GB1106637A - Controllable semi-conductor device - Google Patents

Controllable semi-conductor device

Info

Publication number
GB1106637A
GB1106637A GB18203/67A GB1820367A GB1106637A GB 1106637 A GB1106637 A GB 1106637A GB 18203/67 A GB18203/67 A GB 18203/67A GB 1820367 A GB1820367 A GB 1820367A GB 1106637 A GB1106637 A GB 1106637A
Authority
GB
United Kingdom
Prior art keywords
region
zone
pnpn
pnpp
april
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB18203/67A
Inventor
Edo Uard Eugster
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC Brown Boveri AG Switzerland
BBC Brown Boveri France SA
Original Assignee
Brown Boveri und Cie AG Switzerland
BBC Brown Boveri France SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Brown Boveri und Cie AG Switzerland, BBC Brown Boveri France SA filed Critical Brown Boveri und Cie AG Switzerland
Publication of GB1106637A publication Critical patent/GB1106637A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

1,106,637. Semi-conductor devices. BROWN. BOVERI & CO. Ltd. 20 April, 1967 [22 April, 1966], No. 18203/67. Heading H1K. A controlled rectifier consists of a PNP structure in which one of the outer P zones, 2, has a P + region 6 incorporated in one part of its surface, an N<SP>+</SP> region 4 in another part of the same surface, and a common electrode 7 linking these two regions. The resulting structure thus comprises a PNPN + device shunted by a PNPP<SP>+</SP> device. In the N region common to both devices the dopant concentration is non- uniform, such that the inner N zone II of the PNPP<SP>+</SP> device is more highly doped than the inner N zone I of the PNPN<SP>+</SP> device. This ensures that breakdown occurs in the former in preference to the latter device, and the Specification establishes with respect to I-V diagrams (Figs. 2 to 4, not shown) that this property enhances the performance as a controlled rectifier of the structure as a whole. The device is made by: taking an N-type circular wafer in which, by zone refining, the dopant concentration has been made greater in the centre than at the periphery; diffusing P zones 2 and 3 into opposite surfaces; and alloying a circular ohmic contact and a surrounding annular rectifying contact to make the P<SP>+</SP> and N<SP>+</SP> regions 6 and 4 respectively.
GB18203/67A 1966-04-22 1967-04-20 Controllable semi-conductor device Expired GB1106637A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH589466A CH436494A (en) 1966-04-22 1966-04-22 Controllable semiconductor valve

Publications (1)

Publication Number Publication Date
GB1106637A true GB1106637A (en) 1968-03-20

Family

ID=4301121

Family Applications (1)

Application Number Title Priority Date Filing Date
GB18203/67A Expired GB1106637A (en) 1966-04-22 1967-04-20 Controllable semi-conductor device

Country Status (6)

Country Link
US (1) US3432733A (en)
CH (1) CH436494A (en)
DE (2) DE1539644B1 (en)
GB (1) GB1106637A (en)
NL (1) NL154624B (en)
SE (1) SE325645B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2300754A1 (en) * 1973-01-08 1974-07-11 Siemens Ag THYRISTOR
FR2374742A1 (en) * 1976-12-20 1978-07-13 Radiotechnique Compelec MULTI-LAYER TRANSISTOR FOR HIGH VOLTAGES AND ITS MANUFACTURING PROCESS

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR84004E (en) * 1961-05-09 1964-11-13 Siemens Ag Semiconductor device
US3277352A (en) * 1963-03-14 1966-10-04 Itt Four layer semiconductor device
US3337783A (en) * 1964-01-16 1967-08-22 Westinghouse Electric Corp Shorted emitter controlled rectifier with improved turn-off gain
US3343048A (en) * 1964-02-20 1967-09-19 Westinghouse Electric Corp Four layer semiconductor switching devices having a shorted emitter and method of making the same
US3337782A (en) * 1964-04-01 1967-08-22 Westinghouse Electric Corp Semiconductor controlled rectifier having a shorted emitter at a plurality of points

Also Published As

Publication number Publication date
NL6702749A (en) 1967-10-23
DE1539644B1 (en) 1970-07-02
DE6607598U (en) 1971-03-25
SE325645B (en) 1970-07-06
US3432733A (en) 1969-03-11
CH436494A (en) 1967-05-31
NL154624B (en) 1977-09-15

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