GB1465737A - Thyristors - Google Patents
ThyristorsInfo
- Publication number
- GB1465737A GB1465737A GB3372574A GB3372574A GB1465737A GB 1465737 A GB1465737 A GB 1465737A GB 3372574 A GB3372574 A GB 3372574A GB 3372574 A GB3372574 A GB 3372574A GB 1465737 A GB1465737 A GB 1465737A
- Authority
- GB
- United Kingdom
- Prior art keywords
- zone
- emitter
- control electrode
- gap
- buffer zone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 239000012141 concentrate Substances 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1012—Base regions of thyristors
- H01L29/102—Cathode base regions of thyristors
Abstract
1465737 Semi-conductor devices SIEMENS AG 31 July 1974 [13 Sept 1973] 33725/74 Heading H1K A thyristor comprises a semi-conductor body having at least four zones of alternating conductivity type, of which a first, emitter zone 1 surrounds a control electrode 7 of a second, base zone 2 which extends to a surface of the body, and a buffer zone 8 in the surface of the body between the emitter zone 1 and the control electrode 7 and having at least one gap 10 therein so as to partially surround the control electrode 7, wherein the entire length of the PN junction between the emitter and base zones 1, 2 at the surface lies between the emitter and control electrodes 6, 7. The gap 10 is between 1-10 mm. long and the buffer zone 8 may be formed at the same time as the emitter zone 1 by diffusion. In an alternative embodiment, the control electrode 7 overlaps the buffer zone 8 at the inner boundary thereof. The buffer zone 8 causes control current to concentrate in the area of the gap 10 and hence facilitates rapid ignition.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19732346237 DE2346237A1 (en) | 1973-09-13 | 1973-09-13 | THYRISTOR |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1465737A true GB1465737A (en) | 1977-03-02 |
Family
ID=5892508
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3372574A Expired GB1465737A (en) | 1973-09-13 | 1974-07-31 | Thyristors |
Country Status (9)
| Country | Link |
|---|---|
| JP (1) | JPS5057585A (en) |
| BE (1) | BE817255A (en) |
| CA (1) | CA1012255A (en) |
| DE (1) | DE2346237A1 (en) |
| FR (1) | FR2244265A1 (en) |
| GB (1) | GB1465737A (en) |
| IT (1) | IT1021224B (en) |
| SE (1) | SE7411588L (en) |
| SU (1) | SU594904A3 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2538549C2 (en) * | 1975-08-29 | 1985-06-13 | Siemens AG, 1000 Berlin und 8000 München | Thyristor controllable with light |
| JPS54152477A (en) * | 1978-04-24 | 1979-11-30 | Gen Electric | Thyristor and method of forming same |
| DE102009045178A1 (en) * | 2009-09-30 | 2011-04-07 | Infineon Technologies Bipolar Gmbh & Co. Kg | Ignition stage thyristor with decoupled ignition stage |
-
1973
- 1973-09-13 DE DE19732346237 patent/DE2346237A1/en active Pending
-
1974
- 1974-07-04 BE BE146221A patent/BE817255A/en unknown
- 1974-07-31 GB GB3372574A patent/GB1465737A/en not_active Expired
- 1974-08-29 CA CA208,132A patent/CA1012255A/en not_active Expired
- 1974-09-09 FR FR7430440A patent/FR2244265A1/fr not_active Withdrawn
- 1974-09-10 IT IT27110/74A patent/IT1021224B/en active
- 1974-09-12 JP JP49105457A patent/JPS5057585A/ja active Pending
- 1974-09-13 SE SE7411588A patent/SE7411588L/xx unknown
- 1974-09-13 SU SU742059634A patent/SU594904A3/en active
Also Published As
| Publication number | Publication date |
|---|---|
| FR2244265A1 (en) | 1975-04-11 |
| CA1012255A (en) | 1977-06-14 |
| DE2346237A1 (en) | 1975-03-27 |
| SE7411588L (en) | 1975-03-14 |
| IT1021224B (en) | 1978-01-30 |
| JPS5057585A (en) | 1975-05-20 |
| SU594904A3 (en) | 1978-02-25 |
| BE817255A (en) | 1974-11-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |