB 820252A GB 3115957 A GB3115957 A GB 3115957A GB 3115957 A GB3115957 A GB 3115957A GB 820252 A GB820252 A GB 820252A
- Authority
- GB
- United Kingdom
- Prior art keywords
- wires
- semi
- leads
- conductor
- gold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052710 silicon Inorganic materials 0.000 abstract 4
- 239000010703 silicon Substances 0.000 abstract 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- 229910000967 As alloy Inorganic materials 0.000 abstract 1
- 229910001245 Sb alloy Inorganic materials 0.000 abstract 1
- VJRVSSUCOHZSHP-UHFFFAOYSA-N [As].[Au] Chemical compound [As].[Au] VJRVSSUCOHZSHP-UHFFFAOYSA-N 0.000 abstract 1
- KAPYVWKEUSXLKC-UHFFFAOYSA-N [Sb].[Au] Chemical compound [Sb].[Au] KAPYVWKEUSXLKC-UHFFFAOYSA-N 0.000 abstract 1
- 235000011054 acetic acid Nutrition 0.000 abstract 1
- 150000001243 acetic acids Chemical class 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- 239000002140 antimony alloy Substances 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Thermistors And Varistors (AREA)
Abstract
820,252. Semi-conductor devices. STANDARD TELEPHONES & CABLES Ltd. (International Telephone & Telegraph Corporation). Oct. 4, 1957, No. 31159/57. Class 37. A P-N junction is produced by passing current through a semi-conductor body having an intermediate portion of reduced cross-sectional area so that this portion heats sufficiently to become alloyed to an adjacent piece of impurity material. Fig. 1 shows the first stage in one example, in which aluminium wires 7 and 8 are fused in dry nitrogen to the thicker end portions of a P-type silicon body 1 which is mounted on a heater element 2. This results in the provision of two ohmic contacts. The wires 7 and 8 are then fused to leads 11 and 12 Fig. 2) so that body 1 may be supported in a manner such that its intermediate thin portion contacts a pair of antimony doped gold wires 18 and 19 which are secured to leads 10 and 13. Leads 10, 11, 12 and 13 are secured in a glass support 15 surrounded by a metallic structure 16. Alternating current is passed through the silicon body via leads 11 and 12 to heat the central thin portion so that wires 18 and 19 alloy with the silicon to form P-N junction rectifying contacts. The device then constitutes a tetrode transistor comprising emitter electrode 10, collector electrode 13 and two base electrodes 11 and 12. Alternatively, the lead to electrode 12 may be cut off to provide a triode transistor, or the device may be used as a diode. The semi-conductor may alternatively consist of N-type silicon or of germanium, and a gold-arsenic alloy may be used in place of the gold-antimony alloy for wires 18 and 19. During preparation the semi-conductor body may be etched in a mixture of nitric, hydrofluoric and glacial acetic acids.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB3115957A GB820252A (en) | 1957-10-04 | 1957-10-04 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB3115957A GB820252A (en) | 1957-10-04 | 1957-10-04 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB820252A true GB820252A (en) | 1959-09-16 |
Family
ID=10318902
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3115957A Expired GB820252A (en) | 1957-10-04 | 1957-10-04 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB820252A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1209213B (en) * | 1960-05-02 | 1966-01-20 | Westinghouse Electric Corp | Unipolar transistor with a disk-shaped semiconductor body and method of manufacturing |
| US10709479B2 (en) | 2008-09-29 | 2020-07-14 | DePuy Synthes Products, Inc. | Polyaxial bottom-loading screw and rod assembly |
| US10898234B2 (en) | 2007-07-20 | 2021-01-26 | DePuy Synthes Products, Inc. | Polyaxial bone fixation element |
| US11006978B2 (en) | 2009-06-17 | 2021-05-18 | DePuy Synthes Products, Inc. | Revision connector for spinal constructs |
| US11020152B2 (en) | 2009-04-15 | 2021-06-01 | DePuy Synthes Products, Inc. | Revision connector for spinal constructs |
| US11129648B2 (en) | 2008-09-12 | 2021-09-28 | DePuy Synthes Products, Inc. | Spinal stabilizing and guiding fixation system |
| US11484348B2 (en) | 2008-11-03 | 2022-11-01 | DePuy Synthes Products, Inc. | Uni-planer bone fixation assembly |
-
1957
- 1957-10-04 GB GB3115957A patent/GB820252A/en not_active Expired
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1209213B (en) * | 1960-05-02 | 1966-01-20 | Westinghouse Electric Corp | Unipolar transistor with a disk-shaped semiconductor body and method of manufacturing |
| US10898234B2 (en) | 2007-07-20 | 2021-01-26 | DePuy Synthes Products, Inc. | Polyaxial bone fixation element |
| US11357550B2 (en) | 2007-07-20 | 2022-06-14 | DePuy Synthes Products, Inc. | Polyaxial bone fixation element |
| US11819247B2 (en) | 2007-07-20 | 2023-11-21 | DePuy Synthes Products, Inc. | Polyaxial bone fixation element |
| US11998246B2 (en) | 2007-07-20 | 2024-06-04 | DePuy Synthes Products, Inc. | Polyaxial bone fixation element |
| US11129648B2 (en) | 2008-09-12 | 2021-09-28 | DePuy Synthes Products, Inc. | Spinal stabilizing and guiding fixation system |
| US11890037B2 (en) | 2008-09-12 | 2024-02-06 | DePuy Synthes Products, Inc. | Spinal stabilizing and guiding fixation system |
| US10709479B2 (en) | 2008-09-29 | 2020-07-14 | DePuy Synthes Products, Inc. | Polyaxial bottom-loading screw and rod assembly |
| US11484348B2 (en) | 2008-11-03 | 2022-11-01 | DePuy Synthes Products, Inc. | Uni-planer bone fixation assembly |
| US11020152B2 (en) | 2009-04-15 | 2021-06-01 | DePuy Synthes Products, Inc. | Revision connector for spinal constructs |
| US11006978B2 (en) | 2009-06-17 | 2021-05-18 | DePuy Synthes Products, Inc. | Revision connector for spinal constructs |
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