GB1240510A - Improved thyristor - Google Patents
Improved thyristorInfo
- Publication number
- GB1240510A GB1240510A GB6098268A GB6098268A GB1240510A GB 1240510 A GB1240510 A GB 1240510A GB 6098268 A GB6098268 A GB 6098268A GB 6098268 A GB6098268 A GB 6098268A GB 1240510 A GB1240510 A GB 1240510A
- Authority
- GB
- United Kingdom
- Prior art keywords
- ignition
- emitter
- base
- base layer
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 2
- 239000010931 gold Substances 0.000 abstract 2
- 229910052737 gold Inorganic materials 0.000 abstract 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 229910001245 Sb alloy Inorganic materials 0.000 abstract 1
- KAPYVWKEUSXLKC-UHFFFAOYSA-N [Sb].[Au] Chemical compound [Sb].[Au] KAPYVWKEUSXLKC-UHFFFAOYSA-N 0.000 abstract 1
- 238000005275 alloying Methods 0.000 abstract 1
- 239000002140 antimony alloy Substances 0.000 abstract 1
- 230000000903 blocking effect Effects 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
- H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Thyristors (AREA)
Abstract
1,240,510. Semi-conductor devices. ALLMANNA SVENSKA ELEKTRISKA A.B. 23 Dec., 1968 [28 Dec., 1967], No. 60982/68, Heading H1K. In a thyristor having four layers of alternately opposite conductivity types, the two outer, or emitter layers 2, 5, have a comparatively low resistivity and the two inner, or base layers 3, 4, have a comparatively high resistivity. The base layer 4 is much thinner in the region around the ignition electrode 10 than elsewhere, this being achieved by providing it with a depression 4<SP>1</SP> in the ignition area which is substantially circular. The emitter 5 is arranged to have an opening in this area, allowing direct contact to the base layer 4, the opening being of smaller diameter than the depression so that the emitter 5 contacts the bottom of the depression. As the distance between the emitter 5 and base 3 is small here ignition is rapid. The relatively thick base layer 4 outside the ignition region, contacted by contacts 15, 15<SP>1</SP> protects against dV/dt ignition, the capacitor 16 providing a low resistivity current path across the emitter junction at steeply increasing forward blocking voltages while electrode 10 is negatively biased. n-Type silicon is used as the basic material for the thyristor, diffusion with gallium providing the p-type regions, the nemitter layer 5 being formed by alloying a gold antimony alloy to the surface of base region 4. A further embodiment is described, Fig. 2, not shown, of a similar device operated by light, in which the ignition electrode is absent, and replaced in its function by a diode lamp. As an alternative to reducing the thickness of the base layer 4 in the ignition region, gold can be diffused into the surface of the device in such a quantity as to reduce the minority carrier lifetime everywhere except in the ignition area, a phosphorus layer having been provided here to provide a "getter" preventing the gold from having effect.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE1788767A SE352779B (en) | 1967-12-28 | 1967-12-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1240510A true GB1240510A (en) | 1971-07-28 |
Family
ID=20304079
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB6098268A Expired GB1240510A (en) | 1967-12-28 | 1968-12-23 | Improved thyristor |
Country Status (6)
| Country | Link |
|---|---|
| CH (1) | CH486776A (en) |
| DE (1) | DE1816009C3 (en) |
| FR (1) | FR1599432A (en) |
| GB (1) | GB1240510A (en) |
| NL (1) | NL6818198A (en) |
| SE (1) | SE352779B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4060826A (en) * | 1975-08-29 | 1977-11-29 | Siemens Aktiengesellschaft | Light activated thyristor capable of activation by intensity radiation |
| US4122480A (en) * | 1975-11-05 | 1978-10-24 | Licentia Patent-Verwaltungs-G.M.B.H. | Light fired thyristor with faulty firing protection |
| CN101672887A (en) * | 2008-09-12 | 2010-03-17 | 上海宝冶建设有限公司 | Preventive detection method for performance of variable flow assembly of high-power thyristor |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2237086C3 (en) * | 1972-07-28 | 1979-01-18 | Semikron Gesellschaft Fuer Gleichrichterbau Und Elektronik Mbh, 8500 Nuernberg | Controllable semiconductor rectifier component |
| DE2537984C3 (en) * | 1975-08-26 | 1981-07-16 | Siemens AG, 1000 Berlin und 8000 München | Thyristor |
-
1967
- 1967-12-28 SE SE1788767A patent/SE352779B/xx unknown
-
1968
- 1968-12-18 NL NL6818198A patent/NL6818198A/xx unknown
- 1968-12-20 CH CH1949668A patent/CH486776A/en not_active IP Right Cessation
- 1968-12-20 DE DE19681816009 patent/DE1816009C3/en not_active Expired
- 1968-12-23 GB GB6098268A patent/GB1240510A/en not_active Expired
- 1968-12-24 FR FR1599432D patent/FR1599432A/fr not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4060826A (en) * | 1975-08-29 | 1977-11-29 | Siemens Aktiengesellschaft | Light activated thyristor capable of activation by intensity radiation |
| US4122480A (en) * | 1975-11-05 | 1978-10-24 | Licentia Patent-Verwaltungs-G.M.B.H. | Light fired thyristor with faulty firing protection |
| CN101672887A (en) * | 2008-09-12 | 2010-03-17 | 上海宝冶建设有限公司 | Preventive detection method for performance of variable flow assembly of high-power thyristor |
Also Published As
| Publication number | Publication date |
|---|---|
| SE352779B (en) | 1973-01-08 |
| DE1816009B2 (en) | 1976-01-08 |
| CH486776A (en) | 1970-02-28 |
| DE1816009C3 (en) | 1979-06-28 |
| NL6818198A (en) | 1969-07-01 |
| DE1816009A1 (en) | 1969-12-04 |
| FR1599432A (en) | 1970-07-15 |
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