GB1132112A - Transistor - Google Patents

Transistor

Info

Publication number
GB1132112A
GB1132112A GB4883665A GB4883665A GB1132112A GB 1132112 A GB1132112 A GB 1132112A GB 4883665 A GB4883665 A GB 4883665A GB 4883665 A GB4883665 A GB 4883665A GB 1132112 A GB1132112 A GB 1132112A
Authority
GB
United Kingdom
Prior art keywords
region
base
emitter region
nov
extending
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4883665A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Standard Electric Corp
Original Assignee
International Standard Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Standard Electric Corp filed Critical International Standard Electric Corp
Publication of GB1132112A publication Critical patent/GB1132112A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

1,132,112. Transistors. INTERNATIONAL STANDARD ELECTRIC CORP. 17 Nov., 1965 [23 Nov., 1964], No. 48836/65. Heading H1K. A transistor includes a body 11 of semiconductor material having a collector region 12, a base region 13 extending to one major surface of the body, and an emitter region 22, 23 also extending to the same surface at which it defines a closed figure which divides the surface of the base region 13 into a first portion surrounding the emitter region and a second portion surrounded by the emitter region, ohmic contacts 21, 19 to the collector region and the first portion of the base regionrespectively, and an ohmic contact 18 to the emitter region which also makes contact to the second portion of the base region.
GB4883665A 1964-11-23 1965-11-17 Transistor Expired GB1132112A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US41301264A 1964-11-23 1964-11-23

Publications (1)

Publication Number Publication Date
GB1132112A true GB1132112A (en) 1968-10-30

Family

ID=23635426

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4883665A Expired GB1132112A (en) 1964-11-23 1965-11-17 Transistor

Country Status (7)

Country Link
BE (1) BE672698A (en)
CH (1) CH453507A (en)
DE (1) DE1514062A1 (en)
ES (1) ES319940A1 (en)
FR (1) FR1454806A (en)
GB (1) GB1132112A (en)
NL (1) NL6515148A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2516396C3 (en) * 1975-04-15 1981-11-19 Philips Patentverwaltung Gmbh, 2000 Hamburg Semiconductor component with a diode
DE3225084A1 (en) * 1982-07-05 1984-01-05 Roman Efimovič Tomilino Moskovskaja oblast' Smoljanskij Bipolar transistor tetrode

Also Published As

Publication number Publication date
FR1454806A (en) 1966-10-07
DE1514062A1 (en) 1970-04-02
CH453507A (en) 1968-06-14
NL6515148A (en) 1966-05-24
ES319940A1 (en) 1966-05-01
BE672698A (en) 1966-05-23

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