GB1366967A - Bidirectional thyristor with ignition properties - Google Patents

Bidirectional thyristor with ignition properties

Info

Publication number
GB1366967A
GB1366967A GB5927072A GB5927072A GB1366967A GB 1366967 A GB1366967 A GB 1366967A GB 5927072 A GB5927072 A GB 5927072A GB 5927072 A GB5927072 A GB 5927072A GB 1366967 A GB1366967 A GB 1366967A
Authority
GB
United Kingdom
Prior art keywords
type
region
type region
emitter
contacts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5927072A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Transistor AG
Original Assignee
Transistor AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Transistor AG filed Critical Transistor AG
Publication of GB1366967A publication Critical patent/GB1366967A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs

Abstract

1366967 Semi-conductor devices TRANSISTOR AG 21 Dec 1972 [29 Dec 1971] 59270/72 Heading H1K At the upper surface 2 (Fig. 1a) of a bidirectional thyristor the N-type emitter region 9, together with an auxiliary strip 9<SP>1</SP> thereof, completely encloses an area 18 of the adjacent P-type region 7 containing a further isolated N- type region 11. The main electrode 13 contacts both the emitter region 9/9<SP>1</SP> and the P-type region 7 while the control electrode 14 contacts both the further N-type region 11 and the area 18 of the P type region 7. At the lower surface 3 (Fig. 1c) the N-type emitter region 12 includes a portion 12<SP>1</SP> whose outer periphery is of the same length and shape as the outer periphery of the auxiliary emitter strip 9<SP>1</SP> on the upper surface. The main electrode 15 contacts both the emitter region 12/12<SP>1</SP> and the adjacent P-type region 6. The various regions are arranged, as shown, symmetrically across a central plane S of the device. Preferably the parts of the P-type regions which are contacted are of relatively high conductivity. In the configuration shown the isolated N-type region 11 on the upper surface 2 is semicircular, there being an associated complementary semicircular P<SP>+</SP>-type zone 10. In a modification the region 11 is of half-ring shape, the P<SP>+</SP> zone then being shaped once more to complete a central circular area of the surface 2. Rectangular modifications of both these alternatives are also described.
GB5927072A 1971-12-29 1972-12-21 Bidirectional thyristor with ignition properties Expired GB1366967A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1916171A CH531793A (en) 1971-12-29 1971-12-29 Bidirectional thyristor

Publications (1)

Publication Number Publication Date
GB1366967A true GB1366967A (en) 1974-09-18

Family

ID=4437726

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5927072A Expired GB1366967A (en) 1971-12-29 1972-12-21 Bidirectional thyristor with ignition properties

Country Status (5)

Country Link
CH (1) CH531793A (en)
DE (1) DE2261819C2 (en)
FR (1) FR2169904B1 (en)
GB (1) GB1366967A (en)
IT (1) IT976419B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111463102A (en) * 2020-05-09 2020-07-28 北方夜视技术股份有限公司 Microchannel plate

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2351783C3 (en) * 1973-10-16 1982-02-11 Brown, Boveri & Cie Ag, 6800 Mannheim Two-way semiconductor switch (Triac)
US4216488A (en) * 1978-07-31 1980-08-05 Hutson Jearld L Lateral semiconductor diac
FR2585882B1 (en) * 1985-07-30 1988-06-24 Thomson Csf TRIAC DESENSITIZED AGAINST RISKS OF RESETTING ON SWITCHING ON REACTIVE LOAD

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH470084A (en) * 1967-02-22 1969-03-15 Mordovsky Ni Elektrotekhniches Symmetrical thyristor
DE1764821B1 (en) * 1967-08-25 1971-10-14 Mitsubishi Electric Corp TWO-DIRECTIONAL SWITCHABLE THYRISTOR
GB1301193A (en) * 1970-02-27 1972-12-29 Mullard Ltd Improvements in semiconductor devices

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111463102A (en) * 2020-05-09 2020-07-28 北方夜视技术股份有限公司 Microchannel plate
CN111463102B (en) * 2020-05-09 2023-03-31 北方夜视技术股份有限公司 Microchannel plate

Also Published As

Publication number Publication date
DE2261819A1 (en) 1973-07-05
IT976419B (en) 1974-08-20
FR2169904A1 (en) 1973-09-14
FR2169904B1 (en) 1976-08-27
CH531793A (en) 1972-12-15
DE2261819C2 (en) 1982-12-02

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee