GB1094336A - Thyristors - Google Patents
ThyristorsInfo
- Publication number
- GB1094336A GB1094336A GB1584265A GB1584265A GB1094336A GB 1094336 A GB1094336 A GB 1094336A GB 1584265 A GB1584265 A GB 1584265A GB 1584265 A GB1584265 A GB 1584265A GB 1094336 A GB1094336 A GB 1094336A
- Authority
- GB
- United Kingdom
- Prior art keywords
- zones
- zone
- bounding
- junctions
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000012212 insulator Substances 0.000 abstract 2
- 238000005275 alloying Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
1,094,336. Thyristors. SIEMENS-SCHUCKERTWERKE A.G. April 13, 1965 [April 29, 1964], No. 15842/65. Heading H1K. A thyristor consists of a PNPN structure with terminal electrodes 6, 5, to the outer P and Z zones 2, 4 and a control electrode 8 to one of the inner zones 3. The latter electrode is separated from the body of the semi-conductor by an insulating layer 7 and it covers at least part of the surface of the associated zone, extending over its whole length from one of its bounding PN junctions to the other. Fig. 1 depicts a switching circuit employing the outer N and P zones as emitter and collector respectively and with the inner N zone connected to the control electrode by way of the insulator. Both the insulator and the electrode plate overlying it extend somewhat beyond the bounding PN junctions of this zone. Fig. 2 (not shown) depicts a trapezoidal body, originally weakly N type, whose opposed plane surfaces have been made P type by diffusion and one of the P-zones subsequently provided with an N type fourth layer by alloying. The slant edges of the trapezoid have been oxidized and a control electrode, extending somewhat beyond the bounding junctions of the inner N zone, has been applied over it. The invention may also be applied to a planar device.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES0090833 | 1964-04-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1094336A true GB1094336A (en) | 1967-12-06 |
Family
ID=7516107
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1584265A Expired GB1094336A (en) | 1964-04-29 | 1965-04-13 | Thyristors |
Country Status (8)
Country | Link |
---|---|
AT (1) | AT249174B (en) |
BE (1) | BE662714A (en) |
CH (1) | CH437537A (en) |
DE (1) | DE1439368A1 (en) |
FR (1) | FR1433766A (en) |
GB (1) | GB1094336A (en) |
NL (1) | NL6505357A (en) |
SE (1) | SE306578B (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3831187A (en) * | 1973-04-11 | 1974-08-20 | Rca Corp | Thyristor having capacitively coupled control electrode |
US4400711A (en) * | 1981-03-31 | 1983-08-23 | Rca Corporation | Integrated circuit protection device |
US4595941A (en) * | 1980-12-03 | 1986-06-17 | Rca Corporation | Protection circuit for integrated circuit devices |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2835089A1 (en) * | 1978-08-10 | 1980-03-20 | Siemens Ag | THYRISTOR |
US4611235A (en) * | 1984-06-04 | 1986-09-09 | General Motors Corporation | Thyristor with turn-off FET |
DE10107142A1 (en) * | 2001-02-15 | 2002-11-14 | Infineon Technologies Ag | Production of a chip-like semiconductor component used as a FET chip comprises using chip side edges for contacting an electrode of the component |
-
1964
- 1964-04-29 DE DE19641439368 patent/DE1439368A1/en active Pending
-
1965
- 1965-03-30 AT AT287665A patent/AT249174B/en active
- 1965-03-30 CH CH433165A patent/CH437537A/en unknown
- 1965-04-13 GB GB1584265A patent/GB1094336A/en not_active Expired
- 1965-04-20 BE BE662714D patent/BE662714A/xx unknown
- 1965-04-27 NL NL6505357A patent/NL6505357A/xx unknown
- 1965-04-28 SE SE558365A patent/SE306578B/xx unknown
- 1965-04-28 FR FR15036A patent/FR1433766A/en not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3831187A (en) * | 1973-04-11 | 1974-08-20 | Rca Corp | Thyristor having capacitively coupled control electrode |
US4595941A (en) * | 1980-12-03 | 1986-06-17 | Rca Corporation | Protection circuit for integrated circuit devices |
US4400711A (en) * | 1981-03-31 | 1983-08-23 | Rca Corporation | Integrated circuit protection device |
Also Published As
Publication number | Publication date |
---|---|
AT249174B (en) | 1966-09-12 |
FR1433766A (en) | 1966-04-01 |
SE306578B (en) | 1968-12-02 |
BE662714A (en) | 1965-08-17 |
NL6505357A (en) | 1965-11-01 |
CH437537A (en) | 1967-06-15 |
DE1439368A1 (en) | 1969-02-13 |
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