JPS48104477A - - Google Patents
Info
- Publication number
- JPS48104477A JPS48104477A JP2563773A JP2563773A JPS48104477A JP S48104477 A JPS48104477 A JP S48104477A JP 2563773 A JP2563773 A JP 2563773A JP 2563773 A JP2563773 A JP 2563773A JP S48104477 A JPS48104477 A JP S48104477A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0839—Cathode regions of thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1012—Base regions of thyristors
- H01L29/102—Cathode base regions of thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19722210386 DE2210386A1 (de) | 1972-03-03 | 1972-03-03 | Thyristor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS48104477A true JPS48104477A (ja) | 1973-12-27 |
Family
ID=5837869
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2563773A Pending JPS48104477A (ja) | 1972-03-03 | 1973-03-02 |
Country Status (10)
| Country | Link |
|---|---|
| JP (1) | JPS48104477A (ja) |
| AT (1) | AT318077B (ja) |
| CA (1) | CA981805A (ja) |
| CH (1) | CH551692A (ja) |
| DE (1) | DE2210386A1 (ja) |
| FR (1) | FR2173913B1 (ja) |
| GB (1) | GB1376480A (ja) |
| IT (1) | IT979520B (ja) |
| NL (1) | NL7302892A (ja) |
| SE (1) | SE382284B (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5036084A (ja) * | 1973-06-12 | 1975-04-04 |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5081691A (ja) * | 1973-11-21 | 1975-07-02 | ||
| JPS51142983A (en) * | 1975-06-04 | 1976-12-08 | Hitachi Ltd | Scr |
| ZA775629B (en) * | 1976-10-29 | 1978-08-30 | Westinghouse Electric Corp | An improvement in or relating to thyristor fired by collapsing voltage |
| DE2843960A1 (de) * | 1978-10-09 | 1980-04-10 | Licentia Gmbh | Stoerotentialkompensierter thyristor mit mindestens vier zonen unterschiedlichen leitfaehigkeittyps |
| JPS5958866A (ja) * | 1982-09-28 | 1984-04-04 | Mitsubishi Electric Corp | サイリスタ |
-
1972
- 1972-03-03 DE DE19722210386 patent/DE2210386A1/de active Pending
- 1972-11-23 CH CH1708972A patent/CH551692A/xx not_active IP Right Cessation
- 1972-11-24 GB GB5448472A patent/GB1376480A/en not_active Expired
- 1972-11-27 AT AT1008372A patent/AT318077B/de active
- 1972-12-19 FR FR7245193A patent/FR2173913B1/fr not_active Expired
-
1973
- 1973-02-27 IT IT2091173A patent/IT979520B/it active
- 1973-03-01 NL NL7302892A patent/NL7302892A/xx not_active Application Discontinuation
- 1973-03-02 JP JP2563773A patent/JPS48104477A/ja active Pending
- 1973-03-02 CA CA165,068A patent/CA981805A/en not_active Expired
- 1973-03-05 SE SE7303070A patent/SE382284B/xx unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5036084A (ja) * | 1973-06-12 | 1975-04-04 | ||
| JPS587068B2 (ja) * | 1973-06-12 | 1983-02-08 | シ−メンス アクチエンゲゼルシヤフト | サイリスタ |
Also Published As
| Publication number | Publication date |
|---|---|
| GB1376480A (en) | 1974-12-04 |
| FR2173913B1 (ja) | 1977-12-30 |
| IT979520B (it) | 1974-09-30 |
| NL7302892A (ja) | 1973-09-06 |
| CH551692A (de) | 1974-07-15 |
| FR2173913A1 (ja) | 1973-10-12 |
| AT318077B (de) | 1974-09-25 |
| SE382284B (sv) | 1976-01-19 |
| DE2210386A1 (de) | 1973-09-06 |
| CA981805A (en) | 1976-01-13 |