GB1376480A - Thyristors - Google Patents

Thyristors

Info

Publication number
GB1376480A
GB1376480A GB5448472A GB5448472A GB1376480A GB 1376480 A GB1376480 A GB 1376480A GB 5448472 A GB5448472 A GB 5448472A GB 5448472 A GB5448472 A GB 5448472A GB 1376480 A GB1376480 A GB 1376480A
Authority
GB
United Kingdom
Prior art keywords
region
emitter
electrode
emitter region
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5448472A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1376480A publication Critical patent/GB1376480A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839—Cathode regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H01L29/102—Cathode base regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

1376480 Semi-conductor devices SIEMENS AG 24 Nov 1972 [3 March 1972] 54484/72 Heading H1K The emitter electrode 5 of a thyristor shorts the emitter region 1 to the base region 2 at a location adjacent a further region 11 of the same conductivity type as the emitter region 1, which region 11 is shorted to the base region 2 by the control electrode 6, and is located between the control electrode 6 and the emitter region 1. In the blocking direction the presence of the region 11 avoids destructive avalanche break-down of the emitter junction 8, while in the conducting direction it ensures that most of the firing current from electrode 6 passes through the emitter region 1 rather than passing directly to the emitter electrode 5. The invention is particularly useful in thyristors having a central relatively low resistivity zone 10 of the second base region 3. There may be a plurality of the regions 11 symmetrically disposed about the circular base electrode 6 and projecting into corresponding recesses in the inner periphery of the annular emitter region 1. The emitter region 1 may be an auxiliary emitter located within a larger annular main emitter region (22), Fig. 5 (not shown). In this case outward projections (18) of the auxiliary emitter region (1), corresponding to the regions (11), extend towards portions of the main emitter region (20) shorted to the base region (2).
GB5448472A 1972-03-03 1972-11-24 Thyristors Expired GB1376480A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722210386 DE2210386A1 (en) 1972-03-03 1972-03-03 THYRISTOR

Publications (1)

Publication Number Publication Date
GB1376480A true GB1376480A (en) 1974-12-04

Family

ID=5837869

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5448472A Expired GB1376480A (en) 1972-03-03 1972-11-24 Thyristors

Country Status (10)

Country Link
JP (1) JPS48104477A (en)
AT (1) AT318077B (en)
CA (1) CA981805A (en)
CH (1) CH551692A (en)
DE (1) DE2210386A1 (en)
FR (1) FR2173913B1 (en)
GB (1) GB1376480A (en)
IT (1) IT979520B (en)
NL (1) NL7302892A (en)
SE (1) SE382284B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2329872C3 (en) * 1973-06-12 1979-04-26 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thyristor
JPS5081691A (en) * 1973-11-21 1975-07-02
JPS51142983A (en) * 1975-06-04 1976-12-08 Hitachi Ltd Scr
ZA775629B (en) * 1976-10-29 1978-08-30 Westinghouse Electric Corp An improvement in or relating to thyristor fired by collapsing voltage
DE2843960A1 (en) * 1978-10-09 1980-04-10 Licentia Gmbh STOEROTENTIAL COMPENSATED THYRISTOR WITH AT LEAST FOUR ZONES OF DIFFERENT CONDUCTIVITY TYPES
JPS5958866A (en) * 1982-09-28 1984-04-04 Mitsubishi Electric Corp Thyristor

Also Published As

Publication number Publication date
NL7302892A (en) 1973-09-06
IT979520B (en) 1974-09-30
FR2173913B1 (en) 1977-12-30
FR2173913A1 (en) 1973-10-12
SE382284B (en) 1976-01-19
JPS48104477A (en) 1973-12-27
AT318077B (en) 1974-09-25
DE2210386A1 (en) 1973-09-06
CH551692A (en) 1974-07-15
CA981805A (en) 1976-01-13

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee