GB906036A - Improvements in or relating to semi-conductor devices - Google Patents

Improvements in or relating to semi-conductor devices

Info

Publication number
GB906036A
GB906036A GB3027859A GB3027859A GB906036A GB 906036 A GB906036 A GB 906036A GB 3027859 A GB3027859 A GB 3027859A GB 3027859 A GB3027859 A GB 3027859A GB 906036 A GB906036 A GB 906036A
Authority
GB
United Kingdom
Prior art keywords
emitter
zone
contact
emitter zone
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3027859A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Publication of GB906036A publication Critical patent/GB906036A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)

Abstract

906,036. Semi-conductor devices. SIEMENS & HALSKE A.G. Sept. 4, 1959 [Sept. 5, 1958], No. 30278/59. Class 37. A semi-conductor device having a forward biased PN junction between an emitter and base zone is so designed that the minority carrier concentration is effectively constant in a region extending into the emitter zone from the junction. A surface portion of the emitter zone is treated to reduce the recombination velocity and provided with one or more ohmic contacts covering only a small portion of the emitter zone surface. In one embodiment, in which the emitter zone is much thinner than the minority carrier diffusion length, the effectively constant concentration is produced by treating the entire surface of the emitter zone and using a small area central ohmic contact 9 (Fig. 2), several such contacts, or an annular contact. Another way of obtaining constancy of the minority carrier concentration in the emitter and hence of increasing its efficiency is to form the zone in two parts as shown in Fig. 3. The P-type part 2, which has a lower net impurity concentration than base zone 3 or P+ emitter part 6, is less than a diffusion length thick. Contact 4a to the emitter zone may be made in any of the ways mentioned above. An additional ohmic contact or contacts may also be provided to part 2 of the emitter zone. In operation, contact 4a or the additional contact(s) may be left floating or both connected in circuit.
GB3027859A 1958-09-05 1959-09-04 Improvements in or relating to semi-conductor devices Expired GB906036A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES59705A DE1090329B (en) 1958-09-05 1958-09-05 Semiconductor arrangement with at least one p-n junction operated in the forward direction, in particular transistor

Publications (1)

Publication Number Publication Date
GB906036A true GB906036A (en) 1962-09-19

Family

ID=7493517

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3027859A Expired GB906036A (en) 1958-09-05 1959-09-04 Improvements in or relating to semi-conductor devices

Country Status (5)

Country Link
CH (1) CH379641A (en)
DE (1) DE1090329B (en)
FR (1) FR1232137A (en)
GB (1) GB906036A (en)
NL (1) NL242787A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3456167A (en) * 1964-04-30 1969-07-15 Texas Instruments Inc Semiconductor optical radiation device
US4007474A (en) * 1972-12-29 1977-02-08 Sony Corporation Transistor having an emitter with a low impurity concentration portion and a high impurity concentration portion
US4010486A (en) * 1974-05-10 1977-03-01 Sony Corporation Sensing circuits
US4027324A (en) * 1972-12-29 1977-05-31 Sony Corporation Bidirectional transistor
US4032958A (en) * 1972-12-29 1977-06-28 Sony Corporation Semiconductor device
US4032953A (en) * 1974-05-10 1977-06-28 Sony Corporation Sensing circuits
US4032956A (en) * 1972-12-29 1977-06-28 Sony Corporation Transistor circuit
US4032957A (en) * 1972-12-29 1977-06-28 Sony Corporation Semiconductor device
US4040075A (en) * 1974-05-09 1977-08-02 Sony Corporation Frequency converter
US4040081A (en) * 1974-04-16 1977-08-02 Sony Corporation Alternating current control circuits
US4042944A (en) * 1974-05-07 1977-08-16 Sony Corporation Monostable multivibrator
GB2221091A (en) * 1988-07-22 1990-01-24 Gen Electric Co Plc Semiconductor planar doped barrier device

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5147584B2 (en) * 1972-12-29 1976-12-15
GB1503570A (en) * 1974-03-28 1978-03-15 Sony Corp Semiconductor devices
JPS5754969B2 (en) * 1974-04-04 1982-11-20
GB1502165A (en) * 1974-04-10 1978-02-22 Sony Corp Semiconductor devices
JPS5753672B2 (en) * 1974-04-10 1982-11-13
US4750025A (en) * 1981-12-04 1988-06-07 American Telephone And Telegraph Company, At&T Bell Laboratories Depletion stop transistor
FR2640813A1 (en) * 1988-12-16 1990-06-22 Radiotechnique Compelec INTEGRATED CIRCUIT HAVING A VERTICAL TRANSISTOR
FR2640814B1 (en) * 1988-12-16 1991-03-15 Radiotechnique Compelec INTEGRATED CIRCUIT HAVING A VERTICAL TRANSISTOR

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE489418A (en) * 1948-06-26
BE509110A (en) * 1951-05-05
NL96809C (en) * 1954-07-21
NL202409A (en) * 1954-11-30
NL103476C (en) * 1955-04-21

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3456167A (en) * 1964-04-30 1969-07-15 Texas Instruments Inc Semiconductor optical radiation device
US4007474A (en) * 1972-12-29 1977-02-08 Sony Corporation Transistor having an emitter with a low impurity concentration portion and a high impurity concentration portion
US4027324A (en) * 1972-12-29 1977-05-31 Sony Corporation Bidirectional transistor
US4032958A (en) * 1972-12-29 1977-06-28 Sony Corporation Semiconductor device
US4032956A (en) * 1972-12-29 1977-06-28 Sony Corporation Transistor circuit
US4032957A (en) * 1972-12-29 1977-06-28 Sony Corporation Semiconductor device
US4040081A (en) * 1974-04-16 1977-08-02 Sony Corporation Alternating current control circuits
US4042944A (en) * 1974-05-07 1977-08-16 Sony Corporation Monostable multivibrator
US4040075A (en) * 1974-05-09 1977-08-02 Sony Corporation Frequency converter
US4010486A (en) * 1974-05-10 1977-03-01 Sony Corporation Sensing circuits
US4032953A (en) * 1974-05-10 1977-06-28 Sony Corporation Sensing circuits
GB2221091A (en) * 1988-07-22 1990-01-24 Gen Electric Co Plc Semiconductor planar doped barrier device

Also Published As

Publication number Publication date
FR1232137A (en) 1960-10-05
DE1090329B (en) 1960-10-06
NL242787A (en)
CH379641A (en) 1964-07-15

Similar Documents

Publication Publication Date Title
GB906036A (en) Improvements in or relating to semi-conductor devices
GB921264A (en) Improvements in and relating to semiconductor devices
JPS5539619A (en) Thyristor
GB1153497A (en) Improvements in and relating to Semiconductor Devices
GB935710A (en) Improvements in controlled semiconductor rectifiers
GB1073551A (en) Integrated circuit comprising a diode and method of making the same
ES364658A1 (en) High speed switching rectifier
GB1303385A (en)
GB936165A (en) Improvements in or relating to electrical power sources
GB969592A (en) A semi-conductor device
JPS54140875A (en) Semiconductor device
ES421873A1 (en) Semiconductor devices
JPS5478092A (en) Lateral semiconductor device
JPS5473585A (en) Gate turn-off thyristor
ES280288A1 (en) P-nu junction transistor with increased resistance in current path across base surface
GB1007952A (en) Improvements in and relating to semi-conductor devices
MY107197A (en) Semiconductor integrating circuit.
GB1095047A (en) Semi-conductor devices and the manufacture thereof
GB1206480A (en) Making contact with a semiconductor device with emitter short-circuits
GB1106637A (en) Controllable semi-conductor device
JPS5617067A (en) Semiconductor switch
JPS5349965A (en) Complementary mis semiconductor device
GB985995A (en) A semiconductor arrangement
GB964431A (en) Improvements in or relating to transistors
GB985667A (en) A process for making a semiconductor device