GB1094336A - Thyristors - Google Patents

Thyristors

Info

Publication number
GB1094336A
GB1094336A GB1584265A GB1584265A GB1094336A GB 1094336 A GB1094336 A GB 1094336A GB 1584265 A GB1584265 A GB 1584265A GB 1584265 A GB1584265 A GB 1584265A GB 1094336 A GB1094336 A GB 1094336A
Authority
GB
United Kingdom
Prior art keywords
zones
zone
bounding
junctions
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1584265A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Publication of GB1094336A publication Critical patent/GB1094336A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

1,094,336. Thyristors. SIEMENS-SCHUCKERTWERKE A.G. April 13, 1965 [April 29, 1964], No. 15842/65. Heading H1K. A thyristor consists of a PNPN structure with terminal electrodes 6, 5, to the outer P and Z zones 2, 4 and a control electrode 8 to one of the inner zones 3. The latter electrode is separated from the body of the semi-conductor by an insulating layer 7 and it covers at least part of the surface of the associated zone, extending over its whole length from one of its bounding PN junctions to the other. Fig. 1 depicts a switching circuit employing the outer N and P zones as emitter and collector respectively and with the inner N zone connected to the control electrode by way of the insulator. Both the insulator and the electrode plate overlying it extend somewhat beyond the bounding PN junctions of this zone. Fig. 2 (not shown) depicts a trapezoidal body, originally weakly N type, whose opposed plane surfaces have been made P type by diffusion and one of the P-zones subsequently provided with an N type fourth layer by alloying. The slant edges of the trapezoid have been oxidized and a control electrode, extending somewhat beyond the bounding junctions of the inner N zone, has been applied over it. The invention may also be applied to a planar device.
GB1584265A 1964-04-29 1965-04-13 Thyristors Expired GB1094336A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0090833 1964-04-29

Publications (1)

Publication Number Publication Date
GB1094336A true GB1094336A (en) 1967-12-06

Family

ID=7516107

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1584265A Expired GB1094336A (en) 1964-04-29 1965-04-13 Thyristors

Country Status (8)

Country Link
AT (1) AT249174B (en)
BE (1) BE662714A (en)
CH (1) CH437537A (en)
DE (1) DE1439368A1 (en)
FR (1) FR1433766A (en)
GB (1) GB1094336A (en)
NL (1) NL6505357A (en)
SE (1) SE306578B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3831187A (en) * 1973-04-11 1974-08-20 Rca Corp Thyristor having capacitively coupled control electrode
US4400711A (en) * 1981-03-31 1983-08-23 Rca Corporation Integrated circuit protection device
US4595941A (en) * 1980-12-03 1986-06-17 Rca Corporation Protection circuit for integrated circuit devices

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2835089A1 (en) * 1978-08-10 1980-03-20 Siemens Ag THYRISTOR
US4611235A (en) * 1984-06-04 1986-09-09 General Motors Corporation Thyristor with turn-off FET
DE10107142A1 (en) * 2001-02-15 2002-11-14 Infineon Technologies Ag Production of a chip-like semiconductor component used as a FET chip comprises using chip side edges for contacting an electrode of the component

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3831187A (en) * 1973-04-11 1974-08-20 Rca Corp Thyristor having capacitively coupled control electrode
US4595941A (en) * 1980-12-03 1986-06-17 Rca Corporation Protection circuit for integrated circuit devices
US4400711A (en) * 1981-03-31 1983-08-23 Rca Corporation Integrated circuit protection device

Also Published As

Publication number Publication date
AT249174B (en) 1966-09-12
FR1433766A (en) 1966-04-01
SE306578B (en) 1968-12-02
BE662714A (en) 1965-08-17
NL6505357A (en) 1965-11-01
CH437537A (en) 1967-06-15
DE1439368A1 (en) 1969-02-13

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