NL7302892A - - Google Patents

Info

Publication number
NL7302892A
NL7302892A NL7302892A NL7302892A NL7302892A NL 7302892 A NL7302892 A NL 7302892A NL 7302892 A NL7302892 A NL 7302892A NL 7302892 A NL7302892 A NL 7302892A NL 7302892 A NL7302892 A NL 7302892A
Authority
NL
Netherlands
Application number
NL7302892A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7302892A publication Critical patent/NL7302892A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839Cathode regions of thyristors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012Base regions of thyristors
    • H01L29/102Cathode base regions of thyristors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
NL7302892A 1972-03-03 1973-03-01 NL7302892A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722210386 DE2210386A1 (en) 1972-03-03 1972-03-03 THYRISTOR

Publications (1)

Publication Number Publication Date
NL7302892A true NL7302892A (en) 1973-09-06

Family

ID=5837869

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7302892A NL7302892A (en) 1972-03-03 1973-03-01

Country Status (10)

Country Link
JP (1) JPS48104477A (en)
AT (1) AT318077B (en)
CA (1) CA981805A (en)
CH (1) CH551692A (en)
DE (1) DE2210386A1 (en)
FR (1) FR2173913B1 (en)
GB (1) GB1376480A (en)
IT (1) IT979520B (en)
NL (1) NL7302892A (en)
SE (1) SE382284B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2329872C3 (en) * 1973-06-12 1979-04-26 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thyristor
JPS5081691A (en) * 1973-11-21 1975-07-02
JPS51142983A (en) * 1975-06-04 1976-12-08 Hitachi Ltd Scr
ZA775629B (en) * 1976-10-29 1978-08-30 Westinghouse Electric Corp An improvement in or relating to thyristor fired by collapsing voltage
DE2843960A1 (en) * 1978-10-09 1980-04-10 Licentia Gmbh STOEROTENTIAL COMPENSATED THYRISTOR WITH AT LEAST FOUR ZONES OF DIFFERENT CONDUCTIVITY TYPES
JPS5958866A (en) * 1982-09-28 1984-04-04 Mitsubishi Electric Corp Thyristor

Also Published As

Publication number Publication date
SE382284B (en) 1976-01-19
FR2173913B1 (en) 1977-12-30
IT979520B (en) 1974-09-30
DE2210386A1 (en) 1973-09-06
JPS48104477A (en) 1973-12-27
CA981805A (en) 1976-01-13
GB1376480A (en) 1974-12-04
FR2173913A1 (en) 1973-10-12
AT318077B (en) 1974-09-25
CH551692A (en) 1974-07-15

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Legal Events

Date Code Title Description
BV The patent application has lapsed