GB1366845A - Integrated thyristor semiconductor arrangements - Google Patents
Integrated thyristor semiconductor arrangementsInfo
- Publication number
- GB1366845A GB1366845A GB1346173A GB1346173A GB1366845A GB 1366845 A GB1366845 A GB 1366845A GB 1346173 A GB1346173 A GB 1346173A GB 1346173 A GB1346173 A GB 1346173A GB 1366845 A GB1366845 A GB 1366845A
- Authority
- GB
- United Kingdom
- Prior art keywords
- thyristor
- zone
- diode
- cathode
- anode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 230000000903 blocking effect Effects 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 230000006798 recombination Effects 0.000 abstract 1
- 238000005215 recombination Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
- H01L29/7416—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode the device being an antiparallel diode, e.g. RCT
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Thyristors (AREA)
Abstract
1366845 Thyristors SIEMENS AG 21 March 1973 [23 March 1972] 13461/73 Heading H1K A thyristor (Figs. 1, 2) has a square semiconductor body within which a first cathode zone 1 of, e.g. N-type Si of annular shape has a central aperture containing an ignition electrode 6 electrically connected to a P-type base zone 2. A further P-type zone 7 extending to the boundaries of the square defines the anode of an antiparallel connected diode. A third zone 3 underlying zone 2 forms an N-type base zone of the transistor, and under this is a fourth P-type anode zone 4, surrounded by an edge N-type zone 8 forming the diode cathodes Electrodes 5 and 9 are applied to the thyristor cathode 1 and anode 4, and are electrically connected to P-type base 2 and N-type base 3, and to diode anode 7 and cathode 8 respectively. For negative potential on electrode 5 and positive on electrode 9, the integrated diode is blocked and positive potential on electrode 6 fires the thyristor, while with positive potential on electrode 5 and negative on electrode 9 the diode conducts a reverse current, so that for control of oscillating current the thyristor fires during positive halfwave and the negative halfwave traverses the diode. The anode of the latter is spaced a distance d (= at least 2 diffusion lengths) from the thyristor cathode and its cathode is similarly spaced from the thyristor anode so that stored charge carries are eliminated by recombination to discourage unintended ignition. In a modification (Fig. 3, not shown) the lower zone of the thyristor extends over the whole width of the s/c body and the diode has four layers incorporating the P, N, and P layers of the thyristor and the cathode N-zone 8; so that it conducts on a trigger voltage not exceeding the highest allowable thyristor blocking voltage. A five layer diode may be used, alternatively, with a trigger voltage which drops on triggering to the Zener voltage of one of the outer PN junctions. The zone sequence of the thyristor may equally be PN PN with reversal of the diode anode and cathode. The zones may be doped by the usual masking and diffusion, and the thyristor is surrounded by the diode on all sides.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19722214187 DE2214187C3 (en) | 1972-03-23 | 1972-03-23 | Thyristor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1366845A true GB1366845A (en) | 1974-09-11 |
Family
ID=5839935
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1346173A Expired GB1366845A (en) | 1972-03-23 | 1973-03-21 | Integrated thyristor semiconductor arrangements |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS498185A (en) |
| CH (1) | CH548113A (en) |
| DE (1) | DE2214187C3 (en) |
| FR (1) | FR2177045B1 (en) |
| GB (1) | GB1366845A (en) |
| IT (1) | IT981550B (en) |
| NL (1) | NL7301561A (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55282B2 (en) * | 1973-08-22 | 1980-01-07 | ||
| FR2270676B1 (en) * | 1974-02-22 | 1976-12-03 | Thomson Csf | |
| JPS50159276A (en) * | 1974-06-11 | 1975-12-23 | ||
| JPS52127596A (en) * | 1976-04-16 | 1977-10-26 | Hitachi Ltd | Storing equipment |
| JPS52146570A (en) * | 1976-05-31 | 1977-12-06 | Toshiba Corp | Reverse conducting thyristor |
| CH594989A5 (en) * | 1976-09-03 | 1978-01-31 | Bbc Brown Boveri & Cie | |
| JPS5933272B2 (en) * | 1978-06-19 | 1984-08-14 | 株式会社日立製作所 | semiconductor equipment |
| JPS5589339U (en) * | 1978-12-15 | 1980-06-20 | ||
| DE19648041B4 (en) * | 1996-11-20 | 2010-07-15 | Robert Bosch Gmbh | Integrated vertical semiconductor device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA845885A (en) * | 1967-08-21 | 1970-06-30 | E. Burke Donald | Semiconductor switching device |
| US3584270A (en) * | 1968-03-13 | 1971-06-08 | Westinghouse Electric Corp | High speed switching rectifier |
-
1972
- 1972-03-23 DE DE19722214187 patent/DE2214187C3/en not_active Expired
-
1973
- 1973-02-02 NL NL7301561A patent/NL7301561A/xx unknown
- 1973-02-20 CH CH242273A patent/CH548113A/en not_active IP Right Cessation
- 1973-03-20 JP JP3258073A patent/JPS498185A/ja active Pending
- 1973-03-21 GB GB1346173A patent/GB1366845A/en not_active Expired
- 1973-03-22 IT IT2195873A patent/IT981550B/en active
- 1973-03-22 FR FR7310306A patent/FR2177045B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2214187B2 (en) | 1977-09-01 |
| DE2214187A1 (en) | 1973-09-27 |
| DE2214187C3 (en) | 1978-05-03 |
| IT981550B (en) | 1974-10-10 |
| FR2177045A1 (en) | 1973-11-02 |
| NL7301561A (en) | 1973-09-25 |
| FR2177045B1 (en) | 1977-12-30 |
| CH548113A (en) | 1974-04-11 |
| JPS498185A (en) | 1974-01-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |