CH551692A - Thyristor. - Google Patents

Thyristor.

Info

Publication number
CH551692A
CH551692A CH1708972A CH1708972A CH551692A CH 551692 A CH551692 A CH 551692A CH 1708972 A CH1708972 A CH 1708972A CH 1708972 A CH1708972 A CH 1708972A CH 551692 A CH551692 A CH 551692A
Authority
CH
Switzerland
Prior art keywords
thyristor
Prior art date
Application number
CH1708972A
Other languages
German (de)
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH551692A publication Critical patent/CH551692A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839—Cathode regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H01L29/102—Cathode base regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
CH1708972A 1972-03-03 1972-11-23 Thyristor. CH551692A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722210386 DE2210386A1 (de) 1972-03-03 1972-03-03 Thyristor

Publications (1)

Publication Number Publication Date
CH551692A true CH551692A (de) 1974-07-15

Family

ID=5837869

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1708972A CH551692A (de) 1972-03-03 1972-11-23 Thyristor.

Country Status (10)

Country Link
JP (1) JPS48104477A (xx)
AT (1) AT318077B (xx)
CA (1) CA981805A (xx)
CH (1) CH551692A (xx)
DE (1) DE2210386A1 (xx)
FR (1) FR2173913B1 (xx)
GB (1) GB1376480A (xx)
IT (1) IT979520B (xx)
NL (1) NL7302892A (xx)
SE (1) SE382284B (xx)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2329872C3 (de) * 1973-06-12 1979-04-26 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thyristor
JPS5081691A (xx) * 1973-11-21 1975-07-02
JPS51142983A (en) * 1975-06-04 1976-12-08 Hitachi Ltd Scr
ZA775629B (en) * 1976-10-29 1978-08-30 Westinghouse Electric Corp An improvement in or relating to thyristor fired by collapsing voltage
DE2843960A1 (de) * 1978-10-09 1980-04-10 Licentia Gmbh Stoerotentialkompensierter thyristor mit mindestens vier zonen unterschiedlichen leitfaehigkeittyps
JPS5958866A (ja) * 1982-09-28 1984-04-04 Mitsubishi Electric Corp サイリスタ

Also Published As

Publication number Publication date
GB1376480A (en) 1974-12-04
JPS48104477A (xx) 1973-12-27
NL7302892A (xx) 1973-09-06
SE382284B (sv) 1976-01-19
CA981805A (en) 1976-01-13
IT979520B (it) 1974-09-30
FR2173913A1 (xx) 1973-10-12
FR2173913B1 (xx) 1977-12-30
AT318077B (de) 1974-09-25
DE2210386A1 (de) 1973-09-06

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Legal Events

Date Code Title Description
PL Patent ceased
PL Patent ceased